KMM5362 Search Results

tb41

Contextual Info: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .

Contextual Info: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • C ha n g ed m odule P C B from 6 -L a ye r to 4-Layer. • C ha n g ed M odule Part No. from K M M 5 3 6 2 2 0 3 C W /C W G to K M M 5 3 6 2 2 0 3 C 2 W /C 2 W G caused by P C B revision .

Contextual Info: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung

KMM536256

Contextual Info: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­ sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4

SP16K

Abstract: kmm5362003
Contextual Info: SAMSUNG ELECTRONICS b?E D INC • ? cJbmHH D015BbB bS7 I KMM5362003/G SP16K DRAM MODULES 2M x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KMM5362003/G is a 2M b itx 3 6 Dynamic RAM high density m em ory module. The Samsung

KMM5362000

Contextual Info: KMM5362000B1/B1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5362000B1 consist of sixteen CMOS 1 Mx 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M x 1

KMM536256B-8

Abstract: KMM536256B LY 9525
Contextual Info: KMM536256B DRAM MODULES 256KX36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 2 5 6 B is a 2 6 2 ,1 4 4 bit X 3 6 Dynamic RAM high density m em ory module. The Sam­ sung K M M 5 3 6 2 5 6 B con sist of eight CMOS 2 5 6 K X 4

Contextual Info: DRAM MODULE KMM5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE KMM5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362203CW /CWG to KMM5362203C2W /C2W G caused by PCB revision .

KMM536256C-8

Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7^4145 KM M536256C/CG QQ1504Q 12 4 I SUGK DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance ranae: • • • • • • • tnAC •cac KMM536256C-7 70ns 20ns 130ns KMM536256C-8

Contextual Info: b7E i> S A MS UN G E L E C T R O N I C S INC 7^4142 KMM536256W/WG 0015 20 b Ô2Ô • DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536256W is a 256K bitsx36 Dynamic RAM high density memory module. The Samsung

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 71b4142 0Q151b4 54e! I KMM5362000B/BG SM6K DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tnAc tc A c tRC 60ns 15ns 110ns KM M 5362000B-7 70ns 20ns 130ns KMM5362000B-8 . 80ns

Contextual Info: Preliminary DRAM MODULE_ KMM5362203BW/BWG KMM5362203BW/BWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2M bit x 36 Dynamic RAM high density memory module. The

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^ 1 4 1 4 2 GÜ1S170 flH2 I KMM5362000BH SP1GK DRAM MODULES 2M x36 DRAM SIMM Memory Module This SIMM is the x3 6 built on x 40 board FEATURES GENERAL DESCRIPTION • Performance range: ÍRAC • • •

Contextual Info: KMM5362000A/AG DRAM MODULES 2M X36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1M X 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M X 1

Contextual Info: Preliminary DRAM MODULE KMM5362205BW/BWG KMM5362205BW/BWG Fast Page Mode with Extended Data Out 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362205BW is a 2M bit x 36 • Part Identification Dynamic RAM high density memory module. The

km44c1000cj

Contextual Info: / DRAM MODULE 8 Mega Byte KMM5362000C2/C2G Fast Page Mode 2Mx36 DRAM SIMM Using Parity PLCC, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000C2 is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000C2 consists ot sixteen CMOS

Contextual Info: DRAM MODULE 8 Mega Byte KMM5362000CH Fast Page Mode / 2Mx36 DRAM SIMM with ECC, 5V V GENERAL DESCRIPTION FEATURES The Samsung KMM5362000CH is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362000CH consists of eighteen CMOS 1Mx4bit DRAMs in 20-pin SOJ packages

KMM536256

Contextual Info: DRAM MODULES KMM536256W/WG 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM536256W is a 256K b it x 36 Dynam ­ ic RAM high de nsity m em ory m odule. The Sam sung KMM536256W c o n sist o f tw o CMOS 2 5 6 K x 1 8 bit

Contextual Info: li SAMSUNG E L E C T R O N I C S M2 E INC D • Q 0 1 G 4 CÌ 0 KMM536256B T E ISMGK DRAM MODULES 2 5 6K X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­

Contextual Info: SAMSUN6 ELECTRONICS INC b4E D • 7^4142 KMM5362000B1/B1G 0G14b47 G67 ■ SflGK DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung

D01471

Contextual Info: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam­ ic RAM high d e n sity m em ory m odule. The Sam sung

Contextual Info: KMM5362000A/AG/A1 /A1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 5362000A is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung K M M 5362000A consist of sixteen CMOS 1 M X 4 bit

KMM5362

Abstract: KMM536256BW KMM536256B
Contextual Info: DRAM MODULE_/ _ 1 Mega Byte J KMM536256BW/BWG Fast Page Mode 256Kx36 DRAM SIMM Using 256Kx18 DRAM, 5V G E N E R A L D ESCRIPTIO N FEATURES The Samsung KMM536256BW is a 256K bit x 36 Dynamic RAM high density memory module. The • Performance Range: