PMGD8000LN |
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NXP Semiconductors
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A new dimension in power; 20 V, 30 V and 60 V N-channel MOSFETs in SOT323 and SOT363 |
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PMGD8000LN |
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Philips Semiconductors
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Dual uTrenchMOS (tm) logic level FET |
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PMGD8000LN-01 |
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Philips Semiconductors
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SMD, Dual UTrenchMOS Power Amp., 30V 125mA 0.2W, MOS-FET N-Channel enhanced |
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PMGD8000LN,115 |
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NXP Semiconductors
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Dual uTrenchMOS logic level FET - Configuration: Dual N-channel ; ID DC: 0.125 A; Qgd (typ): 0.12 nC; RDS(on): 8000@4V13000@2.5V mOhm; VDSmax: 30 V; Package: SOT363 (SC-88); Container: Tape reel smd |
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PMGD8000LN,215 |
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NXP Semiconductors
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PMGD8000LN - PMGD8000LN - Dual N-channel TrenchMOS logic level FET |
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PMGD8000LNT/R |
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Philips Semiconductors
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Transistor Mosfet N-CH 30V 0.125A 6UMT T/R |
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