LAND PATTERN FOR TSOP Search Results

land pattern for SSOP

Abstract: TSOP 86 land pattern land pattern for SOP land pattern for TSOP TSOP 48 Pattern land pattern PQFP 208 land pattern for TSOP 2 86 tip 3035 land pattern PQFP 132 land pattern PQFP 100
Contextual Info: Land Pattern Recommendations The following land pattern recommendations are provided as guidelines for board layout and assembly purposes. These recommendations cover the following National Semiconductor packages: PLCC, PQFP, SOP, SSOP and TSOP. For SOT-23 5-Lead and TO-263 (3- or 5-Lead) packages, refer to land patterns shown in the Physical Dimensions for

land pattern for TSOP

Abstract: land pattern for TSOP 2 land pattern for TSOP 2 50 TSOP 50 Package land pattern for tsop package
Contextual Info: Recommended Land Pattern for SST TSOP Devices Recommended Land Pattern for SST TSOP Devices Application Note October 2001 INTRODUCTION Designing in the 8mm x 14mm TSOP Package SST offers an 8mm x 14mm TSOP package for our bulk erase, Byte-Program SuperFlash MTP products and the

land pattern for TSOP

Abstract: TSOP 86 land pattern land pattern for SOP land pattern PQFP 208 land pattern for TSOP 2 86 MA05A land pattern for TSOP 2 land pattern for SSOP land pattern PQFP 100
Contextual Info: Land Pattern Recommendations The following land pattern recommendations are provided as guidelines for board layout and assembly purposes. These recommendations cover the following National Semiconductor packages: PLCC, PQFP, SOP, SSOP and TSOP. For SOT-23 5-Lead and TO-263 (3- or 5-Lead) packages,

1206 land pattern

Abstract: NOMCA MPMA HTRN
Contextual Info: Land Patterns www.vishay.com Vishay Dale Thin Film Vishay Dale Thin Film Land Patterns 1. Scope This technical note provides sample land patterns for Vishay Dale Thin Film SMT resistive products. The following drawings are based on IPC-SM-782 Surface Mount Design and Land Pattern Standard. These drawings are for reference only Vishay Thin

Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been

Contextual Info: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been

Contextual Info: UM5204EEXF Quad Channel Low Capacitance ESD Protection Array UM5204EEAF UM5204EEBF UM5204EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5204EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been

land pattern for TSOP

Abstract: 7402 DATA SHEET 7402 land pattern for TSOP 2
Contextual Info: TSOP 1 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (Lp) I2 β1 MID HD+2 β 2 Lp β2 b b2 Dimension Parameter e 0.50 β1 β2 γ 0.20 0.20 0.25 e b2 L1 MID A3=0.25 HD D I2 GDMIN. =HDMIN. −2Lp MAX. MID=GDMIN. −2 β 1 I2 (HDMAX. +2 β 2 −MID)/2

land pattern for TSOP

Abstract: 7402 ED-7402 DATA SHEET 7402 7402 data sheet ed 012GL 2008 land pattern for TSOP 2
Contextual Info: TSOP 1 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (L) HD D I2 β1 MID HD+2 β 2 β2 L b b2 Dimension Parameter e 0.50 β1 β2 γ 0.20 0.20 0.25 b2 e L1 MID I2 GDMIN. =HDMIN. −2LMAX. MID=GDMIN. −2 β 1 I2 (HDMAX. +2 β 2−MID)/2

land pattern for TSOP

Abstract: land pattern for TSOP 2
Contextual Info: TSOP 2 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (L) HE E I2 β1 MIE HE+2 β 2 L β2 b b2 Dimension Parameter e 1.27 0.80 β1 β2 γ 0.20 0.20 0.30 to 0.57 0.20 0.20 0.30 b2 e L1 MIE I2 GEMIN. =HEMIN. −2LMAX. MIE=GEMIN. −2β 1

land pattern for TSOP

Abstract: land pattern for TSOP 2
Contextual Info: TSOP 2 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (Lp) I2 β1 MIE HE+2 β 2 Lp β2 b b2 Dimension Parameter e 1.27 0.80 β1 β2 γ 0.20 0.20 0.30 to 0.57 0.20 0.20 0.30 e b2 L1 MIE A3=0.25 HE E I2 GEMIN. =HEMIN. −2Lp MAX. MIE=GEMIN. −2 β 1

