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100B4R7CW Datasheets (2)

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American Technical Ceramics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
100B4R7CW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 4.7PF 500V P90 1111	Original	PDF	908.54KB
100B4R7CW500XT1K		American Technical Ceramics	Ceramic Capacitor 4.7PF 500V P90 1111	Original	PDF	875.17KB

100B4R7CW Price and Stock

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Kyocera AVX Components


Kyocera AVX Components 100B4R7CW500C100 MLC A/B/R - Waffle Pack (Alt: 100B4R7CW500C100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B4R7CW500C100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B4R7CW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B4R7CW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B4R7CW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 $4.32 1000 $4.32 10000 $4.32	Buy Now
Richardson RFPD	100B4R7CW500XC100				200	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B4R7CW1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B4R7CW1500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B4R7CW1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 $4.32 10000 $4.32	Buy Now
TTI	100B4R7CW1500XT	Reel	2,500		500	1 - 10 - 100 - 1000 $3.65 10000 $3.65	Buy Now
Kyocera AVX Components 100B4R7CW500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B4R7CW500XT1K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B4R7CW500XT1K	Tape w/Leader		16 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B4R7CW500XT SMD Multilayer Ceramic Capacitor, 4.7 pF, 500 V, 1111 [2828 Metric], ? 0.25pF, 100B Series, 2.8 mm - Custom Tape W/Leader (Alt: 100B4R7CW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B4R7CW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 $4.32 10000 $4.32	Buy Now
TTI	100B4R7CW500XT	Reel			500	1 - 10 - 100 - 1000 $4.50 10000 $4.50	Buy Now
Avnet Asia	100B4R7CW500XT			18 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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100B4R7CW Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MRF6S21060N Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110	Original	mrf6s21060n mrf6s21060nr1 mrf6s21060nbr1 37ployees	PDF
Contextual Info: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	agr09090ef hz--960 ds04-134rfpp ds04-068rfpp	PDF
A113 Abstract: A114 A115 AN1955 C101 JESD22 MRF6S21060NBR1 MRF6S21060NR1 ipc 610 Class 3 100B4R7CW Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	mrf6s21060n mrf6s21060nr1 mrf6s21060nbr1 a113 +7a114 a115 an1955 c101 jesd22 ipc 610 class 3 100b4r7cw	PDF
MRF6S21060N Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110	Original	mrf6s21060n mrf6s21060nr1 mrf6s21060nbr1	PDF
AGR09090EF Abstract: JESD22-C101A ZX18 grm40x7r103k100al Contextual Info: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	agr09090ef hz--960 ds04-153rfpp ds04-134rfpp +3jesd22-c101a zx18 grm40x7r103k100al	PDF
100B100JW500X Contextual Info: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	agr09090ef hz--960 hz--895 ds04-134rfpp +2ds04-068rfpp 100b100jw500x	PDF
j0947 Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X Contextual Info: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	agr09090ef hz--960 typic14 hz--895 +5j0947 jesd22-c101a zx18 zo 109 wa 100b100jw500x	PDF
J535 equivalent Abstract: ad250 ipc 610 Class 3 pin protrusion MRF6S21060N Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 2, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110	Original	mrf6s21060n mrf6s21060nr1 mrf6s21060nbr1 j535 equivalent +2ad250 ipc 610 class 3 pin protrusion	PDF