LE70 Search Results

UPD4216402

Contextual Info: NEC pPD4216402, 4217402 4,194,304 X 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The /JPD4216402 and the /JPD4217402 are staticcolumn dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt

3we22

Abstract: 8001P
Contextual Info: blE ]> n e • bllE7SES 0033^02 Tflfl HNECE jjPD421x 800/L, 42S1x800/L w NEC Electronics Inc. NEC ELECTRONICS INC Description The devices listed below are fa s t-p a g e dynam ic RAMs o rganized as 2M words by 8 bits a n d designed to o p e ra te from a single pow er supply. O ptional features

K1537

Contextual Info: NEC NEC Electronics Inc. Description The ¿/PD424263A/L and /iPD42S4263A/L are fast-page dynam ic RAMs w ith the w rite-per-bit option, organized as 262,144 words by 16 bits, and designed to o p e ra te from a single pow er supply. Optional features are power supply voltage + 5 V or

AO16A

Abstract: nec v70 A819
Contextual Info: NEC JUPD4216410, 4217410 4,194,304 x 4-Bit Dynamic CMOS RAM NEC Electronics Inc. Advance Information Description The /j PD4216410 and the pPD4217410 are fast-page dynamic RAMs with write per-bit organized as 4,194,304 words by 4 bits and designed to operate from a single

Contextual Info: SEC pPD4216100, 4217100 16,777,216 X 1-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The juPD4216100 and the /iPD4217100 are fast-page dynamic RAMs organized as 16,777,216 words by 1 bit and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­

Contextual Info: 1^ 1 W NEC Electronics Inc. pPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM Preliminary Information Description The /L/PD424260A/L and /JPD42S4260A/L are fast-page dynamic RAMs organized as 262,144 words by 16 bits and designed to operate from a single power supply:

D4217400

Abstract: nec 4217400
Contextual Info: JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/PD4216400 and the /JPD4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­

Contextual Info: fjPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM ¿ Y fiW NEC Electronics Inc. Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single power supply. O ptional features

Contextual Info: NEC 3CT 2 e 1992 NEC Electronics Inc. fiPD424190A/L, 42S4190A/L 262,144 X 18-Bit Dynamic CMOS RAM Preliminary Information Description The ¿¿PD424190A/L and /JPD42S4190A/L are fast-page dynam ic RAMs organized as 262,144 words by 18 bits and designed to o perate from a single pow er supply.

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

Contextual Info: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features

nec 424800

Contextual Info: bMB?S25 00410^0 EC 2^7 A TA S H E ET 3 MOS INTEGRATED CIRCUIT /¿PD424800-L 4M B IT D Y N A M IC RAM F A S T PA G E M ODE D ESCRIPTIO N The N E C juPD4 2 48 00 -L is a 524288-word by 8 bits dynam ic CMOS RAM w ith optional fast page mode. CMOS sense am plifier, peripheral circuits and 1 transistor memory cell technique realize high speed access, cycle time

Contextual Info: NEC pPD424900A/L, 42S4900A/L 524,288 X 9-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ¿/PD424900A/L and /UPD42S4900A/L are fast-page dynam ic RAMs organized as 524,288 words by 9 bits a nd designed to o p e ra te from a single power supply. O ptional features are pow er supply voltage + 5 V or

LE-60

Abstract: 42S18
Contextual Info: jtiPD421x160/L, 42S1x160/L x = 6, 7, 8 1,048,576 x 16-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 1 M words by 16 bits and designed to operate from a single power supply. Optional features

SL680C

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ _ _ /¡u P D 42S 16800,4216800,42317800,421780C 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800, 4216800, 42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The

D4242

Abstract: 3V07
Contextual Info: NEC NEC Electronics Inc. Description The /L/PD424263A/L and /iPD42S4263A/L are fast-page dynam ic RAMs w ith the w rite-per-bit option, organized as 262,144 words by 16 bits, and designed to o p e ra te from a single pow er supply. Optional features are pow er supply voltage + 5 V or

SAB9076H

Abstract: QFP100 philips capacitor part numbering system 16Main MHRPN01
Contextual Info: Philips Semiconductors Picture-in-Picture Controller SAB9076 Application Note AN 96027 APPLICATION NOTE APPLICATION INFORMATION FOR PICTURE IN PICTURE CONTROLLER SAB9076 AN96027 Author s : G. Bauhuis Design & Application Department, Consumer ICs Nijmegen,

DA736

Abstract: 24pin 2k 64 da73 D-A73
Contextual Info: N E C ELECTRONICS INC jm jm i M LIE D NEC Electronics Inc. • bM2752S 0033*153 1Û7 « N E C E PPD4216102, 4217102 16,777,216 X 1-Bit Dynamic CMOS RAM Advance Information Description The/¿PD4216102 and the ¿/PD4217102 are static-column dynamic RAMs organized as 16,777,216 words by 1 bit

4623A

Abstract: K311 LE-60 GD34063
Contextual Info: blE » • b427525 0D34G75 flìfl «NECE jiPD421x180/L, 42S1x180/L x = 6, 7, 8 NEC Electronics Inc. 1,048,576 x 18-Bit Dynamic CMOS RAM _N E C ELECTRONICS INC 7~~ '¿U-l# W M li W Description The devices listed below are fast-page dynamic RAMs

nec 4217400

Abstract: nec 4216400 4216400
Contextual Info: N E C ELECTRONICS INC blE D NEC NEC Electronics Inc. • h4275S5 RRb H N E C E JJPD4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM ~ h Description T he ¿/PD4216400 and the //PD 4217400 are fast-page d ynam ic RAMs organized as 4,194,304 words by 4 bits

zl6 zener

Abstract: Max 17113 SE528 TRANSISTOR E507 e507 LE50 equivalent transistor LE37 1008 W zener zl5 LE44 LE67
Contextual Info: MI L-M-38510/134 6 MILITARY MAY 1985 SPECIFICATION M I C R O C I RC U I TS , L I N E A R , ANALOG-TO-DIGITAL CONVERTERS WITH 3-STATE BUFFERED 10 B I T OUTPUTS, MONOLITHIC S I L I C O N This s p e c i f i c a t io n is ments and Agencies 1. a p p r o v e d f o r use by a l l D e p a r t ­

Contextual Info: m e NEC Electronics Inc. Description The /JPD424900A/L and /iPD42S4900A/L are fast-page dynamic RAMs organized as 524,288 words by 9 bits and designed to operate from a single power supply. Optional features are power supply voltage +5 V or +3.3 V and a new refresh mode called “ self-refresh.”

Contextual Info: SEC J1PD424280A/L, 42S4280A/L 262,144 X 18-Bit Dynamic CMOS RAM NEC Electronics Inc. Description The ^PD424280A/L and ¿/PD42S4280A/L are fast-page dynamic RAMs organized as 262,144 words by 18 bits and designed to operate from a single power supply. Optional features are power supply voltage +5 V or

Contextual Info: ffPD421x900/L, 42S1X900/L x = 6, 7 2,097,152 X 9-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Description The devices listed below are fast-page dynamic RAMs organized as 2M words by 9 bits and designed to operate from a single power supply. Optional features