TC58BVG2S0HTAI0 Search Results
TC58BVG2S0HTAI0 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TC58BVG2S0HTAI0 | Toshiba Memory America | Integrated Circuits (ICs) - Memory - IC FLASH 4G PARALLEL 48TSOP I | Original | 364.54KB |
TC58BVG2S0HTAI0 Price and Stock
KIOXIA
KIOXIA TC58BVG2S0HTAI0IC FLASH 4GBIT PARALLEL 48TSOP I |
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TC58BVG2S0HTAI0 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
0x00041Contextual Info: TC58BVG2S0HTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG2S0HTAI0 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks. |
Original |
TC58BVG2S0HTAI0 TC58BVG2S0HTAI0 2048blocks. 4224-byte 4224-bytes 2013-07-05C 0x00041 |