L4 TOSHIBA Search Results

L44A

Abstract: marking L4 toshiba L4 toshiba marking code toshiba
Contextual Info: TOSHIBA U1DL44A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U 1 D L4 4 A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS = 200V Repetitive Peak Reverse Voltage V Average Forward Current I f (AV) = 1'° a Very Fast Reverse-Recovery Time

c9v diode

Abstract: 1SV101
Contextual Info: r? TOSHIBA {DI SCR ET E/O PTO } 9097250 TOSHIBA <DISCRETE/OPTO > « . * dF | TOTOSQ D O O ^ A 67C 09358 Silicon Epitaxial Planar T y p e ^ - T-ol~l4 D 1SV101 Variable Capacitance Diode FM RADIO BAND TUNING APPLICATIONS. Unit in min 4.2 MAX.

Contextual Info: 1DL41A T O SH IB A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 D L4 1A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage V r r m = 200V Average Forward Current IF(AV) = 1-0A (Ta = 64°C) V pru

TX4964

Abstract: TX4964FG-120 TX4964FG TX49 toshiba TOSHIBA TX4964FG BDE0095C EJTAG TX49
Contextual Info: TX49/L4 Core Product Specification Update Rev. 1.0 Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

tx4964

Abstract: TX4964FG-120 TX4964FG BDE0095C TX49 TOSHIBA TX4964FG
Contextual Info: TX49/L4 Core Product Specification Update Rev. 1.1 Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and

Contextual Info: TLP320-3,321 -3,521 -3 TLP523-3,525G-3,620-3 TLP621 -3,624-3,626-3 TLP627-3,628-3,629-3 12PIN DIP 3-CHANNELS TYPE 12PIN DIP 3CH Unit in mm SOLID STATE RELAY I / O MODULE DATA INTERFACE J1J 2U . J3f 'l L4 J5J U6 , THREE-PHASE MOTOR CONTROL The TOSHIBA 3 channels type series consist of 3 channels of 4

WPCT

Abstract: 41a1242 MX25L1605AM lenovo mx25l1605am2 toshiba c850 ICS9LPRS ru52 lenovo t42 bd4176
Contextual Info: March '18 Intel Merom NV/LV/ULV Processor 3,4 Clock Generator CK-505 18 AGTL+ FSB DDR2 533/667MHz Channel B 5 Bus Switch IC 54 L3:Signal 1 Project Code: 91.4B401.001 PCB Raw Card : 12.1'' XGA LCD L4:VCC L5:Signal 2 19 L6:Signal 3 Media Slice 47 CRT SELECTION

SOD87 footprint

Abstract: PowerDITM123 SOD-123FL MBR140SF MBR120VLSF powerdi 123 CRS08 Schottky Diode 40V sod87 Vishay Diode SOD-123 CRS06
Contextual Info: New Product Announcement July 14, 2004 Announcing a “NEW” Line of Surface Mount Schottky Barrier Rectifiers in the PowerDITM 123 Compact Power Package PowerDI 123 Dim D H A B C E L L4 Max Typ A 3.50 3.90 3.70 B 2.60 3.00 2.80 C 1.63 1.93 1.78 D 0.93

SLG8SP568V

Abstract: SCD1U10V2KX-4GP WISTRON power sequence WISTRON VT1311 TYCO-CONN52-GP mocha caramel w37 FET VCC1R05AUX
Contextual Info: JUL'07 Intel Penryn LV/ULV SFF Processor 3,4 Clock Generator MLF68 15 AGTL+ FSB DDR3 1067/800MHz 204-PIN DDR3 SODIMM Channel B MAX6622 5 Bus Switch IC 39 CRT I/F LVDS 12.1'' WXGA LCD 16 RGB CRT CRT SELECTION 17 L1:TOP L2:Signal 1 L3:GND L4:Signal 2 L5:VCC

