| LH231G
Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235 
Contextual Info: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant  mA  MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200
 | OCR Scan
 | 28DIP
28DIP 
LH2389D
LH23128D
LH23286D
LH236120
LH2310006D
LH231G
lh5348
LH538b
LH2326
lh5s4
LHMN5
lh5359
lh5348xx
lh537
LH235 | PDF | 
| 48 tsop flash pinout
Abstract: LH23512 
Contextual Info: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns  55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)
 | OCR Scan
 | LH2369 
LH23126 
LH23255
LH53259 
LH23512
LH53517 
LH53H0900 
LH531VOO 
LH530800A 
LH530800A-Y 
48 tsop flash pinout | PDF | 
| LH2369
Abstract: sharp mask rom 
Contextual Info: NMOS 64K  8K x 8  Mask Programmable ROM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH2369 is a mask programmable ROM organ ized as 8,192 x 8 bits. It is fabricated using silicon-gate NMOS process technology. • Access time: 200 ns (MAX.) •
 | OCR Scan
 | LH2369
28-pin,
600-mil
28-PIN
LH2369 
DIP28-P-600)
LH2369D-20 
sharp mask rom | PDF | 
| lh57257
Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02 
Contextual Info: Index  Model No.  ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429
 | OCR Scan
 | IR2E201
IR2E24
IR2E27/A
IR2E28
IR2E29
IR2E30
IR2E31/A
IR2E32N9
IR2E34
IR2E41
lh57257
IR2E31
IR2E01
IR2C07
IR2E27
IR2E19
IR2E31A
IR3n06
IR2E02 | PDF |