KM68U1000 Search Results

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V

Contextual Info: Preliminary CMOS SRAM KM68V1000E, KM68U1000E Family Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Révision History Revision No. 0.0 History Design target Draft Data Remark Septem ber 9, 1998 Prelim inary The attached datasheets are provided by SAM SU N G Electronics. SAM SU N G Electronics CO., LTD. reserves the right to change the specifications and

Z3CS

Abstract: 32TSOP
Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128K x8 bit Low Power and Low voltage CMOS static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 >m CMOS • Organization: 128KX8 • Power Supply Voltage : KM68V1000C fam ily: 3.3VK3.3V KM68U1OOOC family : 3.0V±0.3V

2183A

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V

KM68U1000B

Abstract: KM68V1000B KM68V1000BLG-7L
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft August 12, 1995 Preliminary 1.0 Finalize April 12, 1996 Final 2.0 Revise

KM68U1000BLG8L

Abstract: 32SOP
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6» «CMOS • Organization : 128K x8 • Power Supply Voltage KM68V1000B family: 3.3V« *0.3V KM68U1000B family: 3.0V- -0.3V

KM68U1000E

Abstract: KM68U1000ELI-L KM68U1000EL-L KM68V1000E KM68V1000ELI-L KM68V1000EL-L KM68V1000ELG-7L
Contextual Info: KM68V1000E, KM68U1000E Family CMOS SRAM Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target September 9, 1998 Preliminary 1.0 Finalize - Change I CC1 : 3 to 4mA April 13, 1998

Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Initial draft Draft Data Remark July 3rd 1996 Preliminary 1.0 Finalize - Increased I s b , I dr Commercial part = 1 0 jj.A

Contextual Info: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8

VDR 14D

Abstract: zd107
Contextual Info: Preliminary CMOS SRAM KM68U1000BLI / Ll-L 128Kx8 Bit Low Voltage & Industrial Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C > Fast Access Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165(iW (max.)L-Version

68U1000

Contextual Info: Preliminary CMOS SRAM KM68U1000BLE / LE-L 128Kx8 Bit Low Voltage & Extended Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast A ccess Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165nW (max.)L-Version

KM68V1000CLG

Abstract: KM68U1000CLTI-8L KM68U1000C KM68V1000C kM68v1000cle km68v1000clte-7l
Contextual Info: KM68V1000C, KM68U1000C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 3, 1996 Preliminary 1.0 Finalize - Increased ISB, IDR Commercial part = 10µA

100NSL

Abstract: 32SOP
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6 im CMOS • Organization : 128K x8 • Power Supply Voltage : KM68V1000B family : 3.3V±0.3V KM68U1000B family : 3.0V±0.3V

KM68U1000BLG8L

Abstract: KM68V1000BLG7L
Contextual Info: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM 68V1000B and KM 68U1000B fam ily are fabricated • O rganization : 128K x8 by SAMSUNG'S advanced CM O S process technology.

KM68V1000ELG-7L

Abstract: KM68U1000E KM68U1000ELI-L KM68U1000EL-L KM68V1000E KM68V1000ELI-L KM68V1000EL-L KM68V1000ELG7L
Contextual Info: Preliminary CMOS SRAM KM68V1000E, KM68U1000E Family Document Title 128Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Design target September 9, 1998 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

UM62256EM-70LL

Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
Contextual Info: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B

K6L1008V2C-TF70

Abstract: KM68U1000C KM68V1000C K6L1008V2C K6L1008V2C-RB70 K6L1008V2C-TB70 STSOP
Contextual Info: K6L1008V2C, K6L1008U2C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 3, 1996 Preliminary 1.0 Finalize - Increased ISB, IDR Commercial part = 10µA

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -

KM616U1000BL-L

Abstract: KM68U512ALE-L
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. Low Power SRAM Low Vcc Operation Density 256K Org. & Op Vcc 32K X 8 KM62V256CL-L (Vcc=3.0~3.6V) 32Kx8 (Vcc=2.7~3.3V) 512K 6 4K X 8 (Vcc=3.0~3.6V) 64KX8 (Vcc=2.7~3.3V) 1M Product No’ 128KX8 (Vcc=3.0~3.6V) Speed 70/100 30/10

K6T1008U2C

Abstract: K6T1008U2C-B K6T1008V2C K6T1008V2C-B KM68U1000C KM68V1000C
Contextual Info: K6T1008V2C, K6T1008U2C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 3, 1996 Preliminary 1.0 Finalize - Increased ISB, IDR Commercial part = 10µA

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

28kx8

Contextual Info: K M 6 8 V 1 OOOC, K M 6 8 U 1 OOOC F a m i l y D o c u m e n t CMOS SRAM T itle 128K x8 bit L o w P ow er and Low Voltage CMOS Static RAM R e v a s m n H i s t o r y R e visio n No. H is to ry D ra ft Data R em ark 0. 0 Initial d ra ft J u ly 3rd 1996 P relim inary