KL DIODE 03 Search Results

EAF 801

Abstract: eaf801 RG2 DIODE diode rg2 diode UF DC PICO Ace 25 UG DIODE 62 diode TELEFUNKEN e tube 801
Contextual Info: Netzröhre fOr GW-Heizung indirekt geheizt Parallel- oder Serienspeisung T I E E I L EAF 801 E E I I kl V E kl E r l l l l l l E I I ¡,d S Ä « i Refl,bar# HF- und ZF-Penf0,# mit D,ode connected in parallel or series Remote cutoff RF/IF-pentode with diode

AJM2

Abstract: transistor b228
Contextual Info: 2DI24OA-O55 240a -)V • ! Outline Drawings POWER TRANSISTOR MODULE 380 _M 360 ^ «.0 I ■ ^ J b : Features • B fT t! High Voltage • 7 'J — U^ • ASO t — Kl ^j Including Free W h eeling Diode Excellent Safe Operating Area • ÎÊ iS t® Insulated Type

agh 003

Abstract: M210 TM25
Contextual Info: 2DI150Z-1000 50A '< * 7 - POWER TRANSISTOR MODULE : Features • ffili/E • 7 U— High Voltage ') ' s ' ? ¥ < • ASO t — Kl*9/8i • Insulated Type • f f l i i l : A p p lic a tio n s • High Power • Including Free Wheeling Diode Excellent Safe Operating Area

KRT 30

Abstract: DIODE 8236 LT 8236 30H3 EV1277 T151 T760 T930
Contextual Info: EV1277 30a : Outline Drawings s < r7 — b 7 > Z > Z 9 * i > a . — iU POWER TRANSISTOR MODULE • it # : F e a tu re s • AflHJE High Voltage • "7 'J — >J > ? ? ' ( # — Kl*3i0c Including Free W heeling Diode Insulated Type • W & ffc ■ f f lj S s : A p p lic a tio n s

CA10Y

Contextual Info: ETG81-O5OA 30a POW ER T R A N S IS T O R M ODULE ^ Features *f <4 • 7 U - j f r - f U >• • hFE*''ifi5'-' • Jfeüïfê — Kl*3fit Including Free W heeling Diode High DC Current Gain Insulated Type ■ f f li â : A pplications • ’k .M.JlX't •

Contextual Info: 6DI100A-050 iooa l± s < n - * : ï > = L - } V ' < n — \=7 > i > 7 ,9 =£\>n.-)V : Outline Drawings POW ER T R A N S IS T O R M ODULE • 4# ^ : Features ,' V K-'v* • 7 '} —jfc-f >J > V # 4 =t— Kl*9 E • hFE*''S!nL' • Including Free W heeling Diode

Contextual Info: 6 D I 1 O M S - O 5 O O 0 A : Outline Drawings POWER TRANSISTOR MODULE F e a tu re s • hFE*''iiiC ' High DC Current Gain •J V f y f - K a S E * - ' • 7' J — High speed switching Kl *3# • Including Free W heeling Diode Insulated Type • : A p p lic a tio n s

Contextual Info: 19-0323; R ev 3 ; 8 /9 6 >kl>JX I>l/l S i n g l e +5V, F u l l y I n t e g r a t e d , 1. 2 5 G b p s L a s e r Di ode D r i v e r Description C om plem entary enable inputs allow the MAX3261 to interface with open-fiber-control architecture— a feature not found in other 1,25Gbps laser diode drivers.

2X40

Abstract: 87CNQ020A FST8115 FST8120 609G
Contextual Info: Schottky Diode FST8115, FST8120 m m •FAN 2 -P L C S P, 1 2 3 Dim. Inches 1 2 3 Common Cathode A C E F G H J K L M N P 1 2 3 A=Common Anode M— k Ci Kl I I _L i o 3 PINS eq sp at .200 — Ô i i—L H — *^ Jj Ô Ô 1 2 3 D=Doubler M illim eter Minimum

2M84G

Contextual Info: SKM 195GB066D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 KL M8 E8 .O 2 JXL M8 E8SZ .03+ 2 KLM8B * 5(+ %41(/<-+( +=(0-@-(G CQQ 7 KCL F .0 2 YQ M8 KQQ F [QQ F ¥ KQ 7 .O 2 JLQ M8 C `+ .0 2 KL M8 KQQ F .0 2 YQ M8 J]Q F [QQ F J[QQ F KQQ F W [Q NNN b JXL

Contextual Info: SKiM455GD12T4D1 '- KL M6P @,3+99 21.+*;<9+ 9=+-<A<+F Absolute Maximum Ratings Symbol Conditions IGBT 567I 'O ) M6 $6 'O ) JLQ M6 $6DV JKQQ 5 QQ E '.+019<,S ) TQ M6 UQL E JULQ E Y KQ 5 JQ ^9 '.+019<,S ) KL M6 K`L E '.+019<,S ) TQ M6 KJL E aQQ E $6DV ) UN$6WXV

RF5RD501

Abstract: rf5rd301 TRANSISTOR 501 EK-032-8906 dc converter regulator high current converter circuit diagram switching regulator circuit CMD-6L
Contextual Info: PRELIMINARY EK-032-8906 RF5RD301/501 STEP-UP/STEP- DOWN DC/DC CONVERTER RF5RD301/501 are compact DC/DC converter ICs developed with the CMOS process technology. When the input voltage is sufficiently high, they work as series regulators. When the input voltage falls

TDH-7070

Abstract: two change over relay 8 pin
Contextual Info: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and

Contextual Info: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and

Contextual Info: FF 300 R 06 KL 2 Thermische Eigenschaften Transistor Transistor RthJC Elektrische Eigenschaften Electrical properties Höchstzulässiqe Werte Maximum rated values R thC K V ces 600 V b 300 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module

tv remote control system Toshiba

Contextual Info: TO SH IB A TC9243P/F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9243P, TC9243F INFRARED REMOTE CONTROL SIGNAL TRANSMISSION LSI The TC9243P, TC9243F are infrared remote control signal transmission LSI which is suited for remote control of

j329

Abstract: transistor sb 772 TRANSISTOR b 772 p jft 1411 2SJ329 GI 242 F108 diode diode lt 0236 F108 NEC 2415
Contextual Info: M 0 S J F ^ f M ^ / \ Or7 - M O S FET M O S Field Effect P ow er Transistor P ^ ^ t ^ l / / \ o7 - M 0 S I 2 S J 3 2 9 Ü P ? + ^ ;U / \ “ 7 - M 0 S F E T Ü F E T T * < X - f 'y ^ > ^ Î $ 1 4 * ^ # n T Î 3 U , ;& Î l 7 7^ 5 l i L X - ^ X -f y ^ i » D C - D C = l > / < - $ IC ftilT '- fo

Contextual Info: 7 THIS DRAWING 15 UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 4 ,19 DIST LOC ALL RIGHTS RESERVED. AA REVISIONS 22 LTR DESCRIPTION REV; EC 0502-0351-98 LED POSITION -1 5. 24- LED POSITION 1 D 2. 54 10 0 ] TY P ICA L 3.18 — [. 1 25]

philips cfl internal circuit

Abstract: soft start and stop circuit 555 timer self oscillating CFL lamp SELF OSCILLATING HALF BRIDGE DRIVER IC philips cfl UBA2024P SC-504-8 555-timer Self Oscillating Circuit HIGH-VOLTAGE HALF BRIDGE DRIVER
Contextual Info: INTEGRATED CIRCUITS DATA SHEET UBA2024 Half-bridge power IC for CFL lamps Product specification Supersedes data of 2003 Aug 13 2004 Feb 03 Philips Semiconductors Product specification Half-bridge power IC for CFL lamps UBA2024 FEATURES GENERAL DESCRIPTION

12v class d amplifier 25W ta2020-020

Abstract: TRIPATH TA2020 TA2020 TA2020-020 KL Series capacitor 180uf 200 v d703 TRIPATH C451 C451B
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TA2020-020 STEREO 20W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY Technical Information Revision 7.1 – March 2005 GENERAL DESCRIPTION The TA2020-020 is a 20W (4Ω) continuous average per channel Class-T Digital Audio Power Amplifier IC

d206 diode

Abstract: TRIPATH TECHNOLOGY diode d205 2w mono audio amp Panasonic amidon 1k ohm trim pot R212 VN10 vishay 100w audio amplifier circuit diagram class D TRIPATH TC2001
Contextual Info: Tr i path Technol ogy, I nc. - Technical Information EB-TK2150-1 EB-TK2150-2 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TK2150 EVALUATION BOARD Technical Information – Board Rev. 1.0 Revision 1.0 – November 2002 GENERAL DESCRIPTION The EB-TK2150 is a stereo evaluation board based on the TK2150 digital audio power

024X12

Contextual Info: PF301-03 SMC6110FSeries CMOS 4BIT SINGLE CHIP MICROCOMPUTER •R O M 1K WORD #LC D driver confined #Low power dissipation •DESCRIPTION Th e SMC6110F Series is a C M O S 4-bit single chip microcomputer. It incorporates a 1,024X 12 bits ROM, a 4 8 X 4 bits RAM, a 9 6 segment LCD driver, restart with timer and key, and interrupt by key. The SMC6110F

self oscillating CFL lamp

Abstract: MO-001 UBA2024 UBA2024P Self Oscillating Circuit
Contextual Info: UBA2024 Half-bridge power IC for CFL lamps Rev. 03 — 16 October 2008 Product data sheet 1. General description The UBA2024P is a high-voltage monolithic integrated circuit. The Integrated Circuit IC is designed for driving Compact Fluorescent Lamps (CFL) in a half-bridge configuration.

2SK2385

Abstract: S2510
Contextual Info: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 r 4V Gate Drive