KSC5039 Search Results

Contextual Info: NPN SILICON TRANSISTOR KSC5039 HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic VcBO Sym bol 800 V C ollector-E m itter Voltage VcEO 400 V Em itter-Base Voltage V ebo 7 V C ollecto r C urrent DC

Contextual Info: KSC5039F NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit VcBO 8 00 4 00 7 V V V 5 10 A A Pc 3 30 A W Ti T stg 150 —65 - 1 5 0 'C CC C o lle cto r B ase Voltage

KSC5039

Abstract: NPN Transistor TO220 vcc 150V
Contextual Info: KSC5039 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VCBO Symbol 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current DC

REGULATOR IC FOR 150V

Abstract: 400V voltage regulator vbe 10v, vce 500v NPN Transistor KSC5039 NPN Transistor 1A 400V transistor Ic 1A datasheet NPN vce 500v NPN Transistor transistor 500v 0.5a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5039 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose

Contextual Info: KSC5039 NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION ABSOLUTE MIXIMUM RATING Ta=25 C Characteristic Symbol Rating V CBO V ceo 800 400 7 5 10 3 70 150 -6 5 -1 5 0 Collector B ase Voltage Collector Emitter Voltage Emitter B a se Voltage

Contextual Info: KSC5039F NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F ABSOLUTE MAXIMUN RATING Ta=25 c> Characteristics Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC Collector Currerit(pulse)

Contextual Info: KSC5039F NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage V ceo 800 V V CEO 400 7 5 10 V V Characteristic Symbol V ebo Collector Current DC

KSC5039F

Abstract: transistor 500v 0.5a
Contextual Info: KSC5039F NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic Symbol VCBO 800 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 7 V

Contextual Info: NPN SILICON TRANSISTOR KSC5039 HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector-Base Voltage VcBO 800 V Collector-Emitter Voltage VcEO 400 V Emitter-Base Voltage V ebo 7 V Collector Current DC

Contextual Info: KSC5039F NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic VcBO S ym bol 800 V C ollector-E m itter Voltage V CEO 400 V Em itter-Base Voltage

KSC5039F

Contextual Info: KSC5039F KSC5039F High Voltage Power Switch Switching Application TO-220F 1 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 400

Contextual Info: KSC5039 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 800 V Collector-Emitter Voltage VcEO 400 V Emitter-Base Voltage V ebo 7 V Collector Current DC

Contextual Info: KSC5039 KSC5039 High Voltage Power Switch Switching Application TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 400 V VCEO

Contextual Info: KSC5039F KSC5039F High Voltage Power Switch Switching Application TO-220F 1 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 400

Contextual Info: KSC5039F NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic V cB O Sym bol 800 V C ollector-E m itter Voltage V CEO 400 V Em itter-Base Voltage V ebo 7

KSC5039

Abstract: transistor 500v 0.5a
Contextual Info: NPN SILICON TRANSISTO R KSC5039 HIGH VOLTAGE POWER SW ITCH SW ITCHING APPLICATION A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o l le c to r-B a s e V o lta g e C h a r a c te r is tic V cB O Sym bol 800 V C o lle c to r-E m itte r V o lta g e V cE O 400

Contextual Info: KSC5039 NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION -t o -2 2 0 ABSOLUTE MIXIMUM RATING Characteristic Symbol C o lle cto r Base Voltage V CBO C o lle cto r E m itte r V oltage E m itte r B a se V oltage V CEO V EBO

KSC5039

Contextual Info: KSC5039 KSC5039 High Voltage Power Switch Switching Application TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 800 Units V 400 V VCEO

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

KSC5027

Abstract: power BJT KSC5345 KSE13009 KSE13007 KSE13007 equivalent BUT11 KSA1156 KSC2333 KSC2335
Contextual Info: Discrete Power BJT Switch Products VCEO V VCBO (V) VEBO (V) IC (A) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) tSTG (us) tF (us) TO-126 NPN Configuration KSC2752 400 500 7 0.5 10 20 80 0.05 - 1 2.5 1 KSC5026M 800 1100 7 1.5 20 10 40 0.1 - 2 3 0.3

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

power supply IRF830 APPLICATION

Abstract: ic sk 383 zener diode 1n4148 gP DIODE ths 16v KA75248 pfc ic
Contextual Info: KA7524B PFC 1C POWER FACTOR CONTROLLER The KA7524B provides the necessary feature« to implement the Electronic BALLAST control and S M P .S application for desig­ ning on active power factor correction circuit. FEATURES • • • • • Internal self-starting

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)