LC 1088 Search Results

IRFZ44N complementary

Abstract: IRFz44n equivalent HRF3205 equivalent IRF3710 equivalent IRF3205 equivalent IRFP064N equivalent IRFP064N IRF3205 COMPLEMENTARY IRF3205 IRF3415 equivalent
Contextual Info: 108872 UltraFet LC 00045 8/29/00 11:16 AM Page 1 Fall 2000 Update UltraFET Summary Don’t Forget Intersil’s popular UltraFET family of over 200 products, from 30V to 200V. Find the perfect match for your circuit on our Line Cards: Automotive LC-00005.1,

2SD2159

Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise

LFB315G82SN5-996

Abstract: LFB32426MSC1-603 LFB31SL LFB321G44SA1A538 LFB32205MSK1-948
Contextual Info: Filters for Communication Equipment 03.02.28 for RF/Local Chip Multilayer LC Filters BPF o LFB31_SG Series (1206) Frequency Characteristics 1.2±0.1 3.2±0.15 A : Directional Input Mark (1) (3) : GND (2) : OUT (4) : IN 10 20 20 30 30 40 40 50 50 60 60 70

LFB315G82SN5-996

Abstract: LFB322G45SN1A504 LFB322G45SN1-947 LFB32426MSC1-603 LFB32205MSK1-948 LFB321G47SJ1-794 LFB311G95SG3A564 2100-2200MHz LFB31SL LFB311G40SL1A562
Contextual Info: Filters for Communication Equipment 03.12.9 for RF/Local Chip Multilayer LC Filters BPF o LFB31_SG Series (1206) Frequency Characteristics 1.2±0.1 3.2±0.15 A : Directional Input Mark (1) (3) : GND (2) : OUT (4) : IN 10 20 20 30 30 40 40 50 50 60 60 70

SAFSD1G57FA0T00

Abstract: SAFSE1g95 835MHz SAFSD LFD212G45D LFB182g45 safzd 3665M LFD212G45DP4A189 SAFEH1G84FB0F
Contextual Info: Filters for Communication Equipment 05.05.30 for RF/Local Chip Multilayer LC Filters BPF o LFB18/21/2H/31_SG Series Frequency Characteristics 0.6±0.1 0.30-0.15 0.25±0.15 1.6±0.1 A +0.2 +0.10 (2) 0.8 -0.1 (4) 0.15±0.10 (1) 10 10 20 20 30 30 40 40 50 50

SAFEB1G57KA0F00

Abstract: SAFEB1G57FM0F00 LFD182G45 LFD21874MDP1A084 SAFeB1G84FA0F00 SAFEB1G57KA LFD21859MDP1A049 LFD182G45DP3A299 LFB212G45BA1A220 SAFEB1G57KB0F00
Contextual Info: Filters for Communication Equipment for RF/Local Chip Multilayer LC Filters BPF o LFB18/21/2H/31_SG Series 0.6±0.1 +0.2 +0.10 (2) 0.8 -0.1 (4) 0.15±0.10 (1) 0.30-0.15 0.25±0.15 Frequency Characteristics 1.6±0.1 A 10 10 20 20 30 30 40 40 50 50 60 60 Attenuation (dB)

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

MPS-U06

Abstract: MPSU06 transistor MPS-U05 MPSU06 MPSU05 MPSU-05 transistor 1005 oj transistor MPSU05 H1251 MPSU55
Contextual Info: MPS-U05 SILICON MPS-U06 NPN SILICON AM PLIFIER TRANSISTORS NPN SILICON ANNULAR AM PLIFIER TRANSISTORS . . . designed fo r general-purpose, high-voltage am plifier and driver applications. • High C o lfector-E m itter Breakdown Voltage — B V q e O = 6 0 Vdc (M in) @ lC = 1.0 m Adc - M P S -U 0 5

Contextual Info: Temic TLMK3100 S e m i c o n d u c t o r s High Intensity SMD LED Color Red Type TLMK3100 Technology AlInGaP on GaAs Angle of Half Intensity ±cp 60° Description This device has been designed to meet the increasing de­ mand for AlInGaP technology. The package of the TLMK3100 is the P-LC C-2 equiva­

LQ070T5DG01

Abstract: lcd inverter HIU-288 GS21 GS42 SM02 DH48C LQ070T5 D854
Contextual Info: PREPARED 8Y DATE S APPROVED BY H A R P SPEC No. F IL E No. IS SU E LC Y -9 8 1 0 3 Sep. 03. 1998 DATE TFT L IO U ID CRYSTAL D ISP LA Y GROUP PAGE: SHARP CORPORATION 19 pages A P P L IC A B L E GROUP TFT L IQ U ID CRYSTAL D IS P L A Y S P E C I F I C A T I O N

KE4416

Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
Contextual Info: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents

2N5302

Contextual Info: 7 15 * 15 37 OQg^S^ SGS-THOMSON [Mæ iCTiMO gS S 6 S - THOMSON 1 • 3 - ( £=> 2N5301/02/03 2N4398/99/5745 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in­

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

C486

Abstract: ic 192 ttl laser transmitter circuit diagram C482 C484 D2526 GR-253-CORE STM-16 C482CD53 C484YD33
Contextual Info: Data Sheet, Rev. 3.0 November 2003 C482, C484, and C486 C48-Type 2.5 Gb/s Cooled Laser Transmitters • t ONICS uLEin CTR E TOrPiQ TO ries S e te r C48 nsmit Tra Wide operating case temperature range, –15 °C to +70 °C ■ Laser bias monitor alarm/laser degrade alarm

D38S5

Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A
Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 21 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistors PMBTA92; PMBTA93 FEATURES

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BD953

Contextual Info: BD949; 951 BD953; 955 y v . SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and for switching applications.

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

A733P

Abstract: H Sa 733p 733P a733q transistor 733q 733-P 733q 2pa733 sa 733p
Contextual Info: DISCRETE SEMICONDUCTORS 2PA733 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 25 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 21 PHILIPS Philips Semiconductors Product specification PNP general purpose transistor

Marking BA SOT89

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PXTA92 PNP high-voltage transistor Product specification Supersedes data of 1997 Jun 20 Philips Sem iconductors 1999 Apr 29 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 FEATURES

T483

Abstract: 2.5-gb transmitter 24-pin GR-253-CORE STM-16 T481 T485 T485FDAA InGaas PIN photodiode, 1550
Contextual Info: Data Sheet, Rev. 1 February 2003 TriQuint Optoelectronics T48-Type 1300 and 1500 nm Uncooled 2.5 Gb/s Laser Transmitters Applications T Tr 48 an -T sm yp itt e er nt TOR uOiNDUC Q i TrSEMIC • ■ Telecommunications: — SONET/SDH SR/IR/LR — Subscriber loop

GR-253-CORE

Abstract: STM-16 T481 T483 T485 xlaa InGaas PIN photodiode, 1550 DFB 1300 rise time
Contextual Info: a8e re AdLib OCR Evaluation systems Data Sheet, Rev. 1 October 2001 T48-Type 1300 and 1500 nm Uncooled 2 .5 Gbits/s Laser Transmitters Applications . Telecommunications : - SONET/SDH SR/IR/LR - Subscriber loop - Metropolitan area networks . High-speed data communication

D38S7

Abstract: D38S1 D38S5 D38S1-10 D38S2 D38S3 D38S4 D38S8 D38S
Contextual Info: Silicon Transistors The General Electric D38S1-10 series are NPN silicon, planar, epitaxial, transistors. They feature super high gain and low collector saturation voltage as well as a low noise figure. They are ideal for low level low noise amplifier and battery operated applications and output stages o f operational