L 708 Search Results

A-708520

Contextual Info: 6 7 1 70852 2 3 1 N O TE S: 1 - H O US IN G M A T E R I A L : G L A S S F I L L E D P O L Y E S T E R , UL 9 4 V - 0 . C OL OR: B L A C K 2 - T E RM IN AL M A T E R IA L : PHOSPHOR BRONZE 3 - S E E A D D I T I O N A L S H E E T S FO R C H A R T S , P L A T I N G S , AND O V E R A L L

2SA708

Abstract: 2SA708A 2sa708 transistor 708AI 708a
Contextual Info: 2SA708, 2SA708A 2SA708, 2SA708A PNP U3V h 7 V i/^ ^ /P N P y ^ v y ffl/L o w SILICON EP ITA XIA L TRANSISTOR Frequency Am plifier, Medium Speed Switching i l f i f H l f f l / 'I n d u s t r i a l Use 2SA708, 708A i , ftx H ffl h 7 ' / y x ; t , •< # a x *ttS •

Contextual Info: 2 DATE REV. ECN APP' D BY 4-4-05 AO 7087 TRM 9-22-05 Al 7294 TRM 10-28-05 BO 7359 TRM ISO V IEW NOTES: 1 . P L U G K I T C O N S I S T S OF : P R E - 1 N S E R T E D P L U G BODY W I T H S H I E L D L OAD BAR 2. M A T E R I A L S : P L U G B O D Y : C L E A R P O L Y C A R B O N A T E , UL 94 -V O

442-602

Contextual Info: North American Representatives ADVANCED POWER Te c h n o l o g y ' R E G IO N A L S A L E S O F F IC E S Sates & M arketing M gr Tom L oder 503 382-8028 Illinois (N orthern) L A W Power (708) 416*8838 Nevada (Southern) RTS (714) 730-9561 T e rn es ee (Eastern)

smd diode a7

Abstract: EPCOS 800 314 epcos 2701 resonator 433.92 Mhz two-port saw resonator dcc6c footprint EPCOS 230 05 O EPCOS 230 00 O footprint dcc6c data sheet for all smd components footprint qcc8c
Contextual Info: Preliminary Data Sheet Microwave Ceramics 2-Pole Filter for DAB SMD 1472 MHz B69812-N1477-A540 Index Page 2 Page 3 Page 4 l l l l l l l l l l Application Features Component drawing Recommended footprint Characteristics Maximum ratings Typical passband characteristic

Contextual Info: Customer Information Sheet DRAWING N o . ; ORDER M80-708XXXX SHEET 2 OF 2 I IF IN l o. CODE: M80-708XXXX TOTAL No. zT, 36 DOUBT OF OF ASK | PITCHES ç x NOT | TO SCALE ALL DIMENSIONS IN mm 2,00 (1.4) CONTACTS y4 5 5 T ' 63 ' V F I N I S H ; -01 = T I N S H E L L , G O L D C L I I

Contextual Info: 2 ISO V IE W .040 ECN APP'D BY 4-4-05 AO 7087 TRM 9-22-05 Al 7294 TRM 10-28-05 BO 7359 TRM 1-6-06 B1 7426 TRM 2. MATERIALS: PL UG BODY: C L E A R P O L Y C A R B O N A T E , UL 9 4 - V O LOAD B A R : C L E A R P O L Y C A R B O N A T E , UL 9 4 - V O C O N T A C T S : C OP PE R A L L O Y , S E L E C T I V E GOLD P L A T I N G

Contextual Info:  6ZLWFKHG &DSDFLWRU %XWWHUZRUWK /RZSDVV LOWHU 'DWD 6KHHW 0,9:708 7K H O R ZS DV V IL O WH U KD V D QR Q L QY H UW L Q J EX WW HU  ZRU WK U HV S R QV H D QG L V P DG H L Q & 02 6 WH FK Q R O  RJ \  , W X V HV D V ZL WF K HG FD SD F L WR U I L O W HU L PS O H 

Contextual Info:  6ZLWFKHG &DSDFLWRU OOLSWLF /RZSDVV LOWHU 'DWD 6KHHW 0,9:708 7K H O RZS D V V IL O WH U KD V DQ H O O L SW L F UH V S RQ V H D Q G L V PDG H L Q & 02 6 WH FK Q RO RJ \  , W XV H V D V ZL W FK H G FD SD F L WR U IL O WH U FR PS R QH Q WV L PS O H PH Q WD WL R Q 

NEC D1708AG

Abstract: D1708AG-020 D1708AG ME 9435 d1708 PD1708AG-220 d1708a 1708AG-020-00 pd1708ag 708AG-220
Contextual Info: PRELIMINARY SPECIFICATION NEC MOS DIGITAL INTEGRATED CIRCUITS ELECTRON DEVICE ßPDT708AG-020, «PD1708AG-220 P L L F R E Q U E N C Y S Y N T H E S IZ E R A N D C O N T R O L L E R FOR M O B IL E F M / M W / L W R A D IO W IT H C L O C K DESCRIPTION The jitPDI 708A G -020//iPD 1708AG -220, a CMOS LSI chip developed for worldwide PLL frequency synthesizer

ta 8268 ah

Contextual Info: CSR13 MIL-C-39003/01 Solid Tantalum Capacitors I l i l U D I I I I I I I K I I I S C C a V I l I K K C t i 2 i l l i a i S I t l X i S l l l l C I S GENERAL SPECIFICATIONS Hermetically Sealed Graded Failure Rates I I I E I g l t f S i l f g s DC Leakage:

S1080

Abstract: PS1080
Contextual Info: C hicago M 1080 Johnson Drive Buffalo Grove, IL 60089 iniature 708-459-3400 Fax 708-459-2708 WHERE INNOVATION COMES TO LIGHT T - 1 3/ 4 L o w P r o f i l e L E D L a m p s D E S C R I P T I O N A N D F E A T U R E S M M State Prodüct* O P T I C A L Part Number

