L21 SMD Search Results

smd diode marking A7 SOT-23

Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
Contextual Info: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad

SMD diode C5C

Abstract: smd diode A82 SMD diode Ca6 SMD diode CA2 dual diode 1N4148 SMD smd diode 1N4148 sot23 1N4148 diode SOD 80 1n4148 smd diode 1N4148 diode SMD type smd diode marking code L51
Contextual Info: SMD Switching Diodes TYPE NO. CASE DESCRIPTION BAS28 BAS 56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CM PD914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-8O SOD-80 SOD-8O SOD-8O SOD-8O SOT-23 SOT-23 SOT-23 CMPD1001S CMPD20Û3 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23

L21 SMD

Abstract: smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1
Contextual Info: Diodes SMD Type General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: Product specification KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 1.Base 2.Emitter 3.collector

Contextual Info: file: A-36C.doc Ltp:tft037 version 1.0 VI TELEFILTER Application Note 30.06.2000. TFS 36C - 1/2 1. General The filter is driven in an unbalanced way. It is matched to 50 Ω The matching element values given below are theoretical calculations based on measured values for

BAS29

Abstract: BAS31 BAS35 smd L21
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.

Contextual Info: Philips Semiconductors Product specification General purpose controlled avalanche double diodes_ FEATURES BAS29; BAS31; BAS35 PINNING • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage:

SMD CAPACITOR L29

Abstract: Philips 2222-581 SMD CAPACITOR L27 BLV897 Philips capacitor 166 ferroxcube 4322
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 FEATURES PINNING - SOT324B

BLF2048

Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR PHILIPS MKT 373 MGT007 w3 smd transistor MGT014 MGT012
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification Supersedes data of 1999 Dec 01 2000 Feb 17 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor FEATURES BLF2048

SMD L81

Abstract: l8124 BY5000
Contextual Info: 23/03/2000 10:2= PADE HYBRICO 47383777 POWER Radial / SM P series 04/05 RESISTORS D iplohm atic model no.: 001 P01 S1G S1J Max. power, 70 5C 3W 2W 2W 2W R esistance range R0047-R33 1R 0 - 1M0 1R 0 - 1MO 1 R 0 - 1M0 ¿ ,u o m & s a *A l* l Body dim ensions

AT27280

Abstract: variable capacitor ceramic 25pF AT 0340 TEMEX LM7805 05 LM7805 smd 8 pin SMD CAPACITOR L27 smd transistor marking l6 LM7805 PTFA212002E SMD TRANSISTOR MARKING 904
Contextual Info: PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110 – 2170 MHz Description The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and

smd code marking A8 diode

Abstract: smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35

SMD4148

Abstract: mmbd2836 m11vp MMB07000 MMBD1402 JS29 dfig SOT-23 marking a8 BAS21 MMBD1403
Contextual Info: JGD c:> MM4148/LS4148 SURFACE MOUNT SWITCHING DIODES Absolute Maximum Ratings vR Value 75 V rm 100 Unit V V lo 150 mA Symbol Reverse Voltage Peak Reverse Voltage Rectified Current Average Half Wave Rectification with Resistive Lefadat Tamb = 25iC and f^50Hz

Contextual Info: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

BAS29

Abstract: BAS31 BAS35 MBG440
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors

SMD MARKING CODE L33

Abstract: 6034t Application Note ISDB-T Tuner with 6034T marking bb varactor diode sod marking code CB SMD tr2 LQG21NR Analog VHF tuner module TUA6034T L17 marking SOD SOD marking L17
Contextual Info: Wireless Components Application Note of ISDB-T Tuner with TUA 6034T Version 1 Applications of IC TUA6034T : Specially Suitable for Digital Broadcasting Standards like DVB-T, DVB-C, ISDB-T, ATSC, etc. SMS M AE DS 2003-07-01 July 01, 2003 Overview of the ISDB-T Tuner

capicitor

Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
Contextual Info: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride

67144210

Abstract: Schott 67144160 L37 smd Schott 67144110 schott 67144170 L33 SMD 67143920 67144250 smd L27 67144130
Contextual Info: Thru Hole Devices LM259x/LM267x • • • • • • • Ideal for robust applications. Low EMI/Self shielded design. Wide operating temperature range. Low DCR for cool operation. Designed for low ripple. Stable inductance over varying loads. Recommended by National Semiconductor for use

MT29C1G12

Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
Contextual Info: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package

mhb576

Abstract: composite to rgb converter ic 79lc block diagram of black and white t.v SAA7111 SAA7711 QFP44 SAA7112 SAA7128H SAA7129H
Contextual Info: Philips Semiconductors Product specification SAA7128H; SAA7129H Digital video encoder CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 ORDERING INFORMATION 4 QUICK REFERENCE DATA 5 BLOCK DIAGRAM 6 PINNING 7 FUNCTIONAL DESCRIPTION 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8

ferroxcube 4322

Abstract: PRC201 SMD CAPACITOR L27 BLV2048 smd L17 npn
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D374 BLV2048 UHF push-pull power transistor Preliminary specification 1999 Apr 23 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 PINNING - SOT494A FEATURES • Emitter ballasting resistors for optimum temperature

rogers 4003 characteristics

Contextual Info: PTF 102003 LDMOS RF Power Field Effect Transistor 120 Watts, 2110–2170 MHz Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P–1dB and 14 dB linear gain. Full gold

circuit diagram electronic choke for tube light

Abstract: C18 ph zener PG-DSO-18-2 12v dc to 220 ac INVERTER without transformer ballast design equation for 54w tube ICB1FL03G DIODE ZENER smd marking 72 EFD25/13/9 ballast circuit diagram for 54w tube capacitor 220nF 1kV
Contextual Info: Preliminary Datasheet Version 1.02, March 2009 ICB1FL03G Smart Ballast Control IC for Fluorescent Lamp Ballasts Industrial & Multimarket ICB1FL03G Revision History: 2009-03 Previous Version: V 1.01 Page V 1.02 Subjects major changes since last revision Edition 2009-03