CR10
Abstract: 4047N
Contextual Info: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)
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m30l0t8000t0m30l0t8000b052mhzlfbga88+2cr104047n
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7900f-d
Contextual Info: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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m36llr8860t1m36llr8860d1m36llr8860m1m36llr8860b1+3880dh880eh7900f-d
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A0-A21
Abstract: J-STD-020B M30W0R6500T0 LFBGA88 AI08599
Contextual Info: M30W0R6500T0 96 Mbit 64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories 1.8V Supply, Multi-Chip Package FEATURES SUMMARY • ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Flash Memory SUPPLY VOLTAGE
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m30w0r6500t08810h8814h54mhz+4a0-a21j-std-020blfbga88ai08599
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M30LW128D
Abstract: M58LW064D TSOP56
Contextual Info: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■
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m30lw128d64mbitx8/x16m58lw064d+4tsop56110ns110/25nskword/128kbyte
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M30L0R8000T
Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36LLR8860D1
Contextual Info: M36LLR8860T1, M36LLR8860D1 M36LLR8860M1, M36LLR8860B1 2 x 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 2 dice of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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m36llr8860t1m36llr8860d1m36llr8860m1m36llr8860b1+7880dh880ehm30l0r8000tram 2112 256 wordj-std-020bm30l0r8000b0m30l0r8000t0
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china car DVD program ic
Abstract: VFBGA60 M58LW128A M58LW128B TFBGA80 TSOP56 128-mbit flash STMicroelectronics TRACEABILITY code
Contextual Info: TA260 TECHNICAL ARTICLE An Unprecedented Offer of High Density Flash Memories for Code and Data Storage Anne JOURNEAU MPG Communications STMicroelectronics Rousset, France Mobile communications, Internet and the digital consumer revolution are demanding higher storage capacities for code and data storage. While
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ta260china car dvd program icvfbga60m58lw128a+5m58lw128btfbga80tsop56128-mbit flashstmicroelectronics traceability code
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CR10
Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0
Contextual Info: M30L0R7000T0 M30L0R7000B0 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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TBGA64
Abstract: TSOP56 Package Tape J-STD-020B M30LW128D M58LW064D TSOP56
Contextual Info: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE WIDE x8 or x16 DATA BUS for HIGH
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m30lw128d64mbitx8/x16m58lw064d+7110ns110/25nskword/128kbytetbga64tsop56 package tapej-std-020btsop56
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m29F DATASHEET
Abstract: M29W320DB M28W640 M29Fxxx TFBGA63 M29DW640DB tsop48 M28W160CB M28W160CT M28W320ECT
Contextual Info: Flash memory solutions STMicroelectronics - May 2003 - Printed in Italy - All rights reserved ORDERCODE: CODE: BRFLASHCON/0503 ORDER for consumer applications For selected STMicroelectronics sales offices fax: France +33 1 55489569; Germany +49 89 4605454; Italy +39 02 8250449; Japan +81 3 57838216; Singapore +65 6481 5124;
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brflashcon/0503tbga80m29f datasheetm29w320db+8m28w640m29fxxxtfbga63m29dw640dbtsop48m28w160cbm28w160ctm28w320ect
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M30LW128D
Abstract: M58LW064D TSOP56 TSOP56 Package Tape 56-Lead TSOP Package
Contextual Info: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■
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m30lw128d64mbitx8/x16m58lw064d+6tsop56110ns110/25nskword/128kbytetsop56 package tape56-lead tsop package
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M36LLR8760x1
Abstract: M36LLR8760T1 M30L0R8000 PSRAM RAM 2112 256 word M36LLR8760B1 M36LLR8760D1 M36LLR8760M1 M69KB096AA
Contextual Info: M36LLR8760T1, M36LLR8760D1 M36LLR8760M1, M36LLR8760B1 256 + 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package TARGET SPECIFICATION FEATURES SUMMARY • ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple
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m36llr8760t1m36llr8760d1m36llr8760m1m36llr8760b1+8880dh88c4h880ehm36llr8760x1m30l0r8000psramram 2112 256 wordm69kb096aa
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