L64 PACKAGE DIAGRAM Search Results

Contextual Info: CY7C171A CY7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Autom atic power-down when deselected • CMOS for optim um speed/power • High speed T he CY7C171A and CY7C172A are highperformance CMOS static RAMs orga­

CY7C171A

Abstract: CY7C172A K73 Package
Contextual Info: 4bE D 256=1^2 GGGbSBT T ESCYP ' CYPRESS SEMICONDUCTOR T 7 c f f a l 5 - G CY7C171A CY7C172A 8 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed — tAl\ = 15 ns

Contextual Info: CY7C171A CY7C172A CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed —- tAA = IS ns • Itansparent write 7C171A • Low active power — 375 mW • Low standby power

CY7C171-45DMB

Abstract: CY7C171-45LC
Contextual Info: CY7C171 CY7C172 CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power The CY7C171 and CY7C172 are high-performance CMOS static RAMs organized as

Contextual Info: CY7C291A CY7C292A/CY7C293A 'W CYPRESS = SEMICONDUCTOR Reprogrammable 2K x 8 PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 2 0 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

02JX

Abstract: cy7c291 CY7C291A CY7C292A CY7C293A SMD Code s13 CY7C291A-45DMB CY7C291-35WMB CY7C291-50QMB l64 diode
Contextual Info: Y P R E S S SEMICONDUCTOR 4bE » D S SflU b a 'T^fc-13-Z* CYPRESS SEMICONDUCTOR Features • Windowed for «program m ability • CMOS for optimum speed/power • High speed -¡•20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial and military)

Contextual Info: CY7C171A CY7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected T h e CY7C171A and CY7C172A are highperform ance C M O S static R A M s orga­ nized as 4096 by 4 bits with separate I/O .

CY7C171-45VC

Abstract: CY7C171-35PC 7c172
Contextual Info: CY7C171 CY7C172 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected T h e CY7C171 and CY7C172 are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 hits with separate I/O. Easy memory expansion is provided by an

FCT825BT

Abstract: 74fct825t 74FCT821 CY74FCT825BTSOC CY74FCT823
Contextual Info: CY54/74FCT821T CY54/74FCT823T CY54/74FCT825T 8Ć/9Ć/10ĆBit Bus Interface Registers D Features D Functional Description with clock enable EN and clear (CLR)Ċideal for parity bus interfacing in highĆperformance microprogrammed sysĆ tems. The FCT825T is an 8Ćbit buffered

Contextual Info: CY7C171 _CY7C172 CYPRESS ,.= ^ = SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed T he CY7C171 and CY7C172 are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 bits with separate I/O.

CY7C171-45VC

Abstract: 7C172-35 CY7C171-35PC CY7C171-45DMB A10C CY7C171 CY7C172 7C171-25 CY7C172-35PC 2272 aq
Contextual Info: 4 bE D • 23 3 *^ 2 QDOtSBB =5 E ICYP *0VH <O -V?<y& s? CYPRESS SEMICONDUCTOR CY7C171 CY7C172 4096 x 4 Static R/W RAM Separate I/O R eading th e device is accom plishedby tak­ ing chip enable CE LOW, while write en­ able (W E) remains H IG H . U nder these con­

7C261

Abstract: 7c264 CY7C261-35WC C2617 cerdip z PACKAGE CY7C263-35DMB CY7C261 CY7C263 CY7C264 7C261-45
Contextual Info: 1 CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected,

CERPACK K73

Abstract: 5962-9452201MXX 5962-8606320QXA cypress palce22v10 programming guide CY54FCT373CT CE22V1 cy27c256a-250wmb LCC 20.3 30MMA CY6116A-55DMB
Contextual Info: PALCE22V10 Flash Erasable, Reprogrammable CMOS PAL Device 5 ns tPD 181-MHz state machine Features • Low power — 90 mA max. commercial 10 ns — 130 mA max. commercial (5 ns) • CMOS Flash EPROM technology for electrical erasability and reprogrammability

l 9113

Contextual Info: CY54/74FCT821T CY54/74FCT823T CY54/74FCT825T V CYPRESS Features 8-/9-/10-Bit Bus Interface Registers • Sink current • Function, pinout and drive compatible with FCT, F, and Am29821/23/25 logic • FCT-C speed at 6.0 ns max. Com’l FCT-B speed at 7.5 ns max. (Com’l)

