LATEST AMPLIFER Search Results

10k resistor-datasheet

Abstract: CBJR70A BNC triaxial Connectors panel right angle 293D106X0025C2TE3 Triax* trompeter LMP7721MA deutsch coax socket LMP7721 panel mount banana jack GRM216R61E105KA12D
Contextual Info: National Semiconductor Paul Grohe January 2010 Rev - 1.0 LMP7721 Multi-Function Evaluation Board Users' Guide Download the latest version of this document at: http://www.national.com/pf/LM/LMP7721.html#Boards 2009 National Semiconductor Corporation. 1 http://www.national.com

PIC16F72 inverter ups

Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
Contextual Info: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read

T-11-2500A-G-B

Contextual Info: 2.5 Gbps PIN-TIA Receiver 5V T-11-2500A-G-B Features • InGaAs/InP PIN Photodiode with transimpedance amplifer • High sensitivity with AGC (Auto Gain Control) • Differential ended output • Single +5V operation • -40 to +85˚C operating temperature

InP Photonics

Abstract: PIN-TIA application
Contextual Info: P/N: T-11-2315C-02-XX 155 Mbps PIN-TIA Receiver Modules Features InGaAs/InP PIN Photodiode with transimpedance amplifer High Responsivity Single +5V operation -40~85ºC operating temperature Single mode / Multi mode Application High Speed 8 Pin Package with SC Port

Contextual Info: P/N: T-11-2315T-04-XX 155 Mbps PIN-TIA Receiver Modules Features l InGaAs/InP PIN Photodiode with transimpedance amplifer l High Responsivi ty l Single +5V operation l -40~85° C operating temperature l For Single-mode Application l High Speed l 8 Pin Package with ST Port

T-11-2315T

Contextual Info: 155Mbps PIN-TIA Receiver Modules T-11-2315T-01 Features • InGaAs/InP PIN Photodiode with transimpedance amplifer • High Responsivity • Single +5V operation • -40~85ºC operating temperature • Single mode / Multi mode Application • High Speed • 8 Pin Package with ST Port

Contextual Info: 155Mbps PIN-TIA Receiver Modules T-11-2315T-04-XX Features • InGaAs/InP PIN Photodiode with transimpedance amplifer • High Responsivity • Single +5V operation • -40~85ºC operating temperature • Single mode / Multi mode Application • High Speed

PIN-TIA

Contextual Info: P/N: T-11-2315T-08-XX 155Mbps PIN-TIA Receiver modules Features l InGaAs/InP PIN Photodiode with transimpedance amplifer l High Sensitivity l Single +3.3V operation l -40~85° C operating temperature l For Single-mode and Multi-mode Application l High Speed

Contextual Info: 155Mbps PIN-TIA Receiver Modules T-11-2315C-02-XX Features • InGaAs/InP PIN Photodiode with transimpedance amplifer • High Responsivity • Single +5V operation • -40~85ºC operating temperature • Single mode / Multi mode Application • High Speed

Contextual Info: P/N: T-11-2500-D3-SXX-XX 2.5 Gbps PIN-TIA Receiver Modules-ROSA 3.3V Features InGaAs/InP PIN Photodiode with transimpedance amplifer High Sensitivity with AGC* Differential ended output Single Supply Voltage 3.3V -40~85°C operating temperature z z z z z

NE38018 V68

Abstract: NE38018 s2p NEC Ga FET marking L HS350 NE38018 NE38018-T1 VP215 NEC 703 NEC K 2500
Contextual Info: DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES • Super Low noise figure & High Associated Gain NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) TYP. @ f = 2 GHz

25gbps pin-tia

Contextual Info: P/N: T-11-2500-X3-XXX/XXX-XX 2.5Gbps PIN-TIA Receiver Modules 3.3V Features z z z z z InGaAs/InP PIN Photodiode with transimpedance amplifer High Sensitivity with AGC* Differential ended output Single Supply Voltage 3.3V -40~85°C operating temperature Packaging

Contextual Info: HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A08J Low Frequency Power Amplifer Applications Power Switching Application z z Unit: mm High DC Current Gain : hFE = 100 to 320 Low Saturation Voltage : VCE(sat) = −0.4V (max) (IC = −500mA , IB = −20mA)

HN4C08J

Contextual Info: HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C08J Unit: mm Low Frequency Power Amplifer Applications Power Switching Application z High DC Current Gain : hFE = 100~320 z Low Saturation Voltage : VCE(sat)=0.4V (Max.) : (IC = 500mA , IB = 20mA)

C band FET transistor s-parameters

Abstract: ne3210s01 NE3210S01-T1 NE3210S01-T1B
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

NE3210S01

Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

Laptop AC adapter 19V

Abstract: Laptop adapter 19V MAX4172 Laptop AC adapter 19V latest rs-12v 12v 100 amp battery load MAX4230 MAX4069 MAX4072 MAX4172EUA
Contextual Info: Maxim/Dallas > App Notes > BATTERY MANAGEMENT Keywords: Current Sense amp, Current sense amplifer, bidirectional, unidirectional, charge, discharge Aug 21, 2006 APPLICATION NOTE 3906 Creating a Bidirectional Current-Sense Amplifier from Two Unidirectional Current-Sense Amplifiers

Class D RF amplifer

Abstract: PTMA080302M
Contextual Info: Preliminary PTMA080302M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 30 W, 700 – 1000 MHz Description The PTMA080302M is a wideband, matched, 30-watt, 2-stage LDMOS integrated amplifier intended for use in all typical modulation

mitsubishi crt

Abstract: crt monitor block diagram M61314SP
Contextual Info: MITSUBISHI ICs MONITOR M61314SP 2 I C BUS CONTROLLED VIDEO PRE-AMP FOR HIGH RESOLUTION COLOR DISPLAY DESCRIPTION M61314SP is Semiconductor Integrated Circuit for CRT Display Monitor. It includes OSD Blanking,OSD Mixing,Retrace Blanking,Video detector,Sync Sepa ,Wide band Amplifer.

electrolytic capacitor 2200 uf

Contextual Info: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt LDMOS integrated circuits intended for base station applications. They can be used for all typical modulation formats

GRM422Y5V106Z050AL

Abstract: PTMA180402EL PTMA180402FL RO4350 H-33265-8
Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in

PTMA180402M

Abstract: PTMA180402M V1 marking
Contextual Info: PTMA180402M Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402M is a matched, wideband 2-stage, 40-watt LDMOS integrated amplifier intended for base station applications

Contextual Info: TQM3M7001 Data Sheet 802.11a/b/g Low Noise Amplifier Module Functional Block Diagram Vcc1 Features LNA_ON_52 LNA_OUT_52 • Fully Integrated, Dualband Low Noise Amplifier Module for 802.11a/b/g WLAN Systems • Internally Matched input/output • No External Components Required

TQM3M7001

Abstract: CMOS LNA at 2.4 GHz
Contextual Info: TQM3M7001 Data Sheet 802.11a/b/g Low Noise Amplifier Module Functional Block Diagram Vcc1 Features LNA_ON_52 LNA_OUT_52 • Fully Integrated, Dualband Low Noise Amplifier Module for 802.11a/b/g WLAN Systems • Internally Matched input/output • No External Components Required