| BAS29 |  | Continental Device India | Silicon Planar Epitaxial High Speed Diode | Original | PDF | 45.59KB | 2 | 
| BAS29 |  | Fairchild Semiconductor | High Voltage General Purpose Diode | Original | PDF | 580.09KB | 6 | 
| BAS29 |  | Fairchild Semiconductor | Small Signal Diode | Original | PDF | 54.1KB | 2 | 
| BAS29 |  | Kexin | General Purpose Controlled Avalanche Diodes | Original | PDF | 77.55KB | 4 | 
| BAS29 |  | NXP Semiconductors | BAS29 - General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: single ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@IF=200mA mV; VR max: 90 V | Original | PDF | 76.76KB | 9 | 
| BAS29 |  | Philips Semiconductors | General purpose controlled avalanche (double) diodes | Original | PDF | 76.43KB | 12 | 
| BAS29 |  | Philips Semiconductors | Silicon Planar Epitaxial High-Speed Diode | Original | PDF | 49.46KB | 2 | 
| BAS29 |  | RFE International | Rectifier Diode, Switching Diode, Single, 120 MinV, SOT-23, 3-Pin | Original | PDF | 96.07KB | 1 | 
| BAS29 |  | Transys Electronics | SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE | Original | PDF | 48.65KB | 2 | 
| BAS29 |  | TY Semiconductor | TY Equivalent - General Purpose Controlled Avalanche Diodes - SOT-23 | Original | PDF | 221.05KB | 4 | 
| BAS29 |  | Continental Device India | SOT-23 Transistors & Diodes Data Book 1995 | Scan | PDF | 48.81KB | 2 | 
| BAS29 |  | Jinan Gude Electronic Device | SURFACE MOUNT SWITCHING DIODES | Scan | PDF | 99.37KB | 1 | 
| BAS29 |  | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | PDF | 83.45KB | 1 | 
| BAS29 |  | National Semiconductor | Pro Electron Surface Mount Diodes | Scan | PDF | 20.48KB | 1 | 
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| BAS29 |  | National Semiconductor | Diode Pro Electron Series | Scan | PDF | 40.04KB | 2 | 
| BAS29 |  | National Semiconductor | Silicon Single Junction Diodes | Scan | PDF | 85.34KB | 1 | 
| BAS29 |  | National Semiconductor | Diode - Pro Electron Series | Scan | PDF | 39.61KB | 2 | 
| BAS29,215 |  | NXP Semiconductors | General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: single ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax: 1@IF=200mA mV; VR max: 90 V; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | PDF | 76.87KB | 9 | 
| BAS299-7 |  | Diodes Incorporated | FAST SWITCHING DIODE SOT23 | Original | PDF | 217.89KB |  | 
| BAS29_D87Z |  | Fairchild Semiconductor | General Purpose High Voltage Diode; Package: SOT-23; No of Pins: 3; Container: Tape & Reel | Original | PDF | 54.09KB | 2 |