L-C CALCULATOR Search Results

Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

J1103

Abstract: J294 MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966
Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: MRF6P21190HR6 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF5S21130H

Abstract: 465B AN1955 MRF5S21130HR3 MRF5S21130HSR3
Contextual Info: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

J9-32

Abstract: J973 465B A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 mrf6s21140hs
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 4, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

465B

Abstract: A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF5S21130H

Contextual Info: Freescale Semiconductor Technical Data MRF5S21130H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21130HR3 MRF5S21130HSR3 Designed for W - CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

T491C105K0

Abstract: mcr63v470m8x11 MRF6S19120H
Contextual Info: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

465B

Abstract: A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3
Contextual Info: Freescale Semiconductor Technical Data MRF6S21140H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

th 2190

Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
Contextual Info: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF6S19120H

Contextual Info: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

mrf5s21090

Contextual Info: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF6S19060N

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1 AD250
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S19100H MRF6S19100HR3 MRF6S19100HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

5082-7441

Abstract: hp 5082-7441 Display hp 5082 7441 Display hp 5082 5082-7449 decoder 7448 hp 8 segment display hp 7 segment display 5082-7440 Hewlett Packard 5082-7441
Contextual Info: SPECIAL PARTS FOR CALCULATORS H E W L E T T jjy ji P A C KA R D C OM PONENTS 5082-7440 SERIES T E C H N I C A L D A T A A P R IL 1 9 7 6 Features • MOS CO M PATIBLE Can be driven directly from M OS circuits. • LOW POWER Excellent readability at only 250pA

MCK 240 Motion Control Kit DEMO

Abstract: RTDX simulink example DSP BASED ONLINE UPS design tms320vC5402 starter kit usb microphone block diagram mp3 player pic based PMC-FPDP COTS high-accuracy clock sources pioneer stack audio power amplifiers pwm simulink matlab 3 phase
Contextual Info: JANUARY 2000 T H E W O R L D L E A D E R I N D S P inside Free A N D A N A L O G VOL. 2 • JANUARY 2000 N E W T E C H N I C A L I N F O R M A T I O N O N T I ’ S D S P, A N A L O G A N D L O G I C D E V I C E S ‘Analog Applications’ journal Advanced DSP technology roadmap

si3005

Abstract: Si3052 Si3019 Si3050 Silabs si3018 Si3019 Application Note AN67 EN132400 Si305x
Contextual Info: Si3050 G L O B A L VO I C E DAA FREQUENTLY ASKED QUESTIONS Rev. 0.1 8/07 Copyright 2007 by Silicon Laboratories Si3050 FAQ 2 Rev. 0.1 S i 3 0 5 0 FA Q S i 3 0 5 0 G L O B A L VO I C E D A A — F R E Q U E N T L Y ASKED QUESTIONS Table of Contents Layout

Contextual Info: U LT R A - L O W J I T T E R I N - S Y S T E M P R O G R A M M A B L E D I F F E R E N T I A L C L O C K D E V I C E S ispClock5400D Integrates Zero-Delay and Fan-Out Buffers with Dynamic Skew Adjustment Through I2C The ispClock 5406D and ispClock5410D are in-systemprogrammable differential clock distribution ICs designed

Contextual Info: KODENSHI CORP 25E D mmmm • 5242bOA DQDQ32S T U/ \ A-o/~ as- S O L A R C E L L S \LOW ILLUMINATION TYPE/ flU tttfiS i < s 7 t$ 7 L h tV .m $ -* W M Z itz> Z t t 'X ' t DIMENSIONS (Unit: mm i t . SSC-8-85L KODENSHI,S Solar Cells for calculators are small in size but

Contextual Info: >»ENSHI CORP ' 25E D • 5242b0fl 0000323 S ft-oi- -xsr S O L A R C E L L S \L O W ILLUM INATIO N T Y P E / P R ''jgp^Ltgr'Jg-^'ga T&>- - ■.if-'- HB-t flP 1 4 * <» < » i t s DIMENSIONS Unit: mm if . KODENSHI’S Solar Cells for calculators are small in size but