DIIODE Search Results

Contextual Info: SDS152K K SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Sin ngle genera al-purpose switching s diiodes, fabriccated in pla anar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.

smd marking ks

Abstract: smd diode marking 5d U SDS152K smd diode sot-323 marking code k smd diod fast pulse diod
Contextual Info: SDS152K K SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Sin ngle genera al-purpose switching s diiodes, fabriccated in pla anar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.

very low leakage tvs

Abstract: "very low leakage" tvs TVS VISHAY current rating TVS
Contextual Info: Application Note Vishay General Semiconductor Series Stacking of TVS for Higher Voltages and Power HIGHER POWER By Bruce Hartwig Senior Automotive Applications Engineer HIGHER VOLTAGES In normal operation, a transient voltage suppressor should be invisible to the protected circuit. This is guaranteed by a

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

Contextual Info: FQP11P06 P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

BZX75C1V4

Abstract: SAA3004
Contextual Info: D E V E LO P M E N T SAMPLE D A T A SAA3004 T h is in fo r m a tio n is d e riv e d fr o m d e v e lo p m e n t sam ples m ad e a v a ila b le f o r e v a lu a tio n , I t does n o t necessanty im p ly th a t th e d e v ic e w ill go in to regular p r o d u c tio n ,

TRANSISTOR SMD MARKING CODE 1BW

Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: FQD4P40 P-Channel QFET MOSFET -400 V, -2.7 A, 3.1 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

Contextual Info: FQP12P10 P-Channel QFET MOSFET -100 V, -11.5 A, 290 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

Contextual Info: FDB024N04AL7 N-Channel PowerTrench MOSFET 40 V, 219 A, 2.4 mΩ Features Description • RDS on = 2.0 m Ω (Typ.)@ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor ’s advance PowerTrench ® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Contextual Info: FQT2P25 P-Channel QFET MOSFET -250 V, -0.55 A, 4.0 Ω Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance,

Contextual Info: FDP2710 N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has

Contextual Info: FQB9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

Contextual Info: FDB016N04AL7 N-Channel PowerTrench MOSFET 40 V, 306 A, 1.6 mW Features Description • RDS on = 1.16 mW (Typ.) @ VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Contextual Info: PARAL P LLELING TU425 T 5-SER RIES P POWE ER APPLICATION NOTE SUPPLIE ES FO OR LO OAD S SHAR RING Purpo ose: This app plication note provides in nformation concerning paarallel operaation of the SLPE TU425-‐SERIES series power suppliees. Parallel operation offeers the abilityy to have red

QRS0680T30

Abstract: DIODE ED 26
Contextual Info: QRS0680T30 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 www.pwrx.com Fast Recovery Diode Module 724 925-7272 Description: Powerex Fast Recovery Diode Modules are designed for use in applications requiring fast switching. The modules are isolated for easy

Contextual Info: FDB2710 N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS on = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

ad9958 Application

Abstract: 500MSPS AD9958 AD9959 HIGH accurate ANALOG MULTIPLIER HIGH SPEED ANALOG MULTIPLIER AOTF human radar detection
Contextual Info: DUAL Channel 500MSPS DDS with 10-bit DACs AD9958 Preliminary Technical Data FEATURES Software/Hardware controlled power-down Dual supply operation 1.8 V DDS core / 3.3 V serial I/O Built-in synchronization for multiple devices Selectable REF CLK multipier(PLL) 4x to 20x (bypassable)

Fairchild Semiconductor DS-513

Contextual Info: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining

ZHCS1006TA

Abstract: bat54ata
Contextual Info: PCN-1122 PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: November 30, 2008 January 01, 2009 Schottky Diodes Additional wafer manufacturing location PCN #: 1122 TITLE Introduction of additional wafer manufacturing location DFT for Zetex schottky diodes