K72 MOSFET Search Results

k72 transistor

Abstract: transistor k72 mosfet k72 transistor marking k72 k72 device marking k72 diode k72 transistor surface mount k72 marking transistor k72 transistor sot 23 k72 marking code
Contextual Info: SPICE MODELS: 2N7002DW 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · SOT-363 A Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

k72 sot-23

Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
Contextual Info: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS

DS30120 Rev. 13

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

k72 diode

Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

k72 transistor

Abstract: marking K72 transistor k72 mosfet k72 k72 td k72 diode 2N7002W
Contextual Info: SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET ＳＯＴ－３２３ N-Channel 1.GATE 2. SOURCE FEATURES 3. DRAIN １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 0.2 W（Tamb=25℃） Collector current ID: 115 mA

k72 transistor

Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range

2N7002T

Abstract: transistor k72 SC-75
Contextual Info: 2N7002T N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1. GATE 2. SOURCE 1 2 3. DRAIN SOT-523(SC-75) FEATURES: * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories

k72 transistor

Abstract: transistor k72 k72 diode 2N7002W k72 td marking K72
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 1. GATE FEATURES 2. SOURCE 1. 25¡ À0. 05 3. DRAIN 1. 01 REF Power dissipation PD : 0.2 W (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

k72 diode

Abstract: K72 TO K72 marking diode mosfet k72 marking k72 k72 transistor transistor k72 2N7002W marking td sot323
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Marking Code k72

Abstract: code k72 k72 diode K72 marking diode LT2N7002D
Contextual Info: LT2N7002D N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002D is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

2N7002T

Abstract: MosFET
Contextual Info: 2N7002T 0.115A , 60V , RDS ON 7.2Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES     High density cell design for low RDS(ON). Voltage controlled small signal switch.

Marking Code k72

Abstract: k72 diode K72 marking diode K72 MARKING SOT-23
Contextual Info: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density, DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET N-Channel SOT-323 3 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

mosfet k72

Abstract: Marking Code k72 k72 diode LT2N7002E k72 sot 23 code k72 N-channel Power MOSFET
Contextual Info: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density, DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

Contextual Info: 2N7002W N-Channel MOSFET 3 DRAIN 3 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Output Capacitance : 11PF *Low Threshold Voltage :1 .5V TYE *Fast Switching Speed : 7ns 1 1 GATE 2 SOT-323(SC-70) 2 SOURCE Maximum Ratings (TA=25 C Unless Otherwise Specified)

k72 transistor

Abstract: k72 device marking 22PF 2N7002W
Contextual Info: 2N7002W N-Channel MOSFET 3 DRAIN 3 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Output Capacitance : 11PF *Low Threshold Voltage :1 .5V TYE *Fast Switching Speed : 7ns 1 1 GATE 2 SOT-323(SC-70) 2 SOURCE Maximum Ratings (TA=25 C Unless Otherwise Specified)

2P1 transistor

Contextual Info: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: 2N7002W N-Channel MOSFET 3 DRAIN * “G” Lead Pb -Free 3 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Output Capacitance : 11PF *Low Threshold Voltage :1 .5V(TYE) *Fast Switching Speed : 7ns 1 1 GATE 2 SOT-323(SC-70) 2 SOURCE

marking K72

Abstract: 2N7002DW
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002DW Features • • • • • • Power Dissipation: 0.2W Tamb=25℃ Drain Current: 115mA Drain-source Voltage: 60V