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RENESAS tft application notes

Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)

Contextual Info: Advanced Information KM616V1002A CMOS SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.) Operating : KM616V1002A-12 : 110mA (max.)

0.4mm pitch BGA

Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

256x16* STATIC RAM

Abstract: 256x16 soj 3.3v 256x16 sram KM616V1002A 44-TSOP
Contextual Info: Advanced information KM616V1002A CM O S SRAM 65,536 WORDx16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,1 7 , 20ns (max.) • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 2mA (max.)

52PTG

Abstract: R1LV1616R R1LV1616R Series uTSOP
Contextual Info: R1LV1616R Series REJ03C0101-0100Z Rev.1.00 2004.04.13 16Mb superSRAM 1M wordx16bit Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

R1LV1616RBA-5SI

Abstract: R1LV1616R R1LV1616RBA uTSOP
Contextual Info: R1LV1616RBA-5SI 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0340-0001 Rev.0.01 2007.10.31 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: Advanced Information CMOS SRAM KM6161002A 65,536 WORDx16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS) : 3mA (max.) Operating : KM6161002A-12 : 250mA (max.)

KM6161002A-12

Abstract: KM6161002AJ KM6161002A KM6161002A-15 KM6161002A-20 KM6161002AT
Contextual Info: Advanced Information CM O S SRAM KM6161002A 65,536 WORDx16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 17, 20ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS) : 3mA (max.) . Operating : KM6161002A-12 : 250mA (max.)

52-pin uTSOP

Abstract: 52-pin TSOP
Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0201Z Rev.2.01 2005.03.22 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

52-pin uTSOP

Contextual Info: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0200Z Rev.2.00 2005.11.07 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

52PTG

Abstract: R1LA1616RBG-7SI R1LA1616RBG-8SI R1LA1616RSD-7SI R1LA1616RSD-8SI
Contextual Info: Preliminary This product is under development and its specification might be changed without any notice. R1LA1616R Series REJ03C0100-0002Z Rev.0.02 2003.10.24 16Mb superSRAM 1M wordx16bit Description The R1LA1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,

MAKING A10 BGA

Abstract: 52PTG 52-pin uTSOP R1WV3216R
Contextual Info: R1W V3216R Series REJ03C0215-0100Z Rev.1.00 2004.4.13 32Mb superSRAM 2M wordx16bit Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

HN27C4096G-10

Abstract: HN27C4096G-12 HN27C4096 HN27C4096CC-10 HN27C4096CC-12 HN27C4096G-15 HN27C4096G10 HN27C4096G12
Contextual Info: HN27C4096G/CC Series 262144-wordX16-bit CMOS UV Erasable and Programmable ROM T he H itachi H N 27C 4096G /C C is a 4-M b it ultraviolet erasable and electrically programmable RO M , featu rin g high sp eed and low p o w er dissipation. Fabricated on advanced fine process

44-SOJ-400

Contextual Info: Advanced Information CMOS SRAM KM6161002A 65,536 WORDx16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15,17, 20ns max. • Low Power Dissipation Standby (TTL) : 30mA (max.) (CMOS) : 3mA (max.) Operating : KM6161002A-12 : 250mA (max.)

52-pin uTSOP

Abstract: 52-pin TSOP 52PTG R1WV3216R RENESAS tft application notes uTSOP
Contextual Info: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Contextual Info: Rev.1.1 CMOS SERIAL E2PROM S-29UXX1A Series 2 The S-29UXX1A Series is low power 1K/2K/4K-bit serial E PROM with a low operating voltage range. They are organized as 64-wordX16-bit, 128-wordX16-bit and 256-wordX16-bit, respectively. Each is capable of sequential read, where addresses are automatically incremented in 16bit blocks. The instruction code is compatible with the NM93CSXX

uTSOP

Abstract: 52-pin uTSOP
Contextual Info: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

00F1H

Contextual Info: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles

29f1615

Abstract: MX29f1615
Contextual Info: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles

324T

Abstract: 2MWx16bit
Contextual Info: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C