LAFL Search Results

AN-1072

Abstract: GTLP16612 AN-1072 national
Contextual Info: Fairchild Semiconductor Application Note 1072 Peter LaFlamme February 1998 INTRODUCTION GTLP device technology was invented by Fairchild Semiconductor as a high speed backplane interface solution. It has reduced output swing Note 1 and patented output circuitry

AN-1072

Abstract: GTLP16612 AN-1072 national
Contextual Info: Fairchild Application Note 1072 Peter LaFlamme February 1997 INTRODUCTION GTLP device technology was invented by National Semiconductor as a high speed backplane interface solution. It has reduced output swing Note 1 and patented output circuitry to address one of the most prevalent problems with high

Contextual Info: nm\c AN 103 A N 103 CB h 7 > - PLL J^laflillSS/PLL Peripheral Circuit for CB Transceivers H ISt ^ / D e s c r i p t i o n AN 103 i±, CB h 7 > ->-'< $ PLL V.C.O., ittfr, <r>fsiin [ n ] > L T K lf iMl -f , H iit/F eatures • V.C.O, :& {f, iffitsW ifti-rtrl

si 13001

Abstract: N-6 L 50 T6 S 203 R GLDG IH 13001 SIRA 00ATEX1037X ST 13001 tr 13001 A300 00ATEX1037X N-6 L 50 T6 S 203
Contextual Info: d r a w 9 RASTER PAGE 1 S A V 14 JU L 00 n m o c n M BX SERIES CHART 1 S* B C S L i n « OF 4 _ REPUCEI 1 4 JU L0 0 50,60 SIDE ROTARY h NOTES 1 - CONSTRUCTED IN ACCORDANCE WITH E N -5 0 0 M / E N -5 0 0 B GROUP 11 C 2 - VOLUME: 2 7 CUL IN. 4 4 2 OJ. CM. APPROX

8x83104

Abstract: 8x8 vcp taser circuit T79 SMD SiS chipset 486 hep 154 8x8 inc FL221 8x831 Asg smd
Contextual Info: 8x8« Inc* 8x83104 VCP DATAS ME ET 8X 8 V C P Single Chip Video Codec and Multimedia Communications Processor FEATURES * H.261 Codec OVERVIEW The. 8x8 VCP js a single-chip programmable video codec, and multimedia communications processor. The VCP requires only memory and interface cir­

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

BroadVoice16

Abstract: n25F acelp perceptual audio
Contextual Info: Efficient VQ Techniques and General Noise Shaping in Noise Feedback Coding Jes Thyssen and Juin-Hwey Chen Broadcom Corporation, Irvine, California, USA jthyssen@broadcom.com, rchen@broadcom.com Abstract This paper describes new efficient Vector Quantization VQ

1N3064

Abstract: 1N916 C67L4033D
Contextual Info: First-In First-Out FIFO 64x5 Memory 15 MHz (Cascadable) Features/Benefits • High-speed 15 MHz shlft-ln/shift-out rates • High drive capability • Low-power consumption C 67L4033D Ordering Information PART NUMBER PKG TEMP DESCRIPTION C67L4033D N,J Com

MSM5116180-70

Abstract: MSM5116180-80
Contextual Info: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

32-PIN

Abstract: A10E MSM51V16900-70 MSM51V16900-80
Contextual Info: O K I Semiconductor MSM51V16900_ 2,097,152-Word x 9-Bit D Y N A M IC R A M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V16900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51V16900 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Contextual Info: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.

MSM5117180-70

Abstract: MSM5117180-80
Contextual Info: O K I Semiconductor MSM5 1 17180 _ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117180 is OKI's CMOS silicon gate process technology.

LUXEON Altilon

Abstract: RB1A Luxeon driver schematic AEC-Q101C LAFL B50L80 Luxeon driver schematic 20 w DS-66 Luxeon altilon core DS66
Contextual Info: LUXEON Altilon Automotive Forward Lighting Source Technical Datasheet DS66 LUXEON Altilon Automotive Forward Lighting Source Introduction LUXEON® Altilon LEDs are specifically designed and tested to meet and exceed expectations for reliability, performance, and lifetime in automotive forward lighting

A11A

Abstract: PX434 ZEL MA 30 VU
Contextual Info: HY5116404A Series HYUNDAI 4M X 4-bit CMOS DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit The HY5116404A utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

handbook of shipboard electromagnetic shielding practices

Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
Contextual Info: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command

Contextual Info: 7fl2ficm Motor driver ICs G G lflfltn T31 2-phase half-wave motor predriver BA6402F The BA6402F is a 2-phase, half-wave motor predriver suitable for fan motors. • Features 1 Lock d e te ctio n and ro ta tio n a l speed sensing mechanisms are built in. 2) Hall constant current source is built in.

CH900

Abstract: ICS90c63
Contextual Info: C Chrontel CH92C64 CH92C64 Dual Graphics Clock Generator Description Features 16 video clock frequencies, including one external frequency input, and 8 memory clock frequencies Supports graphic standards such as VGA, SuperVGA, XGA, and 8514A Supports output frequencies up to 135 MHz

RB1A

Abstract: Luxeon altilon core
Contextual Info: LUXEON Altilon Automotive Forward Lighting Source Technical Datasheet DS66 LUXEON Altilon Automotive Forward Lighting Source Introduction LUXEON® Altilon LEDs are specifically designed and tested to meet and exceed expectations for reliability, performance, and lifetime in automotive forward lighting

DE-150

Abstract: z diode 14a
Contextual Info: 2849995 DIRECTED ENERGY I NC ~~T7 97D 00006 D eT| 20 4=1^5 □□□ODOfc, 3 J “ DE-150 SERIES □ DATA SHEET DIRECTED ENERGY, INC. DE-150 10IN14 SPECIFICATIONS PULSED POWER COMPONENTS AND SYSTEMS The Centre for Advanced Technology 2301 Research Blvd., Suile 101

JC030B

Abstract: HHL SOT JC030A JC030C UL-1950 22A 6CA
Contextual Info: Data Sheet February 1994 ^A T& T Microelectronics JC030-Series Power Modules: 18 Vdc to 36 Vdc Inputs; 30 W Features • Small size: 2.40 in. x 2.28 in. x 0.50 in. ■ Low output noise ■ Constant frequency ■ Industry-standard pinout ■ Metal case ■ 2:1 input voltage range

WC-340

Contextual Info: -HYUNDAI HY51V16400A Series 4M X 4-bit CMOS DRAM DESCRIPTION The H Y51V16400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

Bv 42 transistor

Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
Contextual Info: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.

dionics

Abstract: MO chip Transistor Monolithic Transistor Pair NPN Monolithic Transistor Pair
Contextual Info: Detailed S pecifications on Reverás Sido, Dl 4044 • 4878 Dl 4100 • 4879 Dl 4045 •4880 Dl 4045-1 □IONICS INC. ea flufiHMOlif St. wf fiifiuar. n.y. 11360 3iB-i9TT74f< NPN SILICON MATCHED PAIR TRANSISTOR CHIPS WITH MATCHING CHARACTERISTICS 100*. PROBED