LPC2468 reflow solder profile

Abstract: 0.65mm pitch BGA 1mm pitch BGA AN10778 MO-275 TFBGA208 LFBGA32 LPC2468 pcb SOT1018-1 nxp cross
Contextual Info: AN10778 PCB layout guidelines for NXP MCUs in BGA packages Rev. 01 — 22 January 2009 Application note Document information Info Content Keywords LPC2220, LPC2292, LPC2364, LPC2368, LPC2458, LPC2468, LPC2470, LPC2478, LPC2880, LPC2888, LPC3130, LPC3131, LPC3151, LPC3152, LPC3153, LPC3154, LPC3180/10, LPC3220,

PCB layout guidelines for NXP MCUs in BGA packages

Abstract: LBGA256 AN10778 LPC2468 reflow solder profile land pattern for TSOP 2 54 pin NXP lpc LPC175x LFBGA256 lpc433x TSOP 54 land pattern
Contextual Info: AN10778 PCB layout guidelines for NXP MCUs in BGA packages Rev. 2 — 15 April 2011 Application note Document information Info Content Keywords LPC175x, LPC176x, LPC177x, LPC178x, LPC181x, LPC182x, LPC183x, LPC185x, LPC431x, LPC432x, LPC433x, LPC435x, LPC2220, LPC2292,

land pattern for TSOP

Abstract: land pattern for TSOP 2 SO32-S-L-01 SO32B
Contextual Info: 17.78 [0.700"] 1 Top View 0.5 [0.020"] 32 1.27 [0.050"] 0.64 [0.025"] 0.3 [0.012"] 17 16 9.22 [0.363"] 1.59 [0.063"] 13 [0.512"] 24.13 [0.950"] 1 6.39 [0.252"] Front View 2 1 16 17 9.65 [0.380"] 6.61 [0.260"] Side View 1 32 7.88 [0.310"] Bottom View Description: SOIC TSOP II to SOIC (TSOP I) Package Converter

land pattern for TSSOP-8

Abstract: PowerPAK 1212-8 tssop8 thermal performance land pattern for TSSOP land pattern for ppak land pattern for TSOP TSSOP-8 footprint TSOP 48 thermal resistance so-8 vishay weight PowerPAK SO-8
Contextual Info: AN822 Vishay Siliconix PowerPAK 1212 Mounting and Thermal Considerations Johnson Zhao MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available

TK12A10K3

Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4

land pattern for PSOP

Contextual Info: Plastic dual in-line package PDIP 20 pin 300 mil Min A Al B b c D E El c tA L a S 0.010 0.046 0.018 0.008 28 pin 300 mil Max 0.175 0.054 0.024 0.014 0.980 0.310 0.290 0.263 0.293 0.100 BSC 0.310 0.3S0 0.130 0.110 0° 15° 0.040 Min 0.010 0.0.58 0.016 C.008

INTEL application notes

Abstract: land pattern BGA 0.75 PCB design for very fine pitch csp package land pattern for TSOP 2 1mm pitch BGA socket land pattern for TSOP BGA reflow guide pcb thermal Design guide trace theta layout micro pitch BGA socket s1 SOLDER PROFILE
Contextual Info: 5.0 5.1 5.2.1 MANUFACTURING CONSIDERATIONS SMT Process Many factors contribute to a high yielding assembly process. A few of the key focus areas and their contributing factors are highlighted in Table 7. 5.2 PCB Design Guidelines One of the key efforts in implementing the

Contextual Info: Si7818DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.135 at VGS = 10 V 3.4 0.142 at VGS = 6 V 3.3 Qg (Typ.) 20 nC • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET

Contextual Info: Si7913DN Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 7.4 - 20 0.048 at VGS = - 2.5 V - 6.5 0.066 at VGS = - 1.8 V - 55 • Halogen-free According to IEC 61249-2-21 Available

Contextual Info: Si7900AEDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.026 at VGS = 4.5 V 8.5 20 0.030 at VGS = 2.5 V 8 0.036 at VGS = 1.8 V 7 • Halogen-free Option Available • TrenchFET Power MOSFET: 1.8 V Rated

Contextual Info: Si7414DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8.7 0.036 at VGS = 4.5 V 7.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • PWM Optimized

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies