L3 V Search Results

SY68730ZC

Abstract: MIC29302BT SY68730 sy10s897 0343a KS8721BL Unisem tsmc cmos tsmc cmos 0.35 KSZ8695PX
Contextual Info: Autoclave Pressure Pot Test + 121C / 15 PSIG (With Pre-con 3X Reflow ) MSL Pkg Lds Device D/C Process Qty Hours Rej Assembler L3 L3 L3 L3 BGA BGA BGA BGA 289 289 289 289 KS8695PX KS8695PX KS8695PX KSZ8695PX 0407 0421A 0417A 0452A TSMC .18 TSMC .18 TSMC .18

SC9822P

Abstract: msc80
Contextual Info: SC9822P ESP CD MP3 SC9822P Mp3 CD DISC-MAN * MP3 CD-ROM ECC EDC LQFP-64-10x10-0.5 * ISO/IEC 11172-3 L3 L2 L1 * ISO/IEC 13818-3 L3 L2 L1 * ISO/IEC 11172-3 L3 L2 L1 MP3 * ISO/IEC 13818-3 L3 L2 L1 MP3 * MP3 48K/44.1K/32K 24K/22.05K/16K * / / 12K/11.025/8K SC9822P

SC9820P

Contextual Info: SC9820P CD MP3 SC9820P Mp3 CD * DISC-MAN CD-ROM ECC MP3 EDC LQFP-64-10x10-0.5 * ISO/IEC 11172-3 L3 L2 L1 * ISO/IEC 13818-3 L3 L2 L1 * ISO/IEC 11172-3 L3 L2 L1 MP3 * ISO/IEC 13818-3 L3 L2 L1 MP3 * MP3 48K/44.1K/32K 24K/22.05K/16K * / / 12K/11.025/8K SC9820P

smd diode g6

Abstract: marking G3 IF110 GMM3x60-015X1
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

DIODE marking S6 57

Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

Diode smd s6 95

Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

DIODE S6 marking code

Abstract: smd diode g6 Diode smd s6 95 marking G3 3x100-01X1 smd diode code S5
Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

75WX100GD

Contextual Info: GMM 3x100-01X1 Three phase full Bridge VDSS = 100 V = 90 A ID25 RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

50904

Contextual Info: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Symbol

Contextual Info: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V =1 50 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 S4 S6 G2 S2 L1- L3+ L3 L2- L3- Applications Symbol Conditions Maximum Ratings

Contextual Info: GMM3x60-015X2 VDSS = 150 V = 50 A ID25 RDSon typ. = 19 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary Data L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 S4 S6 L1- L2- L3+ L3 L3- Applications MOSFETs Symbol Conditions

smd diode g6

Abstract: 3x120-0075X2 marking G3
Contextual Info: GMM 3x120-0075X2 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings

diode marking L3

Abstract: marking L2 diode smd diode S6 DIODE S4 53 marking G5 MOSFET SMD mosfet MARKING code TC smd diode g6 smd diode mj 19 S3 marking DIODE IF110
Contextual Info: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings

IXYS GMM 3x160-0055X2

Abstract: marking G3 smd diode g6 3x160-0055X2
Contextual Info: GMM 3x160-0055X2 Three phase full Bridge VDSS = 55 V = 150 A ID25 RDSon typ. = 2.2 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings

GMM 3x180-004x2

Abstract: smd diode g6 smd diode g6 DIODE S4 39 smd diode DIODE smd marking l3 IF110
Contextual Info: GMM 3x180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications Symbol Conditions Maximum Ratings

diagram of 3 phase relay

Contextual Info: FUNCTION DIAGRAM DIAGRAMMEDE FONCTION FUNKTIONSDIAGRAM CONNECTION DIAGRAM DIAGRAMME DE CONNECTION SCHALTBILDANSCHLUSS DIMENSIONS DIMENSIONS ABMESSUNGEN L1 (L2) (L3) R Y B N R(L1) 40 Monitored supply Y(L2) B(L3) B(L3) Y(L2) The relay is shown in the de-energised

Contextual Info: QLUM3308-PT280C Device Datasheet • • • • • • Utopia Level 3 Master Bridges 1.0 Utopia Level 3 L3 Bridge Core Features • Implements two Utopia L3 Masters providing a solution to bridge Utopia Slave devices • Compliant with ATM-Forum af-phy-0136.000 (Utopia L3)

Contextual Info: QLUM3309-PT280C Device Datasheet • • • • • • Utopia Level 3 Master Bridges 1.0 Utopia Level 3 L3 Bridge Core Features • Implements two Utopia L3 Masters providing a solution to bridge Utopia Slave devices • Compliant with ATM-Forum af-phy-0136.000 (Utopia L3)

diode 1334

Abstract: OL3492N OL3497N OL391N OL392N OL397N
Contextual Info: E2V0026-37-X1 O K I electronic components O L3 9 1 N , O L3 9 2 N , O L3 9 7 N , O L 3 4 9 2 N , O L3 4 9 7 N _ Hight Temperature Operation 1.3 jim Laser-Diode Coaxial Module GENERAL DESCRIPTION The OL391N, OL392N, OL397N, OL3492N, and OL3497N are 1.3.11m, M Q W InG aA sP /In P laser

Contextual Info: QLUM3333-PT280C Device Datasheet • • • • • • Utopia Level 3 Master/Master Bridge 1.0 Utopia Level 3 L3 Bridge Features • Implements two Utopia L3 Masters providing a solution to bridge Utopia Slave devices • Compliant with ATM-Forum af-phy-0136.000 (Utopia L3)

FLASHTRAB compact

Abstract: VAL-CP-350-ST flt-cp-350-st FLT-CP-PLUS-350-ST IEC 61643-1
Contextual Info: FLT-CP.ST / VAL-CP.ST Installation Instructions green - gn FLT-CP-N/PE-350-ST FLT-CP-PLUS-350-ST ⇒ ok FLT-CP-350-ST red - rd ⇒ defect FLASHTRAB compact L3 L2 L2 VAL-CP-N/PE-.-ST FLASHTRAB compact L3 VAL-CP-350/VF-ST VAL-CP-.-ST L2 L3 L2 Codierung / coding VAL-CP.ST

Contextual Info: QLUM3332-PT280C Device Datasheet • • • • • • Utopia Level 3 Master/Master Bridge 1.0 Utopia Level 3 L3 Bridge Features • Implements two Utopia L3 Masters providing a solution to bridge Utopia Slave devices • Compliant with ATM-Forum af-phy-0136.000 (Utopia L3)

Contextual Info: QLUS3309-PQ208C Device Data Sheet • • • • • • Utopia Level 3 Slave Bridges 1.0 Utopia Level 3 L3 Bridge Core Features • Implements two Utopia L3 Slaves providing a solution to bridge Utopia Master devices • Compliant with ATM-Forum af-phy-0136.000 (Utopia L3)

Contextual Info: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only RECTANGLE TYPE LED LAMPS Pb Lead-Free Parts LY55540/L3-PF DATA SHEET DOC. NO : QW0905- LY55540/L3-PF REV. : A DATE : 28 - Sep. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LY55540/L3-PF