L TO KU GAAS Search Results

L to Ku Band Low Noise GaAs MESFET

Contextual Info: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY

WR75 waveguide

Abstract: waveguide WR-75 Celeritek, CTR ku vsat amplifier "ku band" amplifier CTR-145030 WR-75 CRT-145033
Contextual Info: PRELIMINARY Ku-Band VSAT Transmit ODU Model CTR-145030 Model CTR-145033 FEATURES ❏ Designed for Broadband Data/IP and Telephony ❏ World’s Smallest ODU • 8” l x 3.4” (w) x 2.7” (h), 2.3 lbs. • Highly Efficient Thermal Transfer ❏ 14.0 to 14.5 GHz (Ku-Band) Frequency

MGF4919G

Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically

MGF4919

Abstract: MGF4919G
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG OUTLINE DRAWING series super-low-noise HEMT(High U n it:m illim e te rs Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The

NE76038

Abstract: NE76038-T1
Contextual Info: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES_ • NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: V ds = 3 V, Ids = 10 m A 1.8 dB typical at 12 GHz • NE76038 * HIGH ASSOCIATED GAIN: I I I I- r 24

NE76084

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE

1t377

Abstract: Schottky Barrier Diode
Contextual Info: 8382383 77C 0 0 2 6 2 SONY CORP/COMPONENT PRODS D T -Q l-Q H 1T377 GaAs Schottky Barrier Diode Description: The 1T377 is a low noise GaAs Schottky barrier diode designed for mixer applications up to the Ku-band. Plastic mold packaging has been adopted to reduce cost.

0544S

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 24 HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz 21 CO L g = 0.3 ^m , W g = 280 jam

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, I d s = 10 m A LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN tn T> G a = 9 dB TYP at f = 12 GHz L g = 0.3 |im , W g = 2 80 Jim

NE76038

Contextual Info: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES MF7ftn NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz L g = 0 .3 im , W g = 2 8 0 |xm CO LOW COST PLASTIC PACKAGING

GM 2310 A

Abstract: low noise hemt transistor MGF4714CP L to Ku GAAS L to Ku band amplifiers transistor GC 40103 HEMT
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP OUTLINE DRAWING low-noise HEMT(High Electron Unit:m illim eters Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a

low noise hemt transistor

Abstract: MGF4714CP InGaAs HEMT mitsubishi
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT High Electron Mobility OUTLINE DRAWING Unit:millimeters (0.6 Transistor) is designed for use in L to Ku band amplifiers. 1 The plastic mold package offer high cost performance, and has a

c 1181 H

Abstract: lD-10mA
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs F ET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION T he M GF4714CP OUTLINE DRAWING low-noise HEMT(High Electron Unit:millimeters Mobility T ransistor) is designed for use in L to Ku band amplifiers. T he plastic mold package offer high cost performance, and has a

NE674

Abstract: NE67400 NE67483B 0840 057 0615
Contextual Info: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz

4439 gm

Abstract: NE76083A NE76084S NE76084-T1
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LOW COST METAL/CERAMIC PACKAGE • ION IMPLANTATION • AVAILABLE IN TAPE & REEL 21 3.5

NE76038

Abstract: NE76038-T1
Contextual Info: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 3.5 • LOW COST PLASTIC PACKAGING

NE674

Abstract: NE67483B NEC 3552 NE67400 NE67483 PACKAGE OUTLINE 83B
Contextual Info: NE67400 NE67483B NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz

MGF1323

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli­ Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.

MGF4919G

Abstract: GS 1223 mgf49 MGF4916G opa 741 4919G
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs F ET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F491xG series super-low -noise H E M T(H igh E lectron M obilily Transisto r) is de signed for use in L to Ku band am plifiers. The herm etically sealed m etal-ceram ic

gs 069 0605

Abstract: NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V
Contextual Info: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES PACKAGE DIMENSIONS Unit: mm • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz 1.78 ± 0.2 • Gate length: L g = 0.3 µ m

NE76083A

Abstract: lg 83a
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION DESCRIPTION 21

30374

Abstract: NE76038 NE76038-T1
Contextual Info: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 • LG = 0.3 µm, WG = 280 µm • LOW COST PLASTIC PACKAGING • TAPE & REEL PACKAGING OPTION AVAILABLE

NE76083A

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • HERMETIC METAL/CERAMIC PACKAGE • ION IMPLANTATION 24 21 3.5 Noise Figure, NF dB • LG = 0.3 µm, WG = 280 µm 4 Ga 3 18 2.5 15 2 12 9

Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP a tf = 12 GHz HIGH ASSOCIATED GAIN 0Q ;o Ga = 9 dB TYP at f = 12 GHz < O c La = 0.3 |xm, Wa = 280 um ro