KT 829 B Search Results

diode sy 345

Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Contextual Info: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989

kt829a

Abstract: VEB mikroelektronik Datenblattsammlung Halbleiterbauelemente DDR information applikation mikroelektronik B4207D mikroelektronik datenblattsammlung mikroelektronik DDR "halbleiterwerk frankfurt" KT 829 b
Contextual Info: 0=¡rúl[hE=°@Blel- t3nariilK e le k t r o n ik - b a u e t e m e n t e Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elek­ tronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" (LEB

KT 829 b

Abstract: FPD1 808 nm 1000 mw 2 pins KT 829
Contextual Info: T E K T R O N I X INC/ TRI ÛUI NT 2 bE » E3 B*ïDb23.a O O D D S b l 3 Q T R Û O M !L Î G ig a B it L o g ic 16G071 Transimpedance Amplifier 18 dB Gain / 700 MHz Bandwidth FEATURES 1High gain > 18 dB 1Broad Bandwith: DC to 700 MHz typ. >Low noise: 3 pA//Hz typ. for 16G071-30L1

244pn

Abstract: kt 807 KT 829 KT 829 b
Contextual Info: 6 VERWENDET NUMMER 829 WAR FÜR 4 5 MR ÄNDERUNGEN 3 4 3 N ISCHEN D IE 3 DEM TECH­ FO R TS CH R ITT BEHALTEN WIR UNS 2 D IEN EN , C AD -O R IG IN A L ZEICHNUNG Z EICH NU NG @ N IC H T ÄNDERN GESCHÜTZT COPYRIGH T A MP D E U T S C H L A N D VOR ALLE RECHTE

Contextual Info: i 4 N IG H T VERM A55TE KANTEN SIND NIGHT M A05TA B LIC H A ND ERU NG EN NI5CHEN BEHALTEN LD D IE DEM UN5 i 2 Z E I CHNUNG TECH- F0RT5CHRITT WIR 3 G E S C HU T Z T CJCOPVRIGHT D I ENEN, AMP VOR ALLE DEUTSCHLAND RECHTE DURCH RE V . 1988 GMBH V0RBEHALTEN DATUM

KT 829 b

Abstract: KT 829 KT 829 A
Contextual Info: \ 20 J 19 I 43025 P A R T CH ARACTERISTICS NUMBER OF POSITION ASSEM BLY ITEM NUMBER ASSEM BLY ITEM N U M B ER WITH I.D. RIB 02 4 3 0 2 5 -0 2 0 0 4 3 0 2 5 -0 2 X X — L I * L A S T CIRCUIT _ ^ Z 6 tYP <1.93 I T r ' 0.71 TYP CKT S IZ E S 2 8. 4 Im f 04 4 3 0 2 5 -0 4 0 0

Contextual Info: • 4bflfci22fci 0 0 0 1 3 5 5 424 IGBT Modules IIX Y High Short Circuit SOA Capability *C6S Type 0 Ts = 25°c : Ts 65°C A VII 50-12G1 * VII 75-12G1 * 1200 VII 50-12S1 VII 75-12S1 1200 ^on ^att max. typ. ! typ. I 125’C 125°C V i mj mj IhJS max. max.

Contextual Info: MbfibEEb □□□Ifiâl bô4 • IXY nixYS ^C65 VCES VII150-12S2 VCE sat IGBT Modules = 150 A = 1200 V = 3.7 V High Short Circuit SOA Capability L~ 8 0 9 11 & 6 10 Symbol Test Conditions v CES T, = 25'C to 150'C 1200 V Vco, Tj = 25'C to 150"C; RGE = 1 M fl

Contextual Info: R E V IS IO N K UNLESS OTHERWISE NOTED DIMENSIONS ARE IN INCHES NOTES: 1. 2. 3. 4. 5. 6. 7. HEIGHT VARIATION BETWEEN ANY TWO PINS SHALL BE .0 0 5 [ .1 3 ] MAX. MAXIMUM PIN ROTATION IN BODY: 2 \ TAILS TO BE SHEARED TO ACHIEVE DIMENSIONAL CALLOUTS. MINIMUM PUSHOUT FORCE: 3 lbs.

varistor mdc z301

Abstract: varistor mdc z151 Varistor MDC Z321 mdc z151 mdc z301 MDC Z131 MDC Z131 20 UL mdc z271 varistor NS 332 Varistor MDC Z681
Contextual Info: Maida Development Company 20 Libby Street • P.O. Box 3529 • Hampton, Virginia 23663 Telephone 757 723-0785 • FAX (757) 722-1194 www: maida.com • e-mail: maidadev@maida.com Large Metal Oxide Surge Absorbers with Tab Leads Series: D78 (32mm), D75 (40mm), D77 (53mm)

kt 829A

Abstract: a/transistor d829
Contextual Info: ANALOG DEVICES F EA T U R ES High Speed 120 M Hz Bandw idth, G ain = -1 230 V/ jis S lew Rate 90 ns Settling Tim e to 0.1% Ideal for V id eo A pp lications 0.02% Differential Gain 0.04° Differential Phase Low N oise_ 1.7 nV/VHz Input V oltage N oise 1.5 pA/VHz Input Current N oise

12N60FI

Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90

Contextual Info: plugs dimensions P. Max. Shall Size 8 Thread MM Inch * - 78 58? T Max. Bayonet Inch 706 MM inch 1? 9 8 766 J S M a i. MM In ch * .015IMM -.33 10 4 b 4 •HO Inch MM ’ H jr •lb b? ' tv:.’ i r J p ;,. in , ' tih,' 3. :* 1 b.’ *4' s:» SO 10 731 18 6 7

12v to Amplifier 200w circuit diagrams

Abstract: 200w power amplifier circuit diagram KT 829 b 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 200w stereo audio Amplifier diagram NE5517 NE5517NG 12v to Amplifier 200w schematic diagrams 200w audio amplifier circuit diagram
Contextual Info: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of

12v to Amplifier 200w circuit diagrams

Abstract: 12v to Amplifier 200w schematic diagrams 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NE5517 200w audio amplifier circuit diagram NE5517N NE5517D 200w power amplifier circuit diagram AU5517
Contextual Info: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of

NE5517NG

Contextual Info: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of

BmaX 3c8

Abstract: Ferrite 3c8 3C8 Ferrite Material core 3c8 3c8 ferrite Transformer Core M6 Ferrite 3c8 flyback ferrite core transformer design UC1840 power loss 3c8
Contextual Info: POW ER TRAN SFO R M ER D ESIG N FOR SW ITCH IN G POW ER SUPPLIES This design p r ocedure applies to tran s f o r m e r s used for conpling and isolation, in which energy storage is undesired. The *t r a n s f o r m e r s ’ used in Flyback circuits are actually coupled inductors used primarily to store

12P05

Abstract: DIN 46 244 8-829532-2 8829 KT 829 b
Contextual Info: 6 NUM M ER 829 532 5 4 3 ÄNDERUNGEN C A D - O R IG IN A L Z E IC H N U N G N IC H T 2 ÄNDERN N IS C H E N BEHALTEN D IE DEM E 0 R T 5 C H R IT T W IR UNS Z EIC H N U N G TECH­ GESCHÜTZT C C 0 P Y R IG H T D IE N E N , AMR VOR ALLE REV. DURCH ÄNDERUNG

Contextual Info: KOT Ü 1* High Speed, Low Noise Video Op Amp AD829 ANALOG ► DEVICES CONNECTION DIAGRAM FEATURES High Speed 120 MHz Bandwidth, Gain = - 1 230 V /jis Slew Rate 90 ns Settling Time to 0.1% Ideal for Video Applications 0.02% Differential Gain 0.04° Differential Phase

2T6551

Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Contextual Info: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"

DELL Optiplex 380

Contextual Info: Agilent E4980A Precision LCR Meter 20 Hz to 2 MHz Data Sheet Fully compliant to LXI Class C specification Definitions All specifications apply to the conditions of a 0 to 55 °C temperature range, unless otherwise stated, and 30 minutes after the instrument has been turned on.

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

AOTF

Abstract: U.FLJ
Contextual Info: in \ <N Ui Ü 0, 3 NUMMJK B 2B 62 9 VERW EN D ET F O R *SOE«UMOC« OLE 'Jfc.'l »BCHNI3CHCN fO R T 3 C K * m MtKEM, 9 ÍH U .T (N Win uns VW» . WA« NR. « 0 r; *L1E*A1 IONS CONCCftSÜN« TECH N . CAC-OA10tN*L K im w c sesm O t j t OUf>C* (§Jcop» t*tr <wa

KT 829 b

Abstract: KT 829 onsemi Marking LG TVS marking LZ ONSEMI SMF5.0AT1 SMF58A SMF60A SMF10A SMF11A SMF12A
Contextual Info: SMF5.0AT1 Series Zener Transient Voltage Suppressor SOD−123 Flat Lead Package The SMF5.0A Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low zener impedance and