KE DIODE ON Search Results

KE DIODE ON

Abstract: diode KE KE-01 diode KE 01
Contextual Info: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations

Contextual Info: SKM 100GB063D 7% U OV WH+ / * 00 ,3&)4?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 7X U OV WH :H 7X U MVN WH :H]^ ZNN G M[N L 7%'0) U ¥N WH MNN L ONN L ` ON G MN d0 7%'0) U OV WH MNN L 7%'0) U eN WH ¥V L ONN L ¥ON L ONN L 8 fN EEE g MVN

Multimeter fluke 23

Contextual Info: 27 Multimeter Users Manual Mode d'Emploi Bedienungs-Handbuch Manuale d'Uso Manual de Uso For IEC 61010 CAT III Meters Only October 1998 Rev.2, 12/03 1998-2003 Fluke Corporation. All rights reserved. Printed in U.S.A. All product names are trademarks of their respective companies.

SED40KE

Abstract: "Schottky Rectifiers"
Contextual Info: HIGH VOLTAGE SCHOTTKY RECTIFIERS Solid State Devices, Inc. SSDI is excited to release its new high voltage, low VF schottky rectifiers for the military and aerospace industries. The examples below feature 40 - 80 amp, 150 - 200 volt schottky rectifiers with TX, TXV, & S level screening available. Screening is based on MIL-PRF-19500. Screening flows are available on request. Contact us today for samples or more information about our high reliability schottky devices.

tidm15

Abstract: matrices TIDM268 MONOLITHIC DIODE matrices DM268 DM255 G-367 monolithic waveform generator
Contextual Info: S ERIES TIDM 1, T ID M 2 D IO D E M A T R IC E S SERIES T ID M 1 ,T ID M 2 BULLETIN NO. DL-S 7111434, JANUARY MONOLITHIC DIODE MATRICES For Application As • Programmable Read-Only Memories • Frequency Generators • Alphanumeric Character Generators •

LM78L08

Abstract: diode 1.5 ke 36 ca LM78L12 LM78L09 LM78L15 LM78L06 LM78L05 LM78L10 LM78L18 LM78L24
Contextual Info: LM78L08 FIXED VOLTAGE REGULATOR P OS ITIVE 3-TERMINAL 0.1A P OS ITIVE VOLTAGE REGULATORS This se rie s of fixe d-volta ge monolithic inte gra te d-circuit volta ge re gula tors is de s igne d for a wide ra nge of TO- 92 a pplica tions. The s e a pplica tions include on-ca rd re gula tion for

LM78L06

Abstract: LM78L12 LM78L09 LM78L24 Voltage Regulator LM78L15 LM78L10 LM78L05 LM78L08 LM78L15 LM78L18
Contextual Info: LM78L06 FIXED VOLTAGE REGULATOR P OS ITIVE 3-TERMINAL 0.1A P OS ITIVE VOLTAGE REGULATORS This se rie s of fixe d-volta ge monolithic inte gra te d-circuit volta ge re gula tors is de s igne d for a wide ra nge of TO- 92 a pplica tions. The s e a pplica tions include on-ca rd re gula tion for

LM78L05

Abstract: LM78L09 LM78L12 LM78L18 LM78L24 LM78L06 LM78L08 LM78L10 LM78L15 LM78LXX
Contextual Info: LM78L05 FIXED VOLTAGE REGULATOR P OS ITIVE 3-TERMINAL 0.1A P OS ITIVE VOLTAGE REGULATORS This se rie s of fixe d-volta ge monolithic inte gra te d-circuit volta ge re gula tors is de s igne d for a wide ra nge of TO- 92 a pplica tions. The s e a pplica tions include on-ca rd re gula tion for

sfb455

Abstract: sn76881 diode 937 ke sn7689 sn76751n 752N
Contextual Info: V iT e x a s I n strum en ts LIMITED MAMUFACTUMM6 SPECIFICATION APRIL 2, 1980 TEXAS INSTRUMENTS LIMITED TENTATIVE SPECIFICATION 30 CHANNEL REMOTE CONTROL TRANSMITTER RES, 002 93 2 SN76742N SN76752N FORMERLY SN76831N16/832N16 THIS DESCRIPTION IS INTENDED ONLY FOR ENGINEERING EVALUATION

Contextual Info: P6 KE 6.8 . P6 KE 440CA, P6 KE 520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung

diode 1.5 ke 36 ca

Abstract: diode KE KE200A 520C DO-204AC KE10 KE10A
Contextual Info: P6 KE 6.8 . P6 KE 440CA, P6 KE 520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung

diode 1.5 ke 107 ca

Abstract: KE200A KE51A DO-204AC KE10 KE10A KE11 diode 1.5 ke 36 ca
Contextual Info: P4 KE 6.8 . P4 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 400 W Nominal breakdown voltage Nominale Abbruch-Spannung

diode 1.5 ke 36 ca

Abstract: KE200A KE 76 DIODE diode KE43A KE 75 DIODE KE250A ke68A diode 1.5KE-160CA diode KE ke82a
Contextual Info: 1.5 KE 6.8 . 1.5 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 1500 W Nominal breakdown voltage Nominale Abbruch-Spannung

P6KE27A diode

Abstract: KE300
Contextual Info: P6 KE 6.8 . P6 KE 440CA, P6 KE520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung

TCD1254GFG(8Z)

Contextual Info: SKM 75GB063D 8% W PX YH+ / * 00 ,4&)5?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 8Z W PX YH :H 8Z W NXO YH :H^_ ¥OO G NOO L 8%'0) W ]X YH ]X L NXO L a PO G 8Z W NPX YH NO f0 8%'0) W PX YH ]X L 8%'0) W gO YH XO L NXO L 8Z W NXO YH hhO

DO-204AC

Abstract: KE10 KE10A KE11
Contextual Info: P4 KE 6.8 . P4 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 400 W Nominal breakdown voltage Nominale Abbruch-Spannung

Contextual Info: 1.5 KE 6.8 . 1.5 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 1500 W Nominal breakdown voltage Nominale Abbruch-Spannung

Contextual Info: 1.5 KE 6.8 . 1.5 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 1500 W Nominal breakdown voltage Nominale Abbruch-Spannung

diode 1.5 ke 36 ca

Abstract: KE200A KE 75 DIODE KE 76 DIODE ke39 KE10 KE10A KE11 KE11A KE-25
Contextual Info: 1.5 KE 6.8 . 1.5 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 1500 W Nominal breakdown voltage Nominale Abbruch-Spannung

ke51a

Abstract: KE 76 DIODE 6BL7 diode KE 300 ke300a P4 diode diode 1.5 ke 36 ca KE160A KE200A KE39
Contextual Info: P4 KE 6.8 . P4 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 400 W Nominal breakdown voltage Nominale Abbruch-Spannung

Contextual Info: SCHOTTKY BARRIER DIODE FCQ10A04 i0A /40v FEATURES o Sim ila r to T O -2 2 0 A B C ase o F u lly M olded Isolatio n o D u a l Diodes - Cathode Comm on o L o w F orw ard V o lta g e Drop o L o w P ow er L oss, H igh E fficien cy o H igh Su rg e C apability o W ire-Bond ed technology

Contextual Info: IRL510 A d van ced Power MOSFET FEATURES B ^ dss - 100 V ♦ Avalanche Rugged Technology ^DS on = 0 .4 4 Q ♦ Rugged Gate Oxide Technology lD ♦ Logic-Level Gate Drive = 5.6 A ♦ Lower Input Capacitance ♦ Improved Gate Charge T O -2 2 0 ♦ Extended Safe Operating Area

Contextual Info: IRF720A A d van ced Power MOSFET FEATURES B ^dss - 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = "I 3.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

Contextual Info: IRL510A Advanced Power MOSFET FEATURES B ^ dss - 100 V ♦ Avalanche Rugged Technology ^DS on = 0 .4 4 Q ♦ Rugged Gate Oxide Technology lD ♦ Logic-Level Gate Drive = 5.6 A ♦ Lower Input Capacitance ♦ Improved Gate Charge T O -2 2 0 ♦ Extended Safe Operating Area