KHB1 Search Results
KHB1 Datasheets (12)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KHB104SV1AA-G81 |
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10.4 inch STN transflectiver AVGA color RT4060 | Scan | 929.63KB | 32 | ||
| KHB104SV1AA-G91 |
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Flat Panel Display | Scan | 903.53KB | 31 | ||
| KHB104SV2AA-G81 |
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Flat Panel Display | Scan | 920.01KB | 31 | ||
| KHB104SV2AA-G91 |
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Flat Panel Display | Scan | 928.34KB | 31 | ||
| KHB104VG1BB-G92 |
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Flat Panel Display | Scan | 933.3KB | 32 | ||
| KHB1748VHS-F00 |
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DC Fans, Fans, Thermal Management, BLOWER 48VDC BALL TACH 175X54MM | Original | 4 | |||
| KHB1795A01 | Korea Electronics | TD-SCDMA | Scan | 14.29KB | 1 | ||
| KHB1890B01 | Korea Electronics | DECT | Original | 33.72KB | 1 | ||
| KHB1890C01 | Korea Electronics | DECT | Original | 33.09KB | 1 | ||
| KHB1906A01 | Korea Electronics | PHS | Scan | 14.3KB | 1 | ||
| KHB1D0N60D | Korea Electronics | N CHANNEL MOS FIELD EFFECT TRANSISTOR | Original | 65.34KB | 6 | ||
| KHB1D0N60I | Korea Electronics | N CHANNEL MOS FIELD EFFECT TRANSISTOR | Original | 65.34KB | 6 |
KHB1 Price and Stock
Eaton Cutler-Hammer E34KHB1Pushbutton; |Eaton Cutler Hammer E34KHB1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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E34KHB1 | Bulk | 1 |
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E34KHB1 | Bulk | 4 Weeks | 1 |
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Eaton Cutler-Hammer E34KKHB1Kysw 3Ps Kyl Spr-L 60 C3 Hrz; |Eaton Cutler Hammer E34KKHB1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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E34KKHB1 | Bulk | 1 |
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E34KKHB1 | Bulk | 4 Weeks | 1 |
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KEMET Corporation KHB102KN28CGFWACap, Ceramic Disc, 1000Pf, 1Kv, Radial; |Kemet KHB102KN28CGFWA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KHB102KN28CGFWA | Tape & Reel | 4,000 |
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KEMET Corporation KHB101KN24CGAAACap, Ceramic Disc, 100Pf, 1Kv, Radial; |Kemet KHB101KN24CGAAA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KHB101KN24CGAAA | Tape & Reel | 4,000 |
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KHB101KN24CGAAA | 13,060 |
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KEMET Corporation KHB102KN28CGGWACap, Ceramic Disc, 1000Pf, 1Kv, Radial; |Kemet KHB102KN28CGGWA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KHB102KN28CGGWA | Bulk | 3,000 |
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KHB1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
1D0N60
Abstract: KHB1D9N60I KHB1D0N60I khb1d9n60 DPAK khb*9n60 D-PAK package DPAK datasheet laser marking 5
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khb1d0n60i1d0n60khb1d9n60ikhb1d9n60+6 | |
10101DCContextual Info: SEMICONDUCTOR KHB1D2N80D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and |
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khb1d2n80d/ikhb1d2n80d10101dc | |
MOSFET 600V 1AContextual Info: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power |
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khb1d0n60gmosfet 600v 1a | |
KHB1D9N60IContextual Info: SEMICONDUCTOR KHB1D9N60D1/I1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode |
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khb1d9n60d1/i1khb1d9n60i | |
khb1d9n60
Abstract: KHB1D9N60I khb1d9n60d khb*9n60 RL158 PUT2 khb*1D9N60
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khb1d9n60d/ikhb1d9n60dkhb1d9n60khb1d9n60i+4 | |
KHB1890C01Contextual Info: DIELECTRIC DEVICE KHB1890C01 TECHNICAL DATA TYPICAL PASSBAND CHARACTERISTIC DIELECTRIC BAND PASS FILTER DIMENSION 4 2 60 30 5.6 20 3.8 40 2.3 10 4.3 20 RETURN LOSS [dB] ATTENUATION [dB] 1640 1890 1.5 1 1.8 MARKER 2 1.89GHz 2140 Frequency [MHz] _ 0.1mm Dimension Tolerance : + |
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khb1890c0189ghz1680mhz1790mhz+2 | |
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Contextual Info: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode |
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khb1d9n60d/i | |
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Contextual Info: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power |
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khb1d0n70g | |
KHB1D0N60D
Abstract: KHB1D0N60I
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Original |
khb1d0n60d/ikhb1d0n60d115mhdi/dt300a/+1 | |
diode TA 20-08Contextual Info: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power |
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khb1d0n60gdiode ta 20-08 | |
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Contextual Info: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode |
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khb1d9n60d/i | |
KHB1D9N60Contextual Info: SEMICONDUCTOR KHB1D9N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode |
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khb1d9n60d/ikhb1d9n60 | |
KHB1D0N60D
Abstract: KHB1D0N60I
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khb1d0n60d/ikhb1d0n60dkhb1d0n60i | |
KHB1D9N60D
Abstract: khb1d9n60 KHB1D9N60I khb*9n60
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khb1d9n60d/ikhb1d9n60dkhb1d9n60khb1d9n60i+1 | |
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Contextual Info: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power |
Original |
khb1d0n70gdrain-sourceg12fig13fig14+1 | |
1A 700V MOSFETContextual Info: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power |
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khb1d0n70gvolt560v1a 700v mosfet | |
KHB1D9N60I
Abstract: KHB1D9N60D khb1d9n60 109NC
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khb1d9n60d/ikhb1d9n60ddi/dt100a/khb1d9n60i+2 | |
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Contextual Info: SEMICONDUCTOR KHB1D2N80D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and |
Original |
khb1d2n80d/ikhb1d2n80d170mhdi/dt300a/ | |
RG 2006 10A 600VContextual Info: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and |
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khb1d0n60d/ikhb1d0n60drg 2006 10a 600v | |
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Contextual Info: SEMICONDUCTOR KHB1D0N60G TECHNICAL DATA N-Ch Planer MOSFET General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power |
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khb1d0n60g | |
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Contextual Info: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and |
Original |
khb1d0n60d/i | |
KHB1D0N60D
Abstract: KHB1D0N60I
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Original |
khb1d0n60d/ikhb1d0n60dkhb1d0n60i | |
1D0N60
Abstract: KHB1D0N60D 1D0N60D 1D0N6 dpak DSA0010423 D-PAK package marking laser dpak Package
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khb1d0n60d1d0n601d0n60d1d0n6+6 | |
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Contextual Info: SEMICONDUCTOR KHB1D0N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and |
Original |
khb1d0n60d/ikhb1d0n60dkhb1d0n60i115mh | |