L-BAND RF MOSFET Search Results

Contextual Info: Part Number: Integra ILD1214L250 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS − High Power Gain − Superior thermal stability The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2–1.4 GHz. Operating at a pulse width of 1ms with

2SK3074

Contextual Info: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER l Output Power : PO ≥ 630mW l Power Gain : GP ≥ 14.9dB l Drain Efficiency : ηD ≥ 45% Unit in mm MAXIMUM RATINGS Ta = 25°C

Contextual Info: ADVANCED POW ER Te c h n o l o g y • ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION 1-15MHz POWER MOS IV« N -CHANNEL ENHANCEMENT MODE RF POWER MOSFET_ The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

TRANSISTOR BC 136

Abstract: TRANSISTOR SOT-23 marking JE
Contextual Info: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain

ARF442

Abstract: Class B power amplifier, 13.56MHz 13.56mhz class e power amplifier
Contextual Info: ADVANCED PO W ER Te c h n o l o g y ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION 1-15MHz POWER MOS IV« N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

mosfet marking code AL sot-23

Abstract: transistor marking code 24 TRANSISTOR MARKING 24 24 marking transistor transistor marking code AL transistor B 722 MARKING CODE 24 TRANSISTOR Amplifier "marking code" D code marking 2M sot-23 MOSFET S690T
Contextual Info: TELEFUNKEN EL ECT RONI C 61C D • fiTBDDTb 0 0 0 5 4 5 b S 690 T trKLKFdDKlKIKl electronic Creative Technologies 4 ■ AL 66 _ r ~ 3 i- L i Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier

s791

Abstract: transistor B 722
Contextual Info: TELEFUNKEN ELECTRONIC T lt U M IM iN l electronic filC D • ÛTBÜG^b 0005437 *3 X -J/-/ r S 79! T Creativo Technotogìes Silicon NPN Planar RF Transistor Applications: RF-amplifier up to GHz range specially for wide band antenna amplifier Feature*: • High power gain

13.56mhz power

Abstract: power amplifier, 13.56MHz ARF440
Contextual Info: ADVANCED POW ER Te c h n o l o g y ARF440 ARF441 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV* N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET ;- if>!EÜ I Æ The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

d3008

Abstract: Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier k 1356 class e and 13.56MHz
Contextual Info: A d v a n ced P o w er Te c h n o l o g y * ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. Pi F OPERATION 1-15MHz POWER MOS IV N -C H A N N EL ENHANCEMENT MODE RF POWER MOSFET P f& Q M M The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

BC847

Abstract: LP2951 MRF6522-70 MRF6522-70R3
Contextual Info: MOTOROLA O rder this docum ent by M RF6522—70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF6522-70 M RF6522-70R3 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs D e s ig n e d fo r G S M 9 0 0 fre q u e n c y b a n d , th e h igh g a in and b ro a d b a n d

Tda 1026

Abstract: FAF 45 DIODE SMD TOKO 10.7MHz filter wide FM stereo MPX Decoder upc 1026 SFE10,7 TDA am/fm TOKO 10.7MHz 7511 AUDIO AMPLIFIER CIRCUIT DIAGRAM tda audio vs 50v
Contextual Info: TDA7511 AM/FM TUNER FOR CAR RADIO AND HIFI APPLICATIONS FM-PART • RF AGC GENERATION BY RF AND IF DETECTION FOR PIN DIODES AND MOSFET PRESTAGE ■ 1ST MIXER FOR 1ST FM IF 10.7MHz WITH PROGRAMMABLE IF TANK ADJUST FOR FM AND AM UPCONVERSION ■ 2 PROGRAMMABLE IF-GAIN STAGES

Contextual Info: TDA7511 AM/FM TUNER FOR CAR RADIO AND HIFI APPLICATIONS FM-PART • RF AGC GENERATION BY RF AND IF DETECTION FOR PIN DIODES AND MOSFET PRESTAGE ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e

smd mosfet z8

Abstract: BC847 LP2951 MRF18090A MRF18090AS BC847 SOT23
Contextual Info: MOTOROLA O rder this docum ent by M RF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M R F18090A M R F18090A S RF P o w e r F ield E ffe c t T ra n s is to rs N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

NEC MOSFET PUSHPULL

Contextual Info: High Power N-Channel Silicon NEM0899F01-30 MOSFET For Broadcast / Transmitters OUTLINE DIMENSIONS FEATURES_ Units in mm • HIGH OUTPUT POWER: 100 Watts • HIGH GAIN: PACKAGE OUTLINE F01 Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION

WB1 SOT23

Abstract: transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

WB1 SOT23

Abstract: WB2 SOT23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080S MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband

AGRC10GM

Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
Contextual Info: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor

0805 capacitor 10 pf

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.

MAR 544 MOSFET TRANSISTOR

Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically

0203S

Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
Contextual Info: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts

300w fm amplifier

Abstract: FM300-75 300w amplifier 300w power amplifier RF GAIN LTD 300w rf amplifier "RF MOSFET" 300W H101X FM Amplifier 300w
Contextual Info: FM300-75 300W - OIRT Band FM Power Amplifier Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET transistors to enhance ruggedness and reliability. • • • • • • 60 - 75 MHz 48 Volts Input/Output 50 Ω

Contextual Info: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs DEVICE CHARACTERISTICS From Device Data Sheet