L4 DIODE MARKING CODE Search Results

D1NL40

Abstract: diode D1nl40
Contextual Info: n - n x V 'C X -Y - Super Fast Recovery Diode Axial Diode O UTLINE D IM E N S IO N S D1NL40 Unit •mm Package I AX057 o 400V 0.9A hLO rn ±0.1 20MIN • trr5 0 n s • 5mm \d " j -20min -M - m «EPM f Marking L4 9D

AX057

Abstract: marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode
Contextual Info: Super Fast Recovery Diode Axial Diode Wtm D1 NL40 OUTLINE U nit-m m Package : AX057 W eight 0.19g Typ 400V 0.9A UJ Feature •ms'ix • Low Noise • trr= 5 0 n s • trr=50ns 02.6 -M - 0> Main Use • Switching Regulator • ÍM .0AJM 3 Marking Spec Code

transistor 600v

Abstract: 4n60f 4n60e 04n60 4N60 4N60 application note mosfet 4n60 4N60-E PT10M H04N60
Contextual Info: Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date :2010.10.14 Page No. : 1/6 HI-SINCERITY MICROELECTRONICS CORP. H04N60 Series H04N60 Series Pin Assignment Tab 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor 600V, 4A

STPS40170CG

Abstract: STPS40170CG-TR a2kk JESD97 STPS40170C STPS40170CT STPS40170CW l2f3
Contextual Info: STPS40170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 20 A VRRM 170 V Tj 175 °C VF(max) 0.75 V A1 K A2 K K FEATURES AND BENEFITS • ■ ■ ■ ■ ■ High junction temperature capability Low leakage current

Contextual Info: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness

4n60c

Abstract: 4N60 application note br 4n60 4N60 transistor 342 pf mosfet 4n60 4n60e 04N60C H04N60 H04N60E
Contextual Info: HI-SINCERITY Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2007.07.17 Page No. : 1/6 MICROELECTRONICS CORP. H04N60 Series H04N60 Series Pin Assignment Tab 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor 600V, 4A

DIODE MARKING CODE B3

Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:

Contextual Info: STTH30L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV Up to 2 x 20 A A1 VRRM 600 V A2 Tj 175°C VF (typ) 0.95 V trr (max) 55 ns K FEATURES AND BENEFITS • ■ ■ ■ A1 Ultrafast switching Low reverse current

Contextual Info: STPS30170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 15 A A1 VRRM 170 V A2 Tj 175 °C VF(max) 0.75 V K A2 K FEATURES AND BENEFITS • High junction temperature capability ■ Low leakage current ■ Good trade off between leakage current and

smd diode L43

Abstract: smd diode L44 l44 smd marking code smd diode code l4 smd diode L42 DIODE marking L4 marking L44 SOT23 L43 SMD SMD DIODE L4 L43 DIODE
Contextual Info: Spec. No. : C302N3-H Issued Date : 2003.04.14 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package.

STTH30L06

Abstract: STTH30L06C STTH30L06CG STTH30L06CG-TR STTH30L06CT STTH30L06CW
Contextual Info: STTH30L06C TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF AV Up to 2 x 20 A A1 VRRM 600 V A2 Tj 175°C VF (typ) 0.95 V trr (max) 55 ns K FEATURES AND BENEFITS • ■ ■ ■ A1 Ultrafast switching Low reverse current

A2 DIODE SMD CODE MARKING

Abstract: smd diode marking code a2 S3 marking DIODE smd diode code s3 A2 SMD CODE MARKING marking code e1 smd smd diode code l4 marking K2 diode smd schottky diode s3 - 13 DIODE smd marking A1
Contextual Info: Spec. No. : C302S3-H Issued Date : 2004.04.13 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Small Signal Schottky double diodes BAT54S3/BAT54AS3 BAT54CS3/BAT54SS3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-323 very small plastic SMD package.

l4 marking code diode

Abstract: diode MARKING b3 DIODE 504
Contextual Info: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number DSS6-0025BS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf

STPS30170CW

Abstract: STPS30170C STPS30170 JESD97 STPS30170CFP STPS30170CG STPS30170CG-TR STPS30170CT 935 schottky diode
Contextual Info: STPS30170C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 15 A A1 VRRM 170 V A2 Tj 175 °C VF(max) 0.75 V K A2 A2 K FEATURES AND BENEFITS • High junction temperature capability ■ Low leakage current ■ Good trade off between leakage current and

Contextual Info: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω

Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

Contextual Info: STF40N60M2, STFI40N60M2, STFW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.088 Ω 34 A STF40N60M2

11NM50N

Abstract: STD11NM50N STP11NM50N STF11NM50N std11nm50 11nm50 STF11NM50N st STD11N
Contextual Info: STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 Ω, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220 Features Order codes VDSS @TJmax RDS on max ID 3 1 STD11NM50N STF11NM50N STP11NM50N 3 550 V < 0.47 Ω 8.5 A DPAK 1 2 TO-220 • 100% avalanche tested

stps20s100ct

Abstract: STPS20S100CFP diode marking H2 STPS20S100C STPS20S100CR TO-220FPAB package
Contextual Info: STPS20S100C POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF AV 2 x 10 A VRRM 100 V Tj 175°C VF(max) 0.71 V A1 K A2 FEATURES AND BENEFITS • ■ ■ ■ High junction temperature capability for converters located in confined enrironment

Contextual Info: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current

6P060AS

Contextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

6-015AS

Contextual Info: DSS6-015AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 150 V 6A 0.62 V Part number DSS6-015AS 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses

Contextual Info: EML4 / UML4N Transistors General purpose transistor isolated transistor and diode EML4 / UML4N 2SC5585 and RB521S-30 are housed independently in a EMT5 or UMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver EMT5 1.6 0.5 1.0 0.5 0.5