L21 DIODE Search Results

Contextual Info: BAS29, BAS31, BAS35 Il SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS2&- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 0.46 w -H

Contextual Info: 83633^4 DDDD718 7b4 • BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22

BAS29

Abstract: BAS31 BAS35 l21 diode marking
Contextual Info: BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B AS29- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 0.48 0.38

BAS29

Abstract: BAS31 BAS35 diode 7B4
Contextual Info: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21

BAS31

Abstract: BAV19 259-C
Contextual Info: BAS31 e? Diserete POWER & Sign al Technologies National Semiconductor“ BAS31 CONNECTION DIAGRAM JH L21 TD— ET SOT-23 High Voltage General Purpose Diode Sourced 'from P rocess 1H. S e e B A V 1 9 / 2 0 / 2 1 for characteristics. Absolute Maximum Ratings*

BAS31

Abstract: BAV19
Contextual Info: BAS31 BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 SOT-23 1 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage

philips twin eye

Abstract: SOT242 diiode philips "twin eye" laser diode philips
Contextual Info: Philips Components D E V E L O P M E N T DATA CQL21/D This data sheet contains advance information and specifications which are subject to change without notice. SMALL SIZE DOUBLE HETEROSTRUCTURE AIGaAs LASER G E N E R A L D E S C R IP T IO N The C Q L21/D is designed for reading applications such as video/audio disc applications, optical

MARKING CODE l22

Abstract: l21 code diode marking r5 l21 diode l21 diode marking CODE L22 diode marking ja CMPD1001 Marking code TM SOT23-6 CMPD1001S
Contextual Info: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for

L21 marking code

Contextual Info: CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications

l21 diode

Abstract: l21 diode marking MARKING CODE l22 marking code 35 CODE L22 marking code diode CMPD1001 CMPD1001A CMPD1001S marking code
Contextual Info: CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications

smd diode marking A7 SOT-23

Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
Contextual Info: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad

Contextual Info: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring

L21 marking code

Abstract: CMPD1001S CMPD1001 CMPD1001A marking c2 diode
Contextual Info: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring

LF MARKING CODE

Contextual Info: Central CMPD1001 CMPD1001A CMPD1001S TM Sem i c o n d u c t o r C o r p . HIGH CURRENT SW ITCHING DIODE DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring

NDL5004

Contextual Info: E C ELECTRONICS INC =iô] D • L.M27525 001ÔS0S E ■ -p_ Introduction We live in an age of information. This information is in the form of voice conversations, music, TV pictures, digital data, recorded messages—the list goes on and on. And as the amount of information increases, a transmission

IN5969

Abstract: IN5968 IN596
Contextual Info: • AVAILABLE IN JAN, JANTX, PER MIL-PRF-19500/356 1N6632 THRU 1N6637 AND 1N5968 AND 1N5969 JANTXV, AND JANS • 5 WATT ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

1N5966

Abstract: IN5969 IN5968
Contextual Info: 1N6632 THRU 1N6637 AND 1N5968 AND 1N5969 • AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/356 •5 WATT ZENER DIODES • NON CAVITY CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

Contextual Info: _ A_ BAS29 BAS31 BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope. The BAS29 consists of a single diode. The BAS31 has two diodes in series and the BAS35 has two

diode marking e8

Abstract: l21 code BAS31 Diode Marking 016 l21 diode
Contextual Info: BAS31 Dual In-Series General-Purpose Controlled-Avalanche Diode TO-236AB SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) t c u d o r P w e N Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) Top View 0.079 (2.0) .056 (1.43) .052 (1.33) 3 1 0.035 (0.9) Dimensions in inches

L21 SMD

Abstract: smd L21 KAS31 JTp smd diode smd diode 1301 L20 SMD bas35 l21 diode marking TP50S smd diode marking t1
Contextual Info: Diodes SMD Type General Purpose Controlled Avalanche Diodes KAS29/KAS31/KAS35 BAS29/BAS31/BAS35 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 General application +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

Contextual Info: S Q .I.P . 3 2 * » « S ! yv Square In-line Package Bridge Diode (In p u t/O u tp u t In -lin e P a c k a g e ) • Ii£l21 O U T L IN E D IM E N S IO N S S20WBD 6 0 0 V 20A Unit ! mm ■ fcfem R A T IN G S A bsolute Maximum R atings Jl -* J>h

Contextual Info: • bbSS'Dl 0 0 5 4 5 6 2 4flfl N AMER PHILIPS/DISCRETE BAS29 BAS31 BAS35 IAPX b7E 3 _ / v _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope.

5d surface mount diode

Abstract: JS29 bas16 cross reference DL4148 DL4148 package MMBD1702 RFE International BAS21 DL4448 LL4148
Contextual Info: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package