LA SOT363 Search Results

LA-4611P

Abstract: KB926QFA1 south bridge SIS 968 la4611 sis m672 307ELV SiS307ELV ICS9LPR600 JP36B kb926qf
Contextual Info: A B PJP1 PJP1 14W_DCIN 15W_DCIN 14W_45@ 15W_45@ C D E 1 1 Compal Confidential KSW01/91 Schematics Document 2 2 Intel Merom Processor with SiSM672/FX + DDRII + SiS968 + SiS307ELV 2008-08-01 ZZZ9 3 REV: 0.2 PCB ZZZ1 ZZZ3 ZZZ4 ZZZ5 ZZZ6 PCB LA-4611P LS-4243P

OZ960

Abstract: zener diode 7A3 inverter 16b2 zener diode zener 15B2 diode 21D8 10 C4237 54b6 diode 21D8 zener 9A2 11b3 DIODE ZENER
Contextual Info: CR-1 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. PAGE D C 4,5 6,7 8 9 MPC7450 MAXBUS CPU SPEED & CONFIG OPTIONS BOOTBANGER CPU LA CONNECTORS, ESP, CPU BYPASS

kbc 1098

Abstract: KBC1098-NU smsc kbc 1091 kbc1098 Smsc kbc1098 MMBT3904WH 2N7002DWH smsc kbc 1098 HCB2012KF-121T50 RTM890N-632-GRT
Contextual Info: A B C D E 1 1 Compal Confidential Schematics Document 2 2 INTEL AUBURNDALE with IBEX core logic Cartier UMA 3 3 LA-4902P 2009-12-07 REV:1.0 4 4 Compal Secret Data Security Classification 2008/09/15 Issued Date 2009/12/31 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

BGA2022

Abstract: Mixer sot363
Contextual Info: P hilips S em ico n d uctors O b jective sp ecification M M IC m ixer B G A 2022 FEATURES PIN NING S O T363 • L a rg e fre q u e n c y ran ge : - PIN D ES C R IPTIO N c e llu la r b a nd 90 0 M H z 1 LO - g ro u n d - P C S b a n d (1 9 0 0 M H z) 2 L O - s ig n a l

PMGD400UN

Abstract: PMF290XN PMF370XN PMF400UN PMF780SN PMGD290XN PMGD370XN PMGD780SN PMGD8000LN clk sot323
Contextual Info: M £=]M npr • ipr mmw IjTrenchMOS Se " ß m um m i« * ! lEE SOT323 PI SOT363 î 5 g | $ î § 20v >30vS|60vSnì1 jìmosfets B9 8 H « S ^ g {a] b m * - tv § ?ì jr~ mm \ f2 mm tJfV e "f Kf l £>>r ffifc-ffl « S ii? h SS tf - m 'm % àfc ° as ^ Ê^

Contextual Info: DISCRETE SEMICONDUCTORS BGA2022 MMIC mixer Objective specification Supersedes data of 1999 Jan 14 Philips Sem iconductors 1999 Feb 25 PHILIPS Philips Semiconductors Objective specification MMIC mixer BGA2022 FEATURES PINNING SOT363 • Large frequency range:

Contextual Info: MOTOROLA Order this document by MDC5001T1/D SEMICONDUCTOR TECHNICAL DATA MDC5001T1 Low Voltage Bias Stabilizer w ith Enable • Maintains Stable Bias Current in N -Type Discrete Bipolar Junction and Field Effect Transistors • Provides Stable Bias Using a Single Component W ithout Use of Emitter Ballast

Contextual Info: DISCRETE SEMICONDUCTORS PUMH7 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Jun 29 Philips Sem iconductors 1999 Apr 22 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor

RQ TRANSISTOR

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMD12 NPN/PNP resistor-equipped transistor Product specification Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD12 FEATURES • Transistors with different polarity

lm 9805

Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Objective specification MMIC mixer BGA2022 FEATURES PINNING SOT363 • Large freq uency range: PIN DESCRIPTION - cellular band 900 MHz 1 LO - ground - PCS band (1900 MHz) 2 LO - signal

tps51225

Contextual Info: User's Guide SLVU735 – June 2012 Dual Synchronous Step-Down Fixed Output Controller with 5-V and 3.3-V LDOs The TPS51225EVM-133 evaluation module EVM uses the TPS51225. The TPS51225 is a D-CAP mode, dual synchronous step down controller with 5- and 3.3-V low-dropout regulators (LDO). The EVM

MOSFET 4466

Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS PÄ m s ^i i t BGA2031 MMIC variable gain amplifier Objective specification 1998 Sep 01 File under Discrete Semiconductors, SC14 Philips Sem iconductors PHILIPS Philips Semiconductors Objective specification MMIC variable gain amplifier

Contextual Info: User's Guide SLUU311A – APRIL 2008 – Revised JULY 2012 High Performance Synchronous Buck EVM Using the TPS51125 1 2 3 4 5 6 7 8 Contents Introduction . 2

Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference

PJ4N

Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW
Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance

Contextual Info: SÌ1904EDH Vishay Siliconix New Product Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY 0 .8 1 0 @ V g s = 4 .5 V 0 .7 3 • TrenchFET Power MOSFETS: 2.5-V Rated • ESD Protected: 1800 V • Thermally Enhanced SC-70 Package 1 .04 @ V Gs = 0.65

PJ4N

Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.0V,IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@2.5V,IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)

K27 mOSFET

Abstract: MARKING K27 2N7002KDW LA sot363 2N7002KD k27 sot-363 60V N-Channel Enhancement Mode MOSFET - ESD Protected
Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 • RDS ON , VGS@10V,IDS@500mA=3Ω Unit: inch (mm) 0.054(1.35) 0.045(1.15) • High Density Cell Design For Ultra Low On-Resistance 0.030(0.75) 0.021(0.55) 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology

K27 SOT-363 MARKING

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) FEATURES 0.087(2.20) 0.078(2.00)

hall marking code A04

Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
Contextual Info: Introduction Advanced Digital r i Consumer Products L-l Microcomputer Components [2 Logic: Standard, Special p , and Programmable I-5* Analog and Interface Integrated Circuits Semiconductor r= Components Group L5 Product Literature and r~ Technical Training L”

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)

K2765

Contextual Info: 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.087(2.20) 0.074(1.90) 0.010(0.25) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15)