M30L0T8000T0 Search Results

CR10

Abstract: 4047N
Contextual Info: M30L0T8000T0 M30L0T8000B0 256 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V core, 3V I/O Flash memory Feature summary • ■ Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 2.2V to 3.6V for I/O Buffers – VPP = 9V for fast program (12V tolerant)