KTD20 Search Results

KTD2005

Contextual Info: IC IC SMD Type Ultrahigh-Speed Switching Applications KTD2005 TSSOP-8 Unit: mm Features Low ON resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2

d2059

Abstract: K D2059 K D2059 y transistor K D2059 ktd2059 Kec D2059 K D2059 equivalent D2059-Y Y/transistor K D2059
Contextual Info: SEMICONDUCTOR KTD2059 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K 2 D2059 Y 3 No. 2005. 6. 9 816 4 Item Marking Description KEC K KEC CORPORATION Lot No. 816 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week

KTB1367

Abstract: KTD2059
Contextual Info: SEMICONDUCTOR KTB1367 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C S P Low Collector-Emitter Saturation Voltage : VCE sat =-2.0V(Max.). B E K G Complementary to KTD2059. L ) R M J MAXIMUM RATING (Ta=25 L SYMBOL RATING UNIT

K D2058 Y

Abstract: d2058 KD2058 K D2058 KD2058Y D2058Y d2058 y transistor D2058 KTD2058 KTD2058 Y
Contextual Info: SEMICONDUCTOR KTD2058 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D2058 Y 816 No. Item 1 KEC K KEC CORP. 2 Device Name D2058 KTD2058 3 hFE Grade Y O,Y,GR 4 Lot No. 816 98.06.23 Revision No : Marking 00

D2092

Abstract: kd2092 KTD2092 transistor D2092 marking K
Contextual Info: SEMICONDUCTOR KTD2092 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D2092 816 No. Item 1 KEC K KEC CORP. 2 Device Name D2092 KTD2092 3 hFE Grade 4 Lot No. 98.06.23 Revision No : Marking Description 8 Year

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F KTD2058 TRANSISTOR Plastic-Encapsulate Transistors TO-220F NPN 1. BASE 2.COLLECTOTR FEATURES . Low Collector Saturation Voltage : VCE(SAT) = 1. 0V(MAX) . 3. EMITTER MAXIMUM RATINGS* Ta=25℃ unless otherwise noted

KTB1368

Abstract: KTD2060 C251S IC105 25N20
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD2060 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES L • Good Linearity of Ii f e . • Complementary to KTB1368. MILLIMETERS uj MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage

ktd2060

Abstract: KTB1368
Contextual Info: SEMICONDUCTOR KTD2060 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM A B C D E F P F U ᴌGood Linearity of hFE. E S G B ᴌComplementary to KTB1368. R T L UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage

KTD2058

Abstract: KTB1366
Contextual Info: SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. G ᴌCollector Power Dissipation : PC=25W (Tc=25ᴱ) ᴌComplementary to KTD2058. R T L K L M

KTB1368

Abstract: KTD2060
Contextual Info: SEMICONDUCTOR KTB1368 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM A B C D E F P F U ᴌGood Linearity of hFE. E S G B ᴌComplementary to KTD2060. R T L UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage

Contextual Info: SEMICONDUCTOR KTD2092 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. A P S High hFE : hFE=500 1500 IC=0.5A . B E K G Low Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A). L ) R M SYMBOL

Contextual Info: SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A Low Collector Saturation Voltage C P S : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. B E : PC=25W (Tc=25 G Collector Power Dissipation ) K Complementary to KTD2058.

Contextual Info: SEMICONDUCTOR KTD2066 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER APPLICATION. A P S K G B E L L R J M D CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage

Contextual Info: SEMICONDUCTOR KTB1368 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A Good Linearity of hFE. C P S Complementary to KTD2060. G B E SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING Ta=25 VCBO -80 V Collector-Emitter Voltage

KTD2066

Contextual Info: K E C SEMICONDUCTOR KTD2066 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER APPLICATION. FEATURES • High DC Current Gain : h FE = 5 0 0 ~ 1 5 0 0 Ic = lA . • Low Collector Saturation Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors KTD2061 TO – 220F TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Transition Frequency z High Current z Complementary to KTB1369 2. COLLECTOR 3. EMITTER

KTD2092

Abstract: transistor KTD2092
Contextual Info: SEMICONDUCTOR KTD2092 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. A P S High hFE : hFE=500 1500 IC=0.5A . B E K G Low Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A). L ) R M SYMBOL

D2066

Abstract: kd2066 KTD2066 hFE kec
Contextual Info: SEMICONDUCTOR KTD2066 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D2066 816 No. Item 1 KEC K KEC CORP. 2 Device Name D2066 KTD2066 3 hFE Grade 4 Lot No. 98.06.23 Revision No : Marking Description 8 Year

KTD2092

Abstract: transistor ktD2092
Contextual Info: SEMICONDUCTOR KTD2092 TECHNICAL DATA e p it a x ia l p la n a r npn t r a n s is t o r SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • High hFE : hFE=500 ~ 1500 IC=0.5A . • Low Collector Saturation :VcE<sat)=0.35V(Max.) (Ic=lA ).

KTD2058 Y

Abstract: KTD2058 KTB1366
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE Sat =1.0V(Max.) (IC=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SEMICONDUCTOR KTD2059 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A Complementary to KTB1367. C P S G B E RATING UNIT VCBO 100 V Collector-Base Voltage L L M D Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO

Contextual Info: SEMICONDUCTOR KTB1367 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A Low Collector-Emitter Saturation Voltage C P S : VCE sat =-2.0V(Max.). B E K G Complementary to KTD2059. L ) R M J MAXIMUM RATING (Ta=25 L SYMBOL RATING UNIT

KTB1368

Abstract: KTD2060
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTB1368 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Good Linearity of Iife. • Complementary to KTD2060. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT CHARACTERISTIC Collector-Base Voltage V CBO -80

KTD2058

Abstract: KTD2058 DATASHEET KTB1 KTD2058 Y KTB1366
Contextual Info: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. G ᴌComplementary to KTB1366. R T L K L MAXIMUM RATING (Ta=25ᴱ) J RATING UNIT Collector-Base Voltage