KM616V1002 Search Results

Contextual Info: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)

Contextual Info: Preliminary CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

Contextual Info: KM616V1002C/CL, KM616V1002CI/CLI PRELIMINARY CMOS SRAM Document Tills 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998

Contextual Info: KM616V1002C/CL, KM616V1002CI/CLI CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev.No. History Rev. 0.0 Initial Draft Aug. 5. 1998 Prelim inary Rev. 1.0

Contextual Info: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target.

Contextual Info: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)

KM616V1002A

Abstract: SRAM sheet samsung
Contextual Info: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

KM616V1002B

Contextual Info: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History

KM616V1002A

Contextual Info: PRELIMINARY CMOS SRAM KM616V1002A, KM616V1002AI Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target.

256x16* STATIC RAM

Abstract: 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP
Contextual Info: Advanced information KM616V1002A CM O S SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 , 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)

Contextual Info: KM616V1002B/BL, KM616V1002BI/BLI CMOS SRAM 64K x 16 Bit High-Speed CMOS Static RAM{3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns Max.) • Low Power Dissipation Standby (T T l) : 30mA(Max ) (CMOS) : 50mA(Max.) 0.5mA(Max.) - L-Ver. only

KM616V1002B

Contextual Info: PRELIMINARY KM616V1002B/BL, KM616V1002BI/BLI Preliminary PRELIMINARY CMOS SRAM Document Title 64Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History

Contextual Info: for AT&T CMOS SRAM KM616V1002C/CL, KM616V1002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

KM616V1002A

Abstract: N-319
Contextual Info: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM616V1002A-12 : 200 mA(Max.)

KM616V1002A

Abstract: tba 231
Contextual Info: KM616V1002A CMOS SRAM 6 4Kx16Bi t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) O perating KM616V1002A-12 : 200 mA(Max.)

Contextual Info: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2 ,1 5 ,1 7 ,2 0 ns(M ax.) • Low Pow er Dissipation The K M 61 6 V 1 00 2 A is a 1,048,576-bit high-speed Static

Contextual Info: KM616V1002A/AL CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS): 5mA(Max.) 0.5mA(Max.) ; L-veronly

Contextual Info: KM616V1002A/AL, KM616V1002AI/ALI CMOS SRAM Document Title 64Kx16 High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Design Target.

KM616V1002C

Contextual Info: PRELIMINARY PRELIMINARY CMOS SRAM KM616V1002C/CL, KM616V1002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev .No. History Rev. 0.0 Initial Draft Draft Data

DD312

Abstract: ics 0741 D0312
Contextual Info: KM616V1002A/AL E l C iv CMOS SRAM ELECTRONICS 6 4 K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns( Max. ) • Low Power Dissipation Standby (TTL) : 20m A(M ax.) (CMOS): 5m A(M ax.) 0.5 mA(Max.) ; L-veronly

SAMSUNG CL10

Abstract: KM616V1002C
Contextual Info: for AT&T CMOS SRAM KM616V1002C/CL, KM616V1002CI/CLI Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

Contextual Info: KM616V1002A CMOS SRAM 64K x 16 Bit High-Speed C M O S Static R AM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5,17 ,2 0 ns(M ax.) • Low Pow er Dissipation Standby (TTL) : 3 0 m A(M ax.) (C M O S ): 10 m A(M ax.) Operating K M 6 1 6 V 1 0 0 2 A -1 2 : 200 m A(M ax.)

Contextual Info: CMOS SRAM KM616V1002A, KM616V1002AI 64K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES G E N ER A L DESCRIPTION Fast Access Time 12,15, 20ns(Max.) Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) O pe rati^ KM616V1002A - 1 2 : 170mA(Max.)

Contextual Info: Rr€íir'in<!‘Y CMOS SRAM KM616V1002B/BL, KM616V1002BI/BLI 64K X 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION The KM616V1002B/BL is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.