KM68B Search Results

KM68B261A-6

Abstract: KM68B261A-7 KM68B261A-8 Static Random Access Memory
Contextual Info: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TT L): 110 mA (Max.) (CMO S): 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5%T>ower Supply

KM68BV4002

Contextual Info: KM68BV4002 BiCMOS SRAM D o cu m e n t Title 512K x8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.

KM68BV4002

Abstract: KM68BV4002J-12 KM68BV4002J-15 36-SOJ ttl 74142
Contextual Info: Advanced Information KM68BV4002 BiCMOS SRAM 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002J-12: 165mA(Max.)

KM68B4002J-10

Abstract: KM68B4002J-12 KM68B4002J-15
Contextual Info: PRELIMINARY KM68B4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 10,1 2,15 ns M ax. Th e K M 68B 4002 is a 4 ,1 9 4,30 4 -b it • Low Pow er Dissipation Random Access M em ory organized as 5 2 4 ,2 8 8 words

KM68BV4002

Contextual Info: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)

KM68B1002J-10

Abstract: KM68B1002J-8 KM68B1002J-12 KM68B1002J-15
Contextual Info: SAMSUNG ELECTRONICS INC b?E d m 7Tb4me oanb^i ^bb BiCMOS SRAM KM68B1002 131,072 WORD x 8 Bit Ultra High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 8, 9 ,1 0 ,1 2 , 15ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

KM68B261A-6

Abstract: KM68B261A-7 KM68B261A-8
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7*^4142 □□175^4 7 C]4 SUGK PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6 , 7, 8 ns max. • Low Power Dissipation Standby (TTL)

Contextual Info: KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 9 ,1 0 ,12ns Max. • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM68B257AJ-8:185mA (Max.)

Contextual Info: KM68B257A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 8 ,1 0 ,1 2 ns Max. • Low Power Dissipation Standby (T T L ): 110 mA (Max.) (C M O S ): 20 mA (Max.) Operating K M 68B 257A J-8 :1 8 5 mA (Max.)

Contextual Info: PRELIMINARY KM68B4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15 ns Max. • Low Power Dissipation The KM68B4002 is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D • 7 T b 4 1 4 2 0 0 1 7 5 ^ 4 7^4 PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL)

68B1002J-12

Contextual Info: fÇ? SAMSUNG KM68B1002 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES T h l K M 68B1002 is a 1 ,048,576-bit high­ speed static random access m em ory o r­ ganized as 131,072 words by 8 bit. T he K M 68B1002 uses eight com m on input and output lines and has an output enable pin

Contextual Info: SAMSUNG ELECTRONICS INC 42E » 7=^4142 DQIOTST G ÊSSMGK P R ELIM INA R Y “ BiCMOS SRAM KM68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation

Contextual Info: SAMSUNG ELECTRONICS INC b?E T> 7 *îb4 m s 0P17S1S bSO • SMGK PRELIMINARY BiCMOS SRAM KM68B261A ABSOLUTE MAXIMUM RATINGS* Item Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to VSs Power Dissipation Storage Temperature Operating Temperature

Contextual Info: PRELIMINARY KM68B261A BiCMOS SRAM 32,768 WORD x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) • Operating Current : 170mA (1 = 100 MHz.)

Contextual Info: BiCMOS SRAM KM68BV4002 Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. R evision H istory RevNo. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target

KM68B257AJ-8

Abstract: A26cl
Contextual Info: PRELIMINARY KM68B257A BiCMOS SRAM 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CMOS): 20mA (max.) Operating KM68B257AJ-8: 185mA (max.)

IC 74142

Contextual Info: -5J SAMSUNG K M 6 8 B 1001 \0 ELECTRONICS 131,072 WORD X 8 Bit APRIL 1992 GENERAL DESCRIPTION FEATURES The KM68B1001 is a 1,048,576-bit high­ speed static random access memory organized as 131,072 words by 8 bit. The device is fabricated using Samsung's advanced BiCMOS process and designed or

Contextual Info: KM68BV4002 BiCMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 12,13,15ns{Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM68BV4002 - 1 2 : 170mA(Max.)

Contextual Info: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TTL) : 110 mA (Max.) (CMOS) : 20 mA (Max.) Operating C urrent: 170 mA (f= 100MHz) • Single S V iS ^ il^ o w e r S upply

KM68BV4002

Abstract: KM68BV4002-15
Contextual Info: KM68BV4002 BiCMOS SRAM 512K x 8 Bit High Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) » Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12 :170 mA(Max.)

KM68B4002J-12

Abstract: KM68B4002J-15
Contextual Info: KM68B4002 CMOS SRAM 512 K x 8Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max) (CMOS): 30 mA(Max.) Operating KM68B4002J-12:195mA(Max.) KM68B4002J-13:195 mA(Max.)

Contextual Info: BiCMOS SRAM KM68B1002 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM68B1002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM68B1002 uses eight common Input and output lines and has an output enable pin which operates

Contextual Info: PRELIMINARY BiCMOS SRAM KM68B4002 524,288 WORD x 8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 10ns, 12ns, 15ns • Low Power Dissipation Standby TTL : 60mA (CMOS) : 30mA Operating KM68B4002J-10 : 200mA(Max.) KM68B4002J-12 : 195mA(Max.)