VT1311

Abstract: 100KR1J-GP BD4176KVT VCC1R05AUX U57E SCD1U10V2KX mocha BD3550 tpc8032 bd4176
Contextual Info: May.08 Clock Generator MLF68 15 Intel Penryn SV Processor AGTL+ FSB DDR3 1067/800 204-PIN DDR3 SODIMM Channel B 5 Bus Switch IC 40 CRT I/F LVDS 12.1'' WXGA LCD 16 RGB CRT CRT SELECTION 17 L1:Component L2:GND L3:Signal 1 L4:VCC L5:Signal 2 L6:Signal 3 CRT Port

TX4964FG

Abstract: TX4964FG-120 TX4964 EJTAG TOSHIBA TX4964FG TX49 R4000 R4400 R5000 XFsz
Contextual Info: TX49/L4 コア搭載製品使用上の注意事項 Rev. 1.0 セミコンダクター社 ● 当社は品質信頼性の向上に努めておりますが、一般に半導体製品は誤作動したり故障 することがあります。当社半導体製品をご使用いただく場合は、半導体製品の誤作動や

TX4964

Abstract: TX4964FG-120 TOSHIBA TX4964FG TX4964FG TX49 R4000 R4400 R5000 XFsz
Contextual Info: TX49/L4 コア搭載製品使用上の注意事項 Rev. 1.1 セミコンダクター社 ● 当社は品質信頼性の向上に努めておりますが、一般に半導体製品は誤作動したり故障 することがあります。当社半導体製品をご使用いただく場合は、半導体製品の誤作動や

2SC994

Contextual Info: Tb TOSHIBA {DISCRETE/OPT0> 9097250 TOSHIBA DE t O ^ S S O CD I S C R E T E / O P T O bòC. 00D743D 5 | ~ 07430 D 2SC994 SILICO N NPN E P IT A X IA L PLAN AR TYP E Unit in nan VHF BAND POWER AMPLIFIER APPLICATIONS /2fa39MAX. ,08.4 5 MAX FEATURES : • Output Power !

2SK3074

Contextual Info: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P q = 630mW Gp^ 14.9dB 7j ^45 % M A X IM U M RATINGS Ta = 25°C)

Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

Contextual Info: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE d Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER 1.6MAX. 4.6MAX. 0.4 +0.05 • • • Output Power Power Gain Drain Efficiency PO^630mW GP^ 14.9dB V j = 45%

5948A

Abstract: 100L 2SC4245 marking L4 800mhz transistor MURATA TTA23A100
Contextual Info: T O S H IB A 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 Unit in mm TV TUNER, UHF MIXER APPLICATIONS. VHF-UHF BAND RF AMPLIFIER APPLICATIONS. 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage

MURATA GRM15

Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Fronted IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

Contextual Info: TOSHIBA 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF M IXER APPLICATIONS. V H F- U H F BAND RF AM PLIFIER APPLICATIONS. 2.1 ± 0.1 . ± 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

VHF TV BROADCAST TRANSMITTER

Abstract: 200 pF air variable capacitor variable capacitor trimmer Q TRIMMER capacitor 2SK131 2SK1310A L4 toshiba mica trimmer capacitor
Contextual Info: TOSHIBA 2SK1310A 2 S K 1 3 1 OA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power Po ^ 190 W Min. Drain Efficiency 7D = 65% (Typ.) f = 230 MHz Frequency Push - Pull Structure Package

l20pF

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.

SAFDA243MRD

Abstract: SAFDA243MRD9X00R00 9006 MCR01 TA4500F SAFDA243MRD9X00 SAFDA SAFDA243
Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

2SC898

Abstract: 2sc99 TIP 39c 2SC998 FCK 111 LA 4825 knitter 34 Toshiba 2SC998
Contextual Info: TOSHIBA 3T {DISCRETE/OPTO} 9097250 TOSHIBA <DI S C R E T E / O P T O 39C 0 I 8 7 L M È ii SEMICONDUCTOR t e c h n ic a l O DE I S O T T E S O DDDlfl?! E D U Z.Ì7V V *.* T O SH IB A T R A N S IS T O R 2 S09 9 8 SILICON NPN EPITAXIAL PLANAR data 1 5 0 ~ 1 7 5Miz * <SSE*SiU B )