KD 248 Search Results

ce04w

Abstract: CE04W-KD ceo4w CE04W1C471 CE04W1A221 CE04W-1A CE04W1C470MD CE04W1C331MD 0J101 Chemi-Con CE04W
Contextual Info: [S 3 UNITED CHEMI-CON S U B S I D I A R I E S Of - N I P P O N ALU M IN U M ELEC TRO LYTIC CAPACITORS CE04W-KD/ MD SERIES C H E M I - C O N . I N C CE04W-KD, MD SERIES M arcon C E 0 4 W -K D , M D Series Capacitors are low-leakage current and closer capacitance tolerance, which are developed

Contextual Info: IL55B Photodarlington Optocoupler FEATURES • H igh C o lle c to r-E m itte r B re a kd o w n Voltage, 80 V m in im u m • H igh Is o la tio n R esistan ce, 1011 W T y p ic a l D im ensions In Inches mm [31 • S ta n d a rd P la s tic DIP Package t .248 (6.30)

2T31

Contextual Info: r - 3 3 - Z ^ f P ow er Transistors BUX37 HARRI S File N um ber SEMI COND SECTOR S7E D B M3 Q2 2 7 1 QQE0 2 5 4 M »HAS 15-Ampere N-P-N Monolithic Darlington Power Transistor TERMINAL DESIGNATIONS 400 V , 35 W Gain of 20 at 15A F ea tu res: • H ig h vo ltag e b re a kd o w n

604 o

Abstract: H-17 H-18 H-19 SM08D43 SM08G43
Contextual Info: - 143 — * • SM 08D 43 • 0. 8A n = 25“C \- ij i f X ' i h .iE, 0 7 7 X f 7 7 • -t — iíl!. K ffj ’/ lili SM08D43 Vdsm Vi) KM 200 Ir tuMs» 0.8 ( Tc=65°C) // S.VI 6/6.6 (50Hz/60Hz. /2-í P<;m 0.5 15: 1.5 Vgt Kd =12V II 1.5 fi/.=20Q III 1.5

SM10G14

Abstract: SM10D14 SM12J41 H-17 H-18 SM12D41 SM12G41
Contextual Info: 148 - - S M I O r D, o t TT-9 G . 14 > '1.Æ IOA H m S îfà W iÉ liÜ I d rm V tm ie ^ SM10D14 SM10G14 200 4Ö0 # VbSM ViiftM 10 /T RMS ( p-l 24.5 P gm 5 Fòt AVI /cm I tm = Vgt Kd=12V h R l = 2Q£1 ¡Ü I gt W 12 V V gd 2.5 A Ih A/¿is dv/dt °C di'/dUo

Contextual Info: IL255 SINGLE CHANNEL Bidirectional Input Optocoupler FEATURES P ackage D im ensions in Inches mm • AC or Polarity Insensitive Inputs [gl g ì f î i • Continuous Forw ard Current, 130 mA ! 248 (6.30 256 ^6.50) • Applications— Telecom m unications

Contextual Info: MCA230/231/255 Photodarlington Optocoupler FEATURES • CTR Minimum MCA230/255, 100% M CA 231,2 0 0 % • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF D im e n sio n s in in ch e s m m [3i [2i rîi 248 (6.30) 256 (6.50) ~5~| Collector

Contextual Info: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at Ip = 1.0 mA H11 B1, 500% H11 B2, 200% H 1 1 B 3 ,100% • Isolation Test Voltage, 5300 V RMS D im ensions in inches mm pin one ID lai 121 Î .248 (6.30) .256 (6.50) • Coupling Capacitance, 0.5 pF

2N929

Abstract: transistor 2N929 2N2484 2N930 MMCF2484 MMCF929 MMCF930
Contextual Info: MMCF929, MMCF930 SILICON MMCF2484 FLIP-CHIP NPN SMALL-SIGNAL AM PLIFIER TRANSISTORS F lip -C h ip - NPN silicon A n n u la r transistor fa m ily fo r low-level a m p lifie r a pplications sim ila r to the 2 N 929, 2 N 9 3 0 and 2 N 2484. Prim ary Electrical Features:

Si 122D

Abstract: ELE Panasonic MARKING 330D LQ Panasonic 181-D Panasonic coils Panasonic Choke Coil
Contextual Info: Panasonic Peaking Coils Peaking Coils Series: Type: Japan Radial S, L, K Type S 3.5 mm Pich • Features • Com pact size, with high Q and self­ resonant frequency • Wide inductance range: 0 .2 2 pH to 22 mH 5 mm Pich Taped Type L Type K ■ Recommended Applications

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

crimper CT 3508

Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Contextual Info: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.

MCP602SN

Abstract: CW 7812 pid controller source code c irf7389 application IRF7389 AN964 PID control dsPIC dc motor speed control PID controller equation potentiometer center tap kd 502 datasheet
Contextual Info: AN964 Software PID Control of an Inverted Pendulum Using the PIC16F684 Author: John Charais Ruan Lourens Microchip Technology Inc. INTRODUCTION The purpose of this application note is to describe how a PIC16F684 can be used to implement a positional Proportional-Integral-Derivative PID feedback control

MC34182D

Abstract: IC CD 4030 pin configuration MC34182 equivalent e51 network ic diagram vco with opamp
Contextual Info: MC10E197 5V ECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future state-of-the-art hard disk designs.

MC34182D

Abstract: E197 MC10E197 MC10E197FN MC10E197FNR2 mc34182
Contextual Info: MC10E197 5VĄECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future state-of-the-art hard disk designs.

phase lock loop 565

Abstract: MC34182D E197 MC10E197 MC10E197FN MC10E197FNR2 detector circuit using OP-AMP
Contextual Info: MC10E197 5VĄECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future state-of-the-art hard disk designs.

KD 334

Abstract: HB 273 jc fh KD 472 M KC 508 kc 1206
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

IC CD 4030 pin configuration

Abstract: MC34182D E197 MC10E197 MC10E197FN MC10E197FNR2 root locus applications
Contextual Info: MC10E197 5V ECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future state-of-the-art hard disk designs.

Contextual Info: MC10E197 5V ECL Data Separator The MC10E197 is an integrated data separator designed for use in high speed hard disk drive applications. With data rate capabilities of up to 50 Mb/s the device is ideally suited for today’s and future state-of-the-art hard disk designs.

DH 822

Abstract: M335K s 1206 DH KD 334 m824k KM393
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

Capacitor KC

Abstract: kc 472 EIA481-1 KD 472 M CC 0201 K R X5R KB 222 capacitor KC 508
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

KD 334

Abstract: C0402 CC 0201 K R X5R KC 508 KEMET C0402 CC 0201 K R fd 223 fd 35 k EF 183 C0805C103K5RAC
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

2225 X7R 335

Abstract: m270000
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

Contextual Info: SGS-THOMSON RülD@œi[LI BTIs! IS!inCi BCP51/52/53 MEDIUM POWER AMPLIFIER . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL