KMM366S203CT Search Results

Contextual Info: KMM366S203CT PC100 SDRAM M O D U L E Re vis ion Hist ory Revision .0 Feb. 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. In(lnputs) : ± 5uA to ± 1uA, I il (DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V ref =1,4V ± 200 mV.

KM48S2020CT

Contextual Info: KMM366S203CTL PC66 SDRAM MODULE KMM366S203CTL SDRAM DIMM 2Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S203CTL is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KM48S2020

Abstract: KMM366S203CT-G8 KMM366S203CT-GH KMM366S203CT-GL KM48S2020CT-G8
Contextual Info: KMM366S203CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.

KM48S2020CT-G10

Abstract: KMM366S203CTL-G0 KM48S2020 EEPROM 16MB KM48S2020CT-G km-48
Contextual Info: KMM366S203CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) :±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM366S203CTS-G8

Abstract: KMM366S203CTS-GH KMM366S203CTS-GL 2mx64 sdram
Contextual Info: PC100 SDRAM MODULE KMM366S203CTS Revision History [Rev.2] March 24. 1999 Package Dimension changed. Rev.2 Mar. 1999 KMM366S203CTS PC100 SDRAM MODULE KMM366S203CTS SDRAM DIMM 2Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION

Contextual Info: PC100 SDRAM MODULE KMM366S203CTS KMM366S203CTS SDRAM DIMM 2Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S203CTS is a 2M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung

KMM366S203CT-G8

Abstract: KMM366S203CT-GH KMM366S203CT-GL
Contextual Info: KMM366S203CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.

KMM366S203CTL-G0

Contextual Info: KMM366S203CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.

Contextual Info: KMM366S203CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA.

Contextual Info: KMM366S203CTS PC100 Unbuffered DIMM Revision History [Rev.2] March 24. 1999 Package Dimension changed. Rev.2 Mar. 1999 KMM366S203CTS PC100 Unbuffered DIMM KMM366S203CTS SDRAM DIMM 2Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD

BA 151 k

Contextual Info: KMM366S203CTL PC66 SDR AM MO D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -in p u t leakage currents (Inputs) : ±5uA to ±1 uA. -Input leakage currents (I/O) : ±5uA to ±1.5uA.

KMM366S424BTL-G0

Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Contextual Info: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .