KE39 Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

diode 1.5 ke 36 ca

Abstract: KE200A KE 76 DIODE diode KE43A KE 75 DIODE KE250A ke68A diode 1.5KE-160CA diode KE ke82a
Contextual Info: 1.5 KE 6.8 . 1.5 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 1500 W Nominal breakdown voltage Nominale Abbruch-Spannung

Contextual Info: P6KE6.8,A thru MOTOROLA P6KE200,A Z E N E R O V E R V O LT A G E T R A N S IE N T S U P P R E S S O R ZE N E R O V ER V O LTA G E T R A N S IE N T S U P P R E S S O R S T h e P 6 K .E 6 . 8 s e r i e s is d e s i g n e d to p r o t e c t v o l t a g e s e n s i t i v e

P6KE27A diode

Abstract: KE300
Contextual Info: P6 KE 6.8 . P6 KE 440CA, P6 KE520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

DIODE 255 KE

Abstract: P6KE27A diode DO-204AC KE10 KE10A
Contextual Info: P6 KE 6.8 . P6 KE 440CA, P6 KE520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung

diode 1.5 ke 107 ca

Abstract: KE200A KE51A DO-204AC KE10 KE10A KE11 diode 1.5 ke 36 ca
Contextual Info: P4 KE 6.8 . P4 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 400 W Nominal breakdown voltage Nominale Abbruch-Spannung

ke39

Contextual Info: ! MicrosemiCorp. \ The diode experts SANTA A N A CA SCOTTSDALE, A Z For more information call: 602 941-6300 P4KE6.8 thru P4KE400 TRA N SIEN T ABSO RPTIO N ZEN ER Features • • • • • ECONOM ICAL SERIES A VAILABLE IN BOTH UNIDIRECTIONAL AND BIDIRECTIONAL CONSTRUCTION

Contextual Info: P6 KE 6.8 . P6 KE 440CA, P6 KE 520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung

ke51a

Abstract: KE 76 DIODE 6BL7 diode KE 300 ke300a P4 diode diode 1.5 ke 36 ca KE160A KE200A KE39
Contextual Info: P4 KE 6.8 . P4 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 400 W Nominal breakdown voltage Nominale Abbruch-Spannung

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

DO-204AC

Abstract: KE10 KE10A KE11
Contextual Info: P4 KE 6.8 . P4 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 400 W Nominal breakdown voltage Nominale Abbruch-Spannung

Contextual Info: 1.5 KE 6.8 . 1.5 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 1500 W Nominal breakdown voltage Nominale Abbruch-Spannung

Contextual Info: DEARBORN MIL STYLE FILM CAPACITORS MIL-C-19978/09/10 HERMETICALLY-SEALED CAPACITORS TO MILITARY SPECIFICATION MiL-C-19978 /09 /10 MIL STYLE CQR09, CQR12 PART NUMBERING SYSTEM CQR09 CQR12 A 1 K C 392 G 3 L FAILURE RATE LEVEL. 90% CONFIDENCE LEVEL L M P R =

diode 1.5 ke 36 ca

Abstract: diode KE KE200A 520C DO-204AC KE10 KE10A
Contextual Info: P6 KE 6.8 . P6 KE 440CA, P6 KE 520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

2SK147BL

Abstract: 2SK147GR NF5102 LM3661TL-1.40 BSV79 BSV80 diode 6AB 2n4093 motorola 2N4095 2SK147-G
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS 9f. (V) (A) Min (S) Max VGS(off) Max (V) IGSS Max (A) C. Max (F) PD Max (W) Derate at TOper (WrC) eCl Max Package Style N-Chann I JFETs, (Co nt' d) 5 10 15 20 25 30 35 40 45 50 Jl13A MPF4858

NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Contextual Info: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership

Contextual Info: DEARBORN MIL STYLE FILM CAPACITORS MIL-C-19978/11 HERMETICALLY-SEALED CAPACITORS TO MILITARY SPECIFICATION MIL-C-19978 / I I MIL STYLE CQR13 P A R T N U M B E R IN G S Y S T E M CQR13 A 1 K C 392 - FAILURE RATE LEVEL. L = 9 0 % C O N F ID E N C E LE V E L

diode 1.5 ke 36 ca

Abstract: KE200A KE 75 DIODE KE 76 DIODE ke39 KE10 KE10A KE11 KE11A KE-25
Contextual Info: 1.5 KE 6.8 . 1.5 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 1500 W Nominal breakdown voltage Nominale Abbruch-Spannung

P6KE33C

Abstract: 6KE250
Contextual Info: P6KE6.8 A P6KE6.8C(CA) THRU THRU P6KE440(A) P6KE440C(CA) GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE -6.8 TO 440 VOLTS 600 WATT PEAK POWER DO-15 Plastic package has Underwrites Laboratory Fiammability Classification 94V-0 Glass passivated chip junction in DO-15 Package

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.