LA MARKING CODE PNP TRANSISTOR Search Results

DRAF143T

Contextual Info: DRAF143T Tentative Total pages page DRAF143T Silicon PNP epitaxial planar type For digital circuits Marking Symbol : LA Package Code : ML3-N4-B Internal Connection Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

TRANSISTOR b1181

Abstract: b1181 2SB1181F5
Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: B1181 ★□, where ★ is hFE code and □ is lot number • hig h b re a k d o w n v o lta g e a n d la rg e c u rre n t ca p a b ility : V q e o = - 8 ° V,

2SC1412

Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
Contextual Info: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type

Contextual Info: bbSBIBl DQ25T47 b47 « A P X N AHER PHILIPS/DISCRETE b7E J> PNP switching transistor Philips Semiconductors FEATURES Product specification PMST4403 PIN CONFIGURATION • S-mini package • High collector current. DESCRIPTION PNP silicon planar epitaxial transistor in a plastic SOT323

Contextual Info: Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • M edium freq uency applications in th ick and thin film

marking NC sot23

Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
Contextual Info: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available In MPT3 (MPT, SC-62) package • package marking: 2SB1132; BA*-, where ★ is hFE code 2SB1132 (MPT3) • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB) • low collector saturation voltage,

301 marking code PNP transistor

Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
Contextual Info: UMD3N IMD3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP

2SC1412K

Abstract: UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK
Contextual Info: @Features 1’ Two 2SA1037AK in UMT and SMT packages. 2‘ Mounting possible with UMT3 or SMT3 automatic mounting machines. l External dimensions Units: mm UMTl N 2OkO2 IMTl A 13t01 09kOl 065 (3 3‘ Transistor elements are independent, eliminating interference.

MARKING 9AB

Abstract: 9AB TRANSISTOR Code 9CB BC859 BC846 BC856 BC860 sot 23 mark 9CB
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 • Complement to BC846 . BC8S0 SO T -2 3 ABSOLUTE MAXIMUM RATINGS Ta=25°C

Contextual Info: H IGH FREQUENCY SM D TRANSISTORS DESCRIPTION • Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications

MARKING 3F TRANSISTOR

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 07 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC856W; BC857W PNP general purpose transistors FEATURES PINNING • Low current max. 100 mA

2PB710S

Abstract: 2pd710as 2PB710R "MARKING CODE CO" 2PB710 2PB710A 2PD602 2PD602A SC59 2PB710Q
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistors 2PB710; 2PB710A FEATURES • High collector current • Low collector-emitter saturation voltage • S-mini package. APPLICATIONS Intended for general purpose switching or amplification.

c125t

Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
Contextual Info: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-

tbc857c

Abstract: TBC857B
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification PNP general purpose transistors BC856T; BC857T FEATURES PINNING • Low curren t max. 100 mA

bf550

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jul 07 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 40 V).

transistor d 1933

Abstract: transistor marking code p2T PMST4403 VC80 marking code P2T
Contextual Info: Hi Philips Semiconductors N bbSBTBl AHER 0 0 2 5 T 47 b 47 HIAPX PH ILIPS/D ISCR ETE b?E Product specification J> PNP switching transistor FEATURES PMST4403 PIN CONFIGURATION • S-mini package » High collector current. DESCRIPTION PNP silicon planar epitaxial

JD 1803

Abstract: 2SA1870 100V 2A MPT3 2SA1900 2SC5053 marking code pj vat package marking code TRANSISTOR 2SA1870
Contextual Info: 2SA1870 Transistor, PNP Features Dimensions U n its : mm • available in PSD package • low collector saturation voltage, typicallyVCE(sat) = -0.2 V a t lc/lB = -6A /-0.3A • high switching speed, typically tf = 0.17 (AS for lc = -6 A • wide safe operating area (SOA)

BF550

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF550 PNP medium frequency transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING • Low current max. 25 mA

Contextual Info: SIEMENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array »Switching circuit, inverter, interface circuit, drive circuit * Two galvanic internal isolated NPN/PNP Transistor in one package • Built In bias resistor (R ^IO kiî, R2=47kiî) Tape loading orientation

transistor marking code HF

Abstract: 1n916 equivalent
Contextual Info: MMBT3906FN3 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts 250 mWatts POWER DFN 3L Unit：inch mm 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.021(0.55) • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA

sot323 marking code VL

Abstract: PMSS3906 transistor p06
Contextual Info: • b bS 3cì31 0025127 ÒSI « A P X N AMER PHILIPS/DISCRETE b7E Philips S em iconductors P roduct specification PNP general purpose transistor PMSS3906 FEATURES • S-mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, primarily intended for use

3Kp Transistor

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV62 PNP general purpose double transistor Product specification Supersedes data of 1997 Jun 18 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor

TRANSISTOR MARKING YC

Contextual Info: MMBT3906FN3 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts 250 mWatts POWER DFN 3L Unit：inch mm 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.022(0.55) • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA