KSH 200 TRANSISTOR Search Results

KSH 200 TRANSISTOR

Abstract: Transistor ksh 200 E506
Contextual Info: KSH32/32C PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS • L o a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n N o S u ffix • S tra ig h t L e a d (I.P A C K ,

ksd 250v 10a

Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Contextual Info: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715

ksh 200 TRANSISTOR equivalent

Abstract: KSH 200 TRANSISTOR
Contextual Info: KSH112 KSH112 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP112

SD1406

Abstract: SD2058 KSD201 sb1150 SD-1406
Contextual Info: TRANSISTORS FUNCTION GUIDE 2.1.6 T0-220 F Type T ran sisto rs 'c VcEO (A) (V) Device Type V ce NPN 1.5 150 3 55 Condition K SC 3 2 9 6 Condition Hfe lc lc (V) (A) MIN MAX (A) (A) K SA 130 4 10 0.5 40 75 0.5 0.05 K SA 1614 5 0.5 40 240 1 0.1 PNP V CE(sat)(V) Condition

ksd 180

Abstract: ksd 180/60 ksd 250 se130 tip142
Contextual Info: TRANSISTO RS FUNCTION GUIDE 2. POWER TRANSISTORS 2.1. General Purpose Transistors 2.1.1 T O -1 2 6 Type T r a n s is to rs Device Type Condition Ic VCEO A (V) NPN PNP 0.1 180 KSC2682 KSA1142 200 KSC3502 300 KSC3503 0.1 VCE 200 Condition hFE Ic Ic VcE{sat)(V)

tny 175

Abstract: TDA8179 TNY IC POWER SUPPLY vd56 TDA8179S TV booster diagram 7707 u711 tny 200
Contextual Info: 7^5=1537 £jJ 005400=1 1 m 'T - 7 l~ c n - \ \ S C S -T H O M S O N TDA8179 ilLO S G S-THOMSON 30E D TV VERTICAL DEFLECTION BOOSTER ADVANCE DATA POWER AMPLIFIER FLYBACK GENERATOR 105V PEAK THERMAL PROTECTION CURRENT LIMITED TO GND DESCRIPTION Designed for Monitors and high performance TVs,

GE TRIAC SC40B

Abstract: 2n4992 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can

transistor D128

Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
Contextual Info: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes

Contextual Info: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS

Contextual Info: O K I semiconductor MSM5141OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The MSM514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The tech n o lo gy used to fab ricate the M SM 514100A/AL is O KI's CMOS silicon gate process

Contextual Info: O K I semiconductor MSM514100_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE G EN ERA L DESCRIPTION The MSM514100 ¡5 a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100 is OKI's CMOS silicon gate process technology.

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

Contextual Info: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS

DU9 308

Abstract: 32-PIN MSM5117900-70 MSM5117900-80
Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5

TC88411F

Abstract: TC88411
Contextual Info: INTEGRATED OSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

new Jj8

Contextual Info: TO SH IB A TC58A040F TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E^PROM DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits X 128 pages X 128 blocks.

Contextual Info: PRELIMINARY HDD PRODUCTS KA3120 SPINDLE & VOICE COIL MOTOR ONE CHIP DRIVER The KA3120 is an AS IC com bination chip, w hich w as designed for the HDD, includes the follow ing functions: spindle m otor drive, voice coil m otor drive, retract and pow er m anagem ent.

IC motor HDD samsung

Abstract: samsung hdd motor HDD 3 PIN BRUSHLESS motor power supply bldc sensorless 12v brushless motor driver samsung hdd KA3120 KSH29 hdd spindle motor SSD2003 HDD spindle motor samsung
Contextual Info: PRELIMINARY HDD PRODUCTS KA3120 SPINDLE & VOICE COIL MOTOR ONE CHIP DRIVER The KA3120 is an AS IC com bination chip, w hich w as designed for the HDD, includes the follow ing functions: spindle m otor drive, voice coil m otor drive, retract and pow er m anagem ent.

comutation

Abstract: Spindle VCM driver HDD SH rb4110 sd2003 bem diode IC99 IC motor HDD samsung BD3/1/TX13/7.9/LTC1647-2/bldc sensorless 12v brushless motor driver
Contextual Info: PRELIMINARY HDD PRODUCTS KA3120 SPINDLE & VOICE COIL MOTOR ONE CHIP DRIVER The KA3120 is an AS IC com bination chip, w hich w as designed fo r the HDD, includes the follow ing functions: spindle m otor drive, voice coil m otor drive, retract and pow er m anagem ent.

800w power amplifier circuit diagram

Abstract: 500w power amplifier circuit diagram 800w rf power amplifier circuit diagram GE SCR Manual scr T103 SCR Phase Control IC lN4740A "electronic measurements inc" hcr 220V AC 12V DC regulated switching Fuse t5a 250v
Contextual Info: ELECTRONIC MEASUREMENTS, INC. 405 ESSEX RD., NEPTUNE, N.J. 07753 83 458-001 - FIVE YEAR WARRANTY El e c t r o n i c Me as ur em e nt s, Inc. w a r r a n t s this equipment m a n u f a c t u r e d by l i b and sold by us Dr our a u t h o r i z e d agents to a m a n u f a c t u r e r or

TLE7368

Contextual Info: TLE7368 Next Generation Micro Controller Supply TLE7368G TLE7368E TLE7368-2E TLE7368-3E Data Sheet Rev. 2.1, 2010-11-22 Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

transistor equivalent ksh200

Abstract: TLE7368G ksh200 equivalent TLE7368 TLE7368-3E TLE7368E TLE7368-2E 4139 sensor ksh200 TRANSISTOR equivalent TLE368E
Contextual Info: TLE7368 Next Generation Micro Controller Supply TLE7368G TLE7368E TLE7368-2E TLE7368-3E Data Sheet Rev. 2.1, 2010-11-22 Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

transistor equivalent ksh200

Abstract: ksh200 TRANSISTOR equivalent ksh200 equivalent analog 7368 TLE7368E fairchild ignition controller 7368G PG-DSO-36 TLE7368 7368
Contextual Info: T ar ge t d at a s h eet , R ev 0 .61 , 2 00 6- 12- 1 8 TLE 7368 Next generation micro controller supply Automotive Power N e v e r s t o p t h i n k i n g . Edition 2005-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany