KTC3879 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3879 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation 2.4 1.3 W (Tamb=25℃) 0.95 0.4 2.9 Collector current ICM: 0.05 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3879 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage 35 V V(BR)CBO:

KTC3879Y

Abstract: KTC3879
Contextual Info: _ SEMICONDUCTOR KTC3879 TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE • High Power Gain : Gpe=29dB Typ. (f=10.7MHz) MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING

GOC 33

Contextual Info: SEM ICONDUCTOR KTC3879S TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR HIGH FR E Q U E N C Y A PPLICATION. HF, V HF BAND AM PLIFIER A PPLICATIO N. FEA T U R E DIM • High Power Gain : Gpe=29dB Typ. (f=10.7MHz) M ILLIM ETER S A 2.9310.20 B 1.3010.20/-0.15

Contextual Info: SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3879 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1.0 FEATURES Power dissipation 2.4 1.3 W (Tamb=25℃) 0.95 0.4 2.9 Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range

marking RY

Abstract: sot marking RY KTC3879S D R MARKING
Contextual Info: SEMICONDUCTOR KTC3879S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking RY No. 1 Item Marking Device Mark R KTC3879S hFE Grade Y R,O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

Contextual Info: SEMICONDUCTOR KTC3879S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E B L FEATURE L D ・High Power Gain : Gpe=29dB Typ. (f=10.7MHz) 3 H G A 2 1 MAXIMUM RATING (Ta=25℃) Q Collector-Base Voltage

KTC*S

Abstract: 10.7MHZ KTC3879S FE3010
Contextual Info: SEMICONDUCTOR KTC3879S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE E B L L 3 H G A 2 D ᴌHigh Power Gain : Gpe=29dB Typ. (f=10.7MHz) 1 MAXIMUM RATING (Ta=25ᴱ) UNIT Collector-Base Voltage

KTC3879S

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3879S EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE • High Power Gain : Gpe=29dB Typ. (f=10.7MHz) DIM A B C D E G H J K L M N P MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT

Contextual Info: SEMICONDUCTOR KTC3879S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE 2001. 2. 24 Revision No : 2 1/4

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3879 TRANSISTOR NPN SOT–23 FEATURES  High Power Gain APPLICATIONS  High Frequency Application  HF,VHF Band Amplifier Application 1. BASE 2. EMITTER 3. COLLECTOR

transistor marking code HF

Abstract: HF MARKING sot23 marking code RY SOT KTC3879 HF marking transistor sot-23 sot-23 marking hf NPN Silicon Epitaxial Planar Transistor MARKING sot23 235 marking code RR Transistor sot23
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES KTC3879 Pb Lead-free z High power gain. APPLICATIONS z High frequency application. z HF,VHF band amplifier appilication. SOT-23 ORDERING INFORMATION Type No. Marking

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

KTC4079

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4079 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE • High Power Gain : Gpe=29dB Typ. (f=10.7MHz) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC -Œ SYMBOL Collector-Base Voltage

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

transistor aqy

Abstract: marking code RY SOT KTC3879 KTC3880S NPN Silicon Epitaxial Planar Transistor
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Small reverse transfer capacitance. z Low noise figure. KTC3880S Pb Lead-free APPLICATIONS z High frequency Low noise amplifier application. z VHF band amplifier application.

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

bq 8050

Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Contextual Info: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

KTC4079

Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC4079 EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE • High Power Gain : Gpe=29dB Typ. (f=10.7MHz) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC