K72 MOSFET Search Results

mosfet k72

Abstract: k72 diode K72 marking diode k72 mosfet I-S115 marking K72
Contextual Info: 2N7002W Mosfet N-Channel SOT-323 1. GATE 2. SOURCE 3. DRAIN Features — High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability — — — Marking: K72 Dimensions in inches and (millimeters)

k72 transistor

Abstract: transistor k72 mosfet k72 transistor marking k72 k72 device marking k72 diode k72 transistor surface mount k72 marking transistor k72 transistor sot 23 k72 marking code
Contextual Info: SPICE MODELS: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

k72 transistor

Abstract: k72 transistor surface mount mosfet k72 transistor k72 transistor marking k72 k72 marking k72 device marking k72 mosfet marking k72 K72 n
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package

Contextual Info: 2N7002DW SPICE MODEL: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

k72 transistor

Abstract: transistor k72 transistor marking k72 mosfet k72 k72 transistor surface mount diagram 94v-0 Marking Code k72 K72 TO k72 mosfet k72 device marking
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package

k72 diode

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C • Dual N-Channel MOSFET • Low On-Resistance 60V 7.5Ω @ VGS = 5V 0.23A • Low Gate Threshold Voltage • Low Input Capacitance Description

k72 transistor

Abstract: transistor k72 mosfet k72 transistor marking k72 k72 sot 23 k72 transistor surface mount k72 diode k72 transistor sot 23 k72 marking code 2N7002DW
Contextual Info: SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed S2

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

k72 transistor

Abstract: transistor k72 transistor marking k72 k72 device marking k72 diode Dual N-Channel mosfet sot-363 marking code tc sot 363 marking k72 mosfet k72 2N7002DW
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

k72 transistor

Abstract: k72 transistor surface mount 2N7002DW 2N7002DW-7-F
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

DS30120 Rev. 13

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

diode K72

Abstract: K72 marking diode k72 diode
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Description This MOSFET has been designed to minimize the on-state resistance

mosfet k72

Abstract: k72 SOT-363 k72 transistor "DS30120 Rev. 10"
Contextual Info: SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · · Low On-Resistance G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed S2 G2 Low Input/Output Leakage D1

k72 transistor

Abstract: K72 TO mosfet k72 k72 mosfet code k72 k72 marking k72 transistor surface mount K72 n marking K72
Contextual Info: SPICE MODEL: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • Low On-Resistance • • • • • • • G1 D2 S1 Low Gate Threshold Voltage B C Low Input Capacitance Fast Switching Speed

k72 transistor

Abstract: transistor k72 k72 diode mosfet k72 MAX21000 2N7002DW marking K72 ID200
Contextual Info: 2N7002DW 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

marking k72

Abstract: k72 td transistor k72 mosfet k72 k72 transistor k72 diode 2N7002W
Contextual Info: 2N7002W 2N7002W MOSFET ＳＯＴ－３２３ N-Channel 1.GATE 2. SOURCE FEATURES 3. DRAIN １．２５±０．０５ １．０１ ＲＥＦ Power dissipation PD : 0.2 W（Tamb=25℃） Collector current ID: 115 mA Collector-base voltage VDS: 60 V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET ＳＯＴ－３２３ N-Channel 1.GATE 2. SOURCE FEATURES 3. DRAIN １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 0.2 W（Tamb=25℃）

k72 transistor

Abstract: marking K72 transistor k72 mosfet k72 k72 td k72 diode 2N7002W
Contextual Info: SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET ＳＯＴ－３２３ N-Channel 1.GATE 2. SOURCE FEATURES 3. DRAIN １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 0.2 W（Tamb=25℃） Collector current ID: 115 mA

k72 transistor

Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range

K72 TO

Abstract: transistor k72 k72 transistor 2N7002DW ID200
Contextual Info: Transys Electronics L I M I T E D SOT-363 Plastic-Encapsulated Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range