KD PNP Search Results

sk3018

Abstract: SK3027/130 SK3083 SK3024 SK3004 SK3004/102A SK3012/105 sk3123 SK3115/165 SK3115
Contextual Info: THOMSON/ DISTRIBUTOR DTE D | =]GEbfl73 □QG33bl 3 | . T ' 2 1 -O l PERFORMANCE DATA 3ipolar Transistors LIM IT C O NDITIONS CH AR ACTER ISTIC S BR EA KD O W N V O LT A G E RCA Typ« Polarity and : Material Device Dissi­ pation Collector Current Contin­

2SC3873

Contextual Info: Power Transistors 2SG3873 2S C 3873 Silicon PNP Triple-Diffused Planar Type P a c k a g e D im e n s io n s H igh B re a kd o w n V o lta g e , H igh S p e e d S w itch in g Unit ' mm • F e a tu re s 5.2max. 15.5max 6.9min • High speed switching 3.2 • High collector-base voltage V cbo

MM4005

Abstract: MM4007 MM4006
Contextual Info: MM4005 SILICON thru MM4007 PNP SILIC O N A M P LIF IE R T RA N SISTO R S PNP SILIC O N A N N U LA R A M PLIF IER . . . designed fo r use in general-purpose am plifier applications. • C ollector-Em itter Bre a kd ow n V oltage @ I q - 10 m A d c B V c E O = 6 0 V d c (M in ) - M M 4 0 0 5

TIC COL 02

Abstract: MM4037 TC-512 FYJA
Contextual Info: MM4037 SILICON PNP S IL IC O N T R A N S IS T O R PNP S IL IC O N A N N U L A R A M P L IF IE R T R A N S IS T O R . . . designed for use in general-purpose am plifier and sw itching applications. C olle ctor-Em itte r B re a kd o w n V o ltage — B V c E O = 4 0 V d c (M in ) @ I q = 1 0 m A d c

BC461

Abstract: JCASE BC441
Contextual Info: BC 394 THERMAL DATA The rm a l resistance ¡u n ctio n -ca se The rm a l resistance ju n c tio n -a m b ie n t V BR CBO C o lle cto r-b a se b re a kd o w n voltage 0e =0) l c = 100 V CEO (sus)* C o lle c to r-e m itte r sustaining voltage Ob = 0 ) V(BR)EBO E m itte r-b a se

MM5000

Abstract: MM439 germanium transistor pnp Germanium mesa
Contextual Info: MM439 SILICON A d v a n c e In fo r m a tio n PNP SILICON R F /V H F A M P L IFIE R T R A N SIST O R PNP SILICO N A N N U L A R R F /V H F A M P L IF IE R T R A N SIST O R . designed fo r use In R F an d V H F am plifie r applications. C ode ctor-E m itte r B re a kd o w n V oltage —

5000LX

Abstract: 1-10V
Contextual Info: KD CZLD 穿雾型激光检测 器 一应用： KDCZLD 型穿雾型激光 检测器是一种对射式高灵敏度检测装置。主要用于冶金工业自动控制系统 中，环境特别恶劣，水雾特别严重的板坯到位检测或计数、控制，起自动控制开关作用。

L43F

Contextual Info: O nTM H ecKN e 6 e c K O H T a K T H b ie H o M e H K n a i y p a i* B b iK J iio n a T e jiM n a p a M e T p b i H a n p n > K e H M e n iiT a H M n n o c T O fiH H o r o T O K a 4 o d Tnnopa3Mep C x e M b i noAK^ KD H eH M « I* X o O c b K opn yc i/ i c n o c o ö

Contextual Info: PNP Silicon Planar Medium Power Transistors Z TX 554 ZTX 555 ZTX 556 ZX557 FEATURES • • • • • 1W p o w e r d issipation a t T amb = 2 5 ° C V oltages up to 3 0 0 V Excellent gain c h a ra cte ristics up to 3 0 0 m A L o w sa tu ra tio n voltages

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistor BFN 22 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 23 PNP

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - FEBRUARY 1996 FEATURES * * H igh V CE0 L o w s a tu ra tio n vo lta g e C O M PLEM ENTAR Y TYPE: - BSP20 PAR TM ARKING DETAIL: - BSP15 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L VALUE UNIT C o lle c to r-B a s e V o lta g e

Contextual Info: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BCW30 SMALL SIGNAL PNP TRANSISTORS Type M arking B C W 30 C2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND

Contextual Info: SGS-THOMSON RfflD0lsi i[LiCTI3®[i!lDS$ BCP52/53 MEDIUM POWER AMPLIFIER AD VA N C E DATA . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1 - NOVEMBER 1998 FEATURES * 500 V o lt VCE0 * 150m A c o n tin u o u s c u rre n t * Ptot = 2 W a tt PARTM ARKING D E T A IL - X <VC FZT560 ABSOLUTE M AXIM UM RATINGS. PARAMETER VALUE UNIT VcBO

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - AUGUST 1995 _ FEATURES vCE0 * H igh * L o w s a tu ra tio n vo lta g e CO M PLEM ENTAR Y TYPE: -B S P 1 9 PAR TM ARKING DETAIL: - BSP16 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C o lle c to r-B a s e V o lta g e

Contextual Info: rz7 Ä T# SGS-m0MS0N bcs57 r a o e œ iiL iie r a * ® BC858 SMALL SIGNAL PNP TRANSISTORS Type M a rk in g B C 8 57 A 3E B C 857B 3F B C 8 58 A 3J B C 858B 3K . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

Contextual Info: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - AUGUST 1995 Q FEATURES * S u ita b le fo r AF d riv e rs and o u tp u t stages * H igh c o lle c to r c u rre n t and L o w VCE sat C O M PLEM ENTARY TYPE BCP55 PARTM ARKING DETAILS - BCP52 B C P 5 2 - 10

2N6731

Contextual Info: Silicon Planar Medium Power Transistors NPN 2N6731 PNP 2N 6732 FEATURES • High V CEratings: V CE0 = 8 0 V m in • Exceptional p o w e r dissip a tio n capabilities - 2 W @ T case = 2 5 °C - 1 W Tr - 2 5 » C • Low sa tu ra tio n voltages DESCRIPTION

cb 10 b 60 kd

Abstract: 2N4126
Contextual Info: TOSHIBA 2N4126 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo -50nA Max. @ Vqb _ -20V - I^bo = -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VQE(satj = -0.4V (Max.) @ lc = -50mA, lB = -5mA

BF 422

Contextual Info: SIEMENS NPN Silicon Transistors With High Reverse Voltage BF 420 BF 422 • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 421, BF 423 PNP Type Marking BF 420 B F 422 Ordering Code Pin Co nfigural ion

fzt591

Abstract: FZT491A FZT591A
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES L o w e q u iv a le n t on resistance RCE sat = 350m PART M ARKING DETAIL - FZT591A C O M PLEM ENTAR Y TYPE - FZT491A at 1A ABSOLUTE M A X IM U M RATINGS. PARAMETER

YTS2222

Contextual Info: TOSHIBA YTS2907 Transistor Unit in mm Silicon PNP Epitaxial Type For High-Speed Switching Use DC to VHF Amplifier Applications and Complementry Circuitry Features • High DC Current Gain Specified - 0.1 - -500mA • High Transition Frequency - @ lc = -50mA, fT = 200MHz Min.

lb220

Contextual Info: SM-8 DUAL PNP MEDIUM POWER TRANSISTORS ZDT758 ISSUE 1 - NOVEMBER 1995 c-i CXT fin Ci EZEI [ = □ El c2 H U ZO b2 C jfT ¡T O e2 b, 1 SM-8 !8 LEAD SOT223 PARTMARKING DETAIL - T758 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL C o lle cto r-B a se V o lta g e