KERS Search Results

SN54180

Abstract: 1N3064 SN7418 SN74180
Contextual Info: CIRCUIT TYPES SN54180, SN74180 8-BIT O D D / E V E N PA R ITY GENERA TO RS/ CHEC KERS TIL MSI W F LA T PACKAGE TOP VIEW logic Ç vcc - INPUTS - ® ® ® ® ® ® TR U T H T A B L E 0 THRU 7 EVEN If t ! 1 Vcc 3 14 13 12 6 7 EVEN 2 11 I O U TPUTS INPUTS

KERSEMI

Contextual Info: KSM9N25C/KSMF9N25C KERSEMI ELECTROIC CO.,LTD. 250V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 8.8A, 250V, RDS on = 0.43Ω @VGS = 10 V Low gate charge ( typical 26.5 nC) Low Crss ( typical 45.5 pF) Fast switching 100% avalanche tested

kers

Contextual Info: -250 & 42-500_ DOUBIE BALANCED M KERS DMM -4 DMM 5 to l0 0 0 M H z /+ 1 3 to + 2 4 cBm IO /SM A C am eütm s DMM-4 Schem atic PRINCIPAL SPECIFICATIONS RF/LO LO Drive, Operating Model Frequency, dBm, IF, Range, Number MHz Norn. MHz MHz DMM-4-250 5 - 500

Contextual Info: FGA25N120AN TO-3P Features • High speed switching • Low saturation voltage : VCE sat = 2.5 V @ IC = 25A • High input impedance General Description Employing NPT technology, Kersemi AN series of provides low conduction and switching losses. The AN series offers an solution for application such as induction

Contextual Info: KSM61N20 200V N-Channel MOSFET TO-220 Features • 61A, 200V, RDS on = 0.041Ω @VGS = 10 V • Low gate charge ( typical 58 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe,

kers

Contextual Info: DMT-2C -4000_ DOUBIE BAIANCED M KERS 2 5 to 6 5 G H z/+ 7 to + 1 0 d E 3 m ID /la w la s s /H jghP erihm anas /H em ieti-:TO -8 P&rk:>g& PRINCIPAL SPECIFICATIONS RF/LO Freq., MHz Model Number DMT-2C-4000 IF Freq., MHz 2500 - 6500 DC - 2500 Operating

hi fi speaker

Contextual Info: Communication iCs Power unit 1C for pagers BH6113FV T h e B H 6 1 1 3 F V is a p o w e r u n it iC w ith a d riv e r fo r V F M s w itc h in g re g u la to r c o n tro lle r s a n d v ib r a to r s , L E D s, a n d sp e a kers, a n d a b u ilt-in b a tte ry e je ctio n se n so r.

Contextual Info: TL431 KERSEMI ELECTRONIC CO.,LTD. PROGRAMMABLE VOLTAGE REFERENCE Z DESCRIPTION TO92 The TL431 is a programmable shunt voltage reference with guaranteed temperature stability over the entire temperature range of operation. The output voltage may be set to any value

Contextual Info: SN54LS280, SN54S280, SN74LS280, SN74S280 9-BIT ODD/EVEN PARITY GENERATORS/KERS SDLS152 – DECEMBER 1972 – REVISED MARCH 1988 Copyright  1988, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments

P122-5N

Abstract: grafik MAX232 smd 1x20 lcd P122-5NLED SMD code ZB RS232 MAX232 smd Z80 ADC SMD Widerstand IC1520-2PGH
Contextual Info: EA P122-5NLED 12.99 LCD- GRAFIK MODUL 122x32 PIXEL MIT LED-BELEUCHTUNG 14 84 76 10,2 9,0 4x 2,5 19x 2,54 20 20,5 27,4 18,5 C 15,6 A 36 44 23,5 1 EA KIT122-xxx 53,6 60,5 65,7 79 alle Maße in mm TECHNISCHE DATEN * * * * * * * KONTRASTREICHE SUPERTWIST ANZEIGE BLAU

alps 503 a

Abstract: teradyne lasar tom jones ALPS LSI Technologies alps 503 800-208 10K compass ic Teradyne ACEO Technology
Contextual Info: 30 COMPANY NAME Accolade Design Automation ACEO Technology, Inc. Acugen Software, Inc. Aldec ALPS LSI Technologies, Inc. Alta Group Aptix Corporation Aster Ingenierie S.A. Cadence Capilano Computing Chronology Corporation CINA-Computer Integrated Network Analysis

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

B083D

Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Contextual Info: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik

information applikation mikroelektronik

Abstract: information applikation tda 4100 a4100d "Mikroelektronik" Heft mikroelektronik Heft meuselwitz FM -piezofilter Halbleiterbauelemente DDR A244D
Contextual Info: m o tk ^ ^ e le lK to n c in il-« Inform ation Applikation i m ö O ^ i r ^ e l B l - c b n Inform ation Applikation 3 9 H E F T A 4 10 0 s D AM-FM-Empfänger-IS + A 45 + 1 0 D P LL-Stereodekoder-IS + + Empfängerkonzept veto hatotaftsarvwerk frankfurC/c

Contextual Info: KSMD8P10TM_F085 100V P-Channel MOSFET TO-252 Features • • • • • • • • -6.6A, -100V, RDS on = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability Qualified to AEC Q101

Contextual Info: KSMD7N30 / KSMU7N30
   TO-252 TO-251   % % % % % % & &' *+
,) -Ω.*,/)* 0   1 /( 2 01 /32     /)4 !  5 !!$  " 
  
 

Contextual Info: KSM14N30
  
   % % % % % % &' '  *+,
-* ./Ω0+-&*+ 1   2 )* 3 12 .)3     &*4 !  5 !!$  " 
  
    

Contextual Info: KSMF10N20
  
   & & & & & & ' % *+,
-* .'Ω/+-0*+ 1   2 0. 3 4 12 0.4     0*5 !  6 !!$  " 
  
    

Contextual Info: KSMD3N25 / KSMU3N25 250V N-Channel MOSFET TO-252 TO-251 Features • • • • • • 2.4A, 250V, RDS on = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSMD19N10L / KSMU19N10L 100V LOGIC N-Channel MOSFET TO-252 TO-251 Features • • • • • • 15.6A, 100V, RDS on = 0.1Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability

FQP90N10

Contextual Info: KSM90N10V2/KSMF90N10V2 100V N-Channel MOSFET • • • • • • TO-220F TO-220 Features 90 A, 100V, RDS on = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSM9N50C/KSMF9N50C 500V N-Channel MOSFET TO-220 TO-220F Features • • • • • • 9 A, 500V, RDS on = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: KSMD5N50 / KSMU5N50
   TO-252 TO-251   $ $ $ $ $ $ % &'& *
+, -Ω.)+,() /   0 ,% 1 /0 - &1     ,(2 !  3 !!4  " 
   

Contextual Info: KSM7N10L 100V LOGIC N-Channel MOSFET Features • • • • • • • • TO-220 7.3A, 100V, RDS on = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating