TC58BVG1S3HBAI6 Search Results
TC58BVG1S3HBAI6 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TC58BVG1S3HBAI6 | Toshiba Memory America | Integrated Circuits (ICs) - Memory - IC FLASH 2G PARALLEL 67VFBGA | Original | 705.79KB |
TC58BVG1S3HBAI6 Price and Stock
KIOXIA
KIOXIA TC58BVG1S3HBAI6IC FLASH 2GBIT PARALLEL 67VFBGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TC58BVG1S3HBAI6 | Tray | 318 | 1 |
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TC58BVG1S3HBAI6 | Tray | 14 Weeks | 338 |
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TC58BVG1S3HBAI6 | 12 Weeks | 1,690 |
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TC58BVG1S3HBAI6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TC58BVG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BVG1S3HBAI6 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. |
Original |
TC58BVG1S3HBAI6 TC58BVG1S3HBAI6 2048blocks. 2112-byte 2112-bytes 2013-01-31C |