CY7C292A

Abstract: CY7C293A CY7C291A
Contextual Info: CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM D Features D D Windowed for reprogrammability D CMOS for optimum speed/power ic discharge High speed Ċ Ċ Functional Description The CY7C291A, CY7C292A, and CY7C293A are highĆperformance 2KĆ word by 8Ćbit CMOS PROMs. They are

CERAMIC LEADLESS CHIP CARRIER

Abstract: cerdip z PACKAGE DIODE SMD A6 cy7c291 CY7C293A-30QMB PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC w14 smd transistor CY7C291A CY7C292A CY7C293A
Contextual Info: 1CY 7C29 2A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an

6117a

Abstract: MA 6116A dc 6117a CY6116A-55DMB
Contextual Info: CY6116A CY6117A CYPRESS SEMICONDUCTOR Functional Description Features Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 20 ns Low active power — 550 mW 1 Low standby power — 110 mW TTL-compatible inputs and outputs Capable of withstanding greater

CY7C263-35jc

Abstract: IKN0803000 7C261 CY7C261-25QMB 7C264 CY7C261 CY7C263 CY7C264
Contextual Info: CY7C261 CY7C263/CY7C264 8K x 8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial The CY7C261, CY7C263, and CY7C264 are high-performance 8192-word by 8-bit CMOS PROMs. When deselected,

CY7C291A

Abstract: CY7C292A CY7C293A
Contextual Info: 92A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 20 ns commercial • • • • • • Functional Description The CY7C291A, CY7C292A, and CY7C293A are high-performance 2K-word by 8-bit CMOS PROMs. They are functionally

C2614

Abstract: CY7C264 7C261 7C264 CY7C261 CY7C263 C2612 C2611 C261-4 MIL-STD-1835C-4
Contextual Info: CY7C261 CY7C263/CY7C264 D Features PROMs 20 ns commercial Functional Description 25 ns (military) Low power 660 mW (commercial) 770 mW (military) Super low standby power (7C261) Less than 220 mW when deselected Fast access: 20 ns EPROM technology 100% programĆ

7C261

Abstract: 7c264
Contextual Info: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower

CY74FCT2646CTPC

Abstract: FCT646T
Contextual Info: CY54/74FCT2646T CY54/74FCT2648T 8ĆBit Registered Transceivers D Features D output logic levels Function and pinout compatible with D FCT and F logic D Fully compatible with TTL input and Sink current 12 mA Com'l , Source current 15 mA (Com'l), 12 mA (Mil)

CYPRESS 7C291A

Abstract: CY7C293AL-35PC cy7c291 CY7C291A-25WMB CY7C291A CY7C292A CY7C293A
Contextual Info: 92A CY7C291A CY7C292A/CY7C293A 2K x 8 Reprogrammable PROM Features identical, but are packaged in 300-mil 7C291A, 7C293A and 600-mil wide plastic and hermetic DIP packages (7C292A). The CY7C293A has an automatic power down feature which reduces the power consumption by over 70% when deselected. The 300-mil ceramic package may be equipped with an

7C261

Abstract: 7C261-25 C2612 CY7C263-45DC C2613 J-64 CY7C263-35DMB CY7C261 DIODE SMD W12 75 C261
Contextual Info: CYPRESS SEMIC ON DUC TOR MbE D BSfl^bbS □□Qb704 1 n C Y P CY7C261 CY7C263/CY7C264 CYPRESS SEMICONDUCTOR Features 8192 x 8 Power-Switched and Reprogrammable PROM • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power