CI 4584

Abstract: 4584 inverter cd 4584 VCXO reeves-hoffman 301-864 CMOS 4584 L4584 Reeves hoffman video genlock pll soic 8 EL4583
Contextual Info: EL4584C f f X f lH t B C HIGH PtRFORMANCE ANAlÛG iNTÊGRATECCIRCUITS E L 4 5 8 4 C H n r h o n in l! fipnfoc/c *•/x AA,wvt M A U I t á U l l l W F e a tu re s G en era l D e sc r ip tio n • 36 M H z , g en eral p u rp o se P L L T h e E L 4584C is a P L L P h a s e L o ck L oop su b sy ste m , d esig n ed

pj 996 diode

Abstract: ME 9435 ESS 9018 pd1708 ST 9956 NEC car radio 4.5-Mhz MPD1708 LCD 1602 LCD12 UPD708
Contextual Info: r MOS INTEGRATED CIRCUITS j /PD 1708A G -021,//PD 1708A G -221 P LL F R E Q U E N C Y S Y N T H E S IZ E R A N D C O N T R O L L E R FO R M O B IL E F M / A M R A D IO W IT H C L O C K The /LiPD1708AG-021 ,n PD 708AG-221, a CMOS LSI chip developed for a P L L frequency synthesizer FM/AM

Contextual Info: COM P L E T E RA N GE 1 4 RIEDEL – Energy for a better solution! 4 l General information 12 l Single-phase transformers 24 l Three-phase transformers 32 l DC supplies / battery chargers 46 l Uninterruptible power supplies 52 l Variable ratio ring transformers

HY5PS1G831C

Abstract: HY5PS1G1631C
Contextual Info: HY5PS1G431C L FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP Preliminary 1Gb DDR2 SDRAM HY5PS1G431C(L)FP HY5PS1G831C(L)FP HY5PS1G1631C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

CM222

Abstract: CM113 CM252 filament C-2R
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 C h ic a g o M in ia t u r e 708-459-3400 Fax 708-459-2708 W HERE INNOVATION COM ES TO L IG H T G T L - 1 3/ 4 M i d g e t F l a n g e B a s e L e n s E n d .- • .2 3 6 6 . 0 - mm MAX. - - - » - -

HY5PS1G1631C

Abstract: hynix hy5ps1g1631c HY5PS1G831C HY5PS1G431C DDR2 sstl_18 class HY5PS1G1631C(L)FP
Contextual Info: HY5PS1G431C L FP-xxI HY5PS1G831C(L)FP-xxI HY5PS1G1631C(L)FP-xxI 1Gb DDR2 SDRAM HY5PS1G431C(L)FP-xxI HY5PS1G831C(L)FP-xxI HY5PS1G1631C(L)FP-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 6 0 08 9 708-459-3400 fax 708-459-2708 _ IM C hicago M iniature H I WHERE INNOVATION COMES TO LIGHT T - 1 3/ 4 C l e a r L e n s L E D L a m p s D E S C R I P T I O N A N D These non-diffused LED lamps offer high brightness in

silicon carbide LED

Abstract: silicon carbide
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 C h ic a g o M in ia t u r e 708-459-3400 Fax 708-459-2708 W HERE INNOVATION C O M ES TO L IG H T T - 1 a n d T - 1 3/4 B l u e L E D L a m p s SolidState Products These revolutionary new LED lamps emit a true Blue color

uPD70F3579

Abstract: uPD70F3585 uPD70F3572 uPD70F3570 uPD70F3571 uPD70F3584 uPD70F3577 specification V850E2V3 uPD70F3587 PD70F3580
Contextual Info: User Manual 32 Preliminary Document V850E2/Fx4-L 32-bit Microcontroller V850E2/FE4-L V850E2/FF4-L V850E2/FG4-L µPD70F3570 µPD70F3571 µPD70F3572 µPD70F3573 µPD70F3574 µPD70F3575 µPD70F3576 µPD70F3577 µPD70F3578 µPD70F3579 µPD70F3580 V850E2/FJ4-L

64-pinLQFP

Abstract: substitute transistor tip50 V850ES architecture Jx3-L uPD70F3797 uPD70F3798 uPD70F3799 uPD70F3800 uPD70F3801 uPD70F3802
Contextual Info: User’s Manual 32 V850ES/JC3-L, V850ES/JE3-L User’s Manual: Hardware RENESAS MCU V850ES/Jx3-L Microcontrollers V850ES/JC3-L V850ES/JE3-L PD70F3797 μPD70F3802 μPD70F3805 μPD70F3798 μPD70F3803 μPD70F3806 μPD70F3799 μPD70F3804 μPD70F3807 μPD70F3800

70F3842

Abstract: IECUBE CM519
Contextual Info: User’s Manual 32 V850ES/JC3-L, V850ES/JE3-L User’s Manual: Hardware RENESAS MCU V850ES/Jx3-L Microcontrollers V850ES/JC3-L V850ES/JE3-L PD70F3797 μPD70F3802 μPD70F3805 μPD70F3798 μPD70F3803 μPD70F3806 μPD70F3799 μPD70F3804 μPD70F3807 μPD70F3800

HY5PS121621C

Abstract: HY5PS12821C HY5PS12421C 1HY5PS121621C DDR2-800 HY5PS121621
Contextual Info: HY5PS12421C L FP-xI HY5PS12821C(L)FP-xI HY5PS121621C(L)FP-xI 512Mb DDR2 SDRAM HY5PS12421C(L)FP-xI HY5PS12821C(L)FP-xI HY5PS121621C(L)FP-xI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any