L18V Search Results

Contextual Info: L18V8-30M, L18V8 25C ADVANCED EPICm CMOS GENERIC M i D 3 0 8 7 . DECEMBER 1 9 8 7 • 20-Pin Advanced C M OS Generic PAL •

Contextual Info: LATTICE SEMICONDUCTOR bflE » Lattice S3flbE14t1 □ 0 Q 2 7 ß ci 70S « L A T L18V10 High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL B LO C K DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOG Y — 15 ns Maxim um Propagation Delay

22v10 gal

Abstract: GAL22V10G
Contextual Info: Lattice Semiconductor GAL22V10 Family G A L I S V IO G AL22V10 Corporation FE A TU R E S • HIGH PERFORMANCE E’ CMOS* TECHNOLOGY — 15 ns Maximum Propagation Delay — Fmax = 50 MHz — TTL Compatible 8 -1 6 mA Outputs — UltraMOS III Advanced CMOS Technology

Contextual Info: L18V10 Lattica High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES HIGH PERFORMANCE E2CMOS TECHNOLOGY — 7.5 ns Maximum Propagation Delay — Fmax =111 MHz — 5.5 ns Maximum from Clock Input to Data Output

JS28F256P30

Abstract: 11K33 j3003 4AG22 5B19 c225 HDR 2x5 J3009 12W8 2ae12
Contextual Info: 4 3 PAGE 6 PAGE 3 System Monitor Aux System Monitor 2 PAGE 2 System Ace Upstream PAGE 2 Upstream Connector 1 PAGE 5 Single Ended Socket Clocks 2X PAGE 5 Differential SMA Clocks 2X D D PAGE 16 Power Bus and Switches 5V OR 5V JACK BRICK PAGE 2 Switches User Reset

Contextual Info: Lattice L18V10 High Performance E2CMOS PLD Generic Array Logic J Semiconductor ! •■■Corporation FUNCTIO N AL B LO C K DIAGRAM FEATURES ■ HIGH PERFORMANCE E2CMOS TECHNOLOG Y — 7.5 ns Maximum Propagation Delay — Fmax = 1 0 5 MHz — 5.5 ns Maximum from Clock Input to Data Output

Pal18v8

Abstract: 18v8 Pal programming PAL output logic 18p8 PAL VIHH programming pulse 11ax 10L8 12L6 16L2
Contextual Info: L18V8-30M, L18V8-25C ADVANCED EPIC CMOS GENERIC PAL D 30 8 7 , DECEMBER 1987 • 20-P in A dvanced CMOS Generic PAL • V irtu a lly Zero S tandby Power J L PAC KA G E TOP VIEW • 25 -ns M a xim um P ropagation Delay • E ight O u tp u t Logic M acrocells

BSM150GB100D

Abstract: bsm 256
Contextual Info: SIEMENS BSM150GB100D BSM 150 GAL 100 D IGBT Module P re lim in a ry D a ta VCE = 1000 V / c = 2 x 2 0 0 A at Tc = 25 C l c = 2 x 1 5 0 A at fc = 80 C • Power module • Half-bridge/Chopper • Including fast free-wheel diodes • Package with insulated metal base plate