L 2046 NV Search Results

2046-P

Abstract: ITP00602 ITP00603 2046-N Q67100-H6104
Contextual Info: C I C I J C M C J I C I V I C I H J Memory Time Switch Small MTSS PEB 2046 PEF 2046 Prelim inary Data CMOS 1C Features 1 • Time/space switch for 2048-kbit/s PCM systems • Switching of up to 256 incoming PCM channels to up to m i t n n iI n n \_/ U L y

SMS24

Abstract: BD011 BD100 BD101 BD110 bd001
Contextual Info: SUMMIT SMS24 MICROELECTRONICS, Inc. Highly Programmble Voltage Supervisory Circuit FEATURES INTRODUCTION l User Programmable Device Configuration The SMS24 is an in-system programmable analog circuit. All configurations are accessible to the end user and can

d 2046

Abstract: BD011 BD100 BD101 BD110 SMS24 L 2046 nv TPTO
Contextual Info: SUMMIT SMS24 MICROELECTRONICS, Inc. Highly Programmble Voltage Supervisory Circuit FEATURES INTRODUCTION l User Programmable Device Configuration l Guaranteed Reset Valid to VCC = 1V l Immune to Short Negative VCC Transients l Six Unique Pin Configurations

ys 2103

Abstract: D120D s5140
Contextual Info: CMOS @ M ITEL MT9080B SMX - Switch Matrix Module SEMICONDUCTOR Features D S5140 ISSUE 4 March 1999 O rdering Inform ation 16 bit w ide data bus I/O MT9080BP 16 bit address bus 84 Pin PLCC M icroprocessor Interface -40°C to 70°C 2048 x 16 bit w ide m em ory SRAM

2609 al

Abstract: KT 708 459 MARKING sot89 powerex ks powerex kt THYRISTOR br 403
Contextual Info: POUEREX INC TID D • TS^MbSl ODDlflfiO 5 m Thyristor Assemblies-Water Cooled Assembly Module Type PTL6T620_ 15 _ 20 _30 PTL6T625_ 25 _30 _40 PTL7T720 _ 35 _ 45 _ 55 PTL7T7S0_55 _ 65 _ 75 PTL9T9G0_ 08 — — 10 _12

VD01-2

Abstract: th7833 TH783 TH7833A
Contextual Info: SSE *lGSb67S QGD0bM3 fl45 • T H C M THOMSON MIL ET SPATIAUX T> i, THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TH 7833A LINEAR CCD* IMAGE SENSOR 4096 PIXELS 'ksa'tftl-s'fesi-i'^sc VT1A n-2^TMVSS8Wl2-* ■ Pixel s iz e : 7|im x 7jim 7 |im pitch) ■ High data output ra te : 40 MHz typ.

convert 12v to 5.2v

Contextual Info: B U R R -BR O W N ADS7861 Dual, 500kHz, 12-Bit, 2 + 2 Channel, Simultaneous Sampling ANALOG-TO-DIGITAL CONVERTER DESCRIPTION FEATURES 4 INPUT CHANNELS FULLY DIFFERENTIAL INPUTS 2|is TOTAL THROUGHPUT PER CHANNEL GUARANTEED NO MISSING CODES 1MHz EFFECTIVE SAMPLING RATE

la 1201 sanyo

Abstract: 3SK107 3SK107 e V02s4 LI 1806 E 151 R
Contextual Info: SANYO SEMICONDUCTOR CORP 3SK107 15 E D I If 7n7D7b OCIOSA? N-Channel M OS Silicon Field-Effect Transistor Dual Gate 2031A High Frequency GeneralPurpose Amp Applications Use • FM tuners and VHF tuners Features • High power gain and small noise figure

SC2344

Abstract: 41L3
Contextual Info: SANYO SEMICONDUCTOR CORP 12E D g 7 cn707l=i 0D0 41L.3 2SC2344 Epitaxial Planar Silicon Transistors N P N / pnp 2010A High Voltage Switching, A F 100W Driver Applications 2SA1011 544E : 2SA1011 Ha» 1m » Ratings at Ta=25°C Collector to Base Voltage CBO

Contextual Info: B U R R -B R O W N ADS7861 Dual, 500kHz, 12-Bit, 2 + 2 Channel, Simultaneous Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • 4 INPUT CHANNELS • FULLY DIFFERENTIAL INPUTS • 2|is TOTAL THROUGHPUT PER CHANNEL The ADS7861 is a dual, 12-bit, 500kHz, analog-todigital converter with 4 fully differential input channels

Contextual Info: TC58BYG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG1S3HBAI4 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

Contextual Info: TC58BVG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HBAI4 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

Contextual Info: TC58BVG1S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG1S3HTA00 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

Contextual Info: TC58BVG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG1S3HBAI6 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

0x00041

Contextual Info: TC58BVG2S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HTAI0 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

kc 2026

Abstract: 100 KC 1N995 1N995M mil-s-19500 color coding
Contextual Info: M IL-S-I9500/227 NAW j 16 AnrU 1062 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1N995M 1. SCOPE 1.1 Scope. This specification covers the detail requirem ents for a germ anium switching diode and U in accordance with Specification M IL -S-19500. except as otherw ise specified herein.

Contextual Info: TC58BYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI4 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

Contextual Info: TC58BVG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG1S3HBAI4 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

Contextual Info: TC58BYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG1S3HBAI6 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

Contextual Info: TC58BVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

Contextual Info: TC58BVG2S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HTA00 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

Contextual Info: TC58BYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG2S0HBAI6 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.

tk 2238

Abstract: THERMISTOR NTC 1D-15 Mil-T-23648 1d111 tk 2238 19 144 ntc 33 0528 Dale Electronics thermistors 1d07 NTC 33 0504 1D110
Contextual Info: A COMPANY M O D E L1D NTC Therm istors OF TECHNO Uncoated Disc, M aterial ‘D’, 25Q to 5,000Q APPLICATIONS Engineered for • Temperature compensation • Temperature measurement • Temperature control • Meter compensation • Voltage regulation Amplitude control

1N1130

Abstract: 1N1131 GENERAL SEMICONDUCTOR diodes marking code me military part marking symbols jan JAN1N1 JAN1N1130
Contextual Info: J ttllrO T S M R l/Z d S A -S S C IO IIB I1 M Jttrn SUP&RS£p0fG M l L - S - l t5 Ü /2 S t E L u1 T ÌnA 1 4 &FTAPV e n e r v p i r am n w Æ. £ 1 4 % JL k / A A ^ V I X ' A V A A * V A 1 Se M k ju N d U l t O k P O 'T V P ir c a JL JL JL J U i K J d e v