K582 Search Results
K582 Price and Stock
KEMET Corporation MMK5823M63J01L4BULKCAP FILM 0.082UF 20% 63VDC RAD |
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MMK5823M63J01L4BULK | Box | 9,430 | 1 |
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MMK5823M63J01L4BULK | 3,158 |
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MMK5823M63J01L4BULK | Bulk | 2,000 |
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KEMET Corporation MMK5822J50J01L4BULKCAP FILM 8200PF 5% 50VDC RADIAL |
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MMK5822J50J01L4BULK | Box | 6,209 | 1 |
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MMK5822J50J01L4BULK | 3,189 |
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MMK5822J50J01L4BULK | Bulk | 6,000 |
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C&K Switches PTS645VK58-2-LFSSWITCH TACTILE SPST-NO 0.05A 12V |
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PTS645VK58-2-LFS | Bulk | 4,712 | 1 |
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KEMET Corporation MMK5824K63J04L4BULKCAP FILM 0.82UF 10% 63VDC RADIAL |
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MMK5824K63J04L4BULK | Box | 2,235 | 1 |
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MMK5824K63J04L4BULK | 2,386 |
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MMK5824K63J04L4BULK | 36 Weeks | 3,000 |
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KEMET Corporation MMK5823J50J01L16.5TR18CAP FILM 0.082UF 5% 50VDC RADIAL |
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MMK5823J50J01L16.5TR18 | Cut Tape | 2,201 | 1 |
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MMK5823J50J01L16.5TR18 | 7,397 |
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MMK5823J50J01L16.5TR18 | Reel | 2,500 |
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K582 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CAT. No. K582-1 高調波電流規制対応ワイド入力 業界トップクラスの小型高密度実装 単出力 基板タイプ AC/DC スイッチング電源 HSB シリーズ ソフトスイッチング技術により 業界最高峰の変換効率 |
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K582-1 HSB200-24ï | |
Contextual Info: SONY K58257P/SP/M 32768-word X 8 bit High Speed CMOS Static RAM P ackage O u tlin e D e scrip tio n Unit: mm K58257P/SP/M is a 2 6 2 ,1 4 4 bits high speed CMOS static RAM organized as 3 2 ,7 6 8 words by 8 bits and operates from a single 5V supply. This |
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CXK58257P/SP/M 32768-word CXK58257P/SP/M CXK58257P/SP/Mâ 100ns 120ns CXK58257P/SP/M-70LU | |
CXK58258Contextual Info: K58258AP/AJ SONY - 15/20/25 32,768-word X 8-bit High Speed C M O S Static RAM Description The C X K 5 8 2 5 8 A P /A J is a high speed CMOS sta tic RAM w h ich con sists o f 32,768-w ord x 8-bit. It operates a t 1 5 / 2 0 / 2 5 n s access tim e fro m 5V single pow er supply. |
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CXK58258AP/AJ 768-word 768-w CXK58258AP 236x1024 K58258AP 28pin 300mil CXK58258 | |
Contextual Info: SONY K58257ATM/AYM -12LB 32768-word x 8-bit High Speed CM OS Static RAM D escription K58257ATM/AYM is a 256K bits, 32768 words by 8 bits, CMOS static RAM. Operating on a single 2.7 to 5.5V supply. It is suitable for portable and battery back-up systems which require extremely small package and low |
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CXK58257ATM/AYM -12LB 32768-word K58257ATM CXK58257AYM CXK58257ATM: CXK58257AYM: 240ns 120ns | |
transistor m1104
Abstract: transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182
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filt05 transistor m1104 transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182 | |
Siecor 62.5
Abstract: SIECOR Fiber patch panel k514 C8831 Corning Infinicor 300 ofnp ZA-2385 ZA-1457 K5141 K3116 c9131
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CAPSS1721 12-Fiber CCA30 EVO-29-EN Siecor 62.5 SIECOR Fiber patch panel k514 C8831 Corning Infinicor 300 ofnp ZA-2385 ZA-1457 K5141 K3116 c9131 | |
transistor k2333
Abstract: k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392
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KKE0272-V 30-K5273-K01 -K5333-K01 -K5393-K01 -K5473-K01 B37931-K0472-K01 C/C25 transistor k2333 k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392 | |
K582-100A
Abstract: K582
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BUK582-1 OT223 K582-100A K582 | |
Contextual Info: SONY» 7o l / 8 5 L7i o l v i 2L C X K 5 8 2 6 7 A T M /A Y M 32768-word x 8-bit High Speed CMOS Static RAM D e s c rip tio n C X K 5 8 2 6 7 A T M /A Y M is a 2 5 6 K b its , 3 2 7 6 8 w o rd s by 8 b its , CMOS s ta tic R AM . It is su ita b le fo r p o rta b le and b a tte ry back-up syste m s w h ic h |
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32768-word K58267ATM XK58267AY CXK58267ATM 8267A | |
Contextual Info: SONY» K58257ATM/AYM -7 0 U J 8 5 L L /1 0 L L /1 2 L L 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A T M /A Y M is a 256K bits, 32 ,768 w o rds by 8 bits, CMOS sta tic RAM. It is suitable fo r portable and battery back-up system s w h ich require extremely small package |
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CXK58257ATM/AYM 32768-word CXK58257ATM 8257A CXK58257ATM XK58257AYM | |
A42 B331
Abstract: 96182 eaton eaton 96182 MS27903-1 ms90311 mil-s-8834 NEC k719 ms24547-1 MS25237 nec k591
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TF300-5 A42 B331 96182 eaton eaton 96182 MS27903-1 ms90311 mil-s-8834 NEC k719 ms24547-1 MS25237 nec k591 | |
omron a3bt
Abstract: omron a3bt selector IA3G k511 A3GJ-K511-G A3BT-500W A3GT-500D A3G-4024 s552 A3Gt
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k1060
Abstract: transistor k1271 transistor k2182 k1120 K1060 data sheet transistor k1101 transistor k1821 k2182 k2050 transistor k1102
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KKE0272-V B37871-K5102-J01 C/C25 k1060 transistor k1271 transistor k2182 k1120 K1060 data sheet transistor k1101 transistor k1821 k2182 k2050 transistor k1102 | |
k060Contextual Info: Multilayer Chip Capacitors X8R Features • ■ ■ ■ ■ High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength Wide temperature rangeup to 150°C Applications ■ ■ ■ ■ Blocking Coupling Decoupling |
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55Blister k060 | |
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Contextual Info: SONY. K58257AP/ASP/AM -70LU85LU10LL/12LL 32768-word X 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w ords by 8 bits and operates from a single 5V supply. T his device is suitable fo r use in high |
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CXK58257AP/ASP/AM -70LU85LU10LL/12LL 32768-word 100ns 120ns 8257A XK58257AP CXK58257ASP 28pin OIP028-P-0300-A | |
Contextual Info: OL/12L SONY. K58267ATM/AYM -70LV85L/1 -70LL/85LL71OLL/12LL 32768-word X 8-bit High Speed C M O S Static RAM D escription C X K 582 67A T M /A Y M is a 256K bits, 32768 words by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up systems which |
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CXK58267ATM/AYM -70LV85L/1 OL/12L -70LL/85LL71OLL/12LL 32768-word CXK58267ATM CXK58267AYM CXK58267ATM | |
D501
Abstract: B37741 k1060 smd tabellen Siemens Matsua Components Bestellnummern-Verzeichnis K0682 d5050 nf schaltungen NDKM B37872
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Contextual Info: 仕様規格表 仕 様 入力 品 名 項 目 Item Rated Input Voltage 定格入力電圧 Input Voltage Range 入力電圧範囲 入力電流(Vin=100VAC/200VAC) Input AC Current Input Frequency Range 入力周波数 力率*1 typ.(Vin=100VAC/200VAC) Power Factor |
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100VAC/200VACï HSB200 150MHzï K582-1ï 60kHz 220kHz | |
kerko 1210
Abstract: k568 kerko 68 pf kerko K1272 k5102k01 K1124 k0122
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C/C25 kerko 1210 k568 kerko 68 pf kerko K1272 k5102k01 K1124 k0122 | |
D5392Contextual Info: Leaded Capacitors, EIA Standard X7R Features • • • • High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength Applications • • • • Blocking Coupling Decoupling Interference suppression Terminals |
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fl235tjQ5 B37987B37981- B37981- B37987- B37984-K5684-K51 -K5824-K51 -K5105-K51 fl235b05 D5392 | |
Contextual Info: Standard Chip Capacitors X7R/2R1 Features • High volumetric efficiency • Non-linear capacitance change • High insulation resistance • High pulse strength A pplications • Blocking • Coupling • Decoupling • Interference suppression Dim ensions mm |
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-K5473-K01 fi23SbOS DP75167 AC/C25 s235bQ5 | |
28P-1Contextual Info: SONY C X K 5 8 2 5 7 A T M /A Y M o^ 5lx/ olx/ 2lx -70LLX/85LLX/1OLLX/12LLX 32768-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 825 7A T M /A Y M is a 25 6K bits, 32 ,7 6 8 words by 8 bits, C M O S static RAM. It is suitable for portable and battery back-up systems |
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CXK58257ATM/AYM -70LLX/85LLX/1OLLX/12LLX 32768-word CXK58257ATM: CXK58257AYM: CXK582 CXK58257ATK/I/AYM CXK58257ATM 28pin 28P-1 | |
k7020
Abstract: K2920 K652 k3216 MS27781-31M K2916 K4516 K47-20 K50-16 K2520
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-S-3950 -C-39029/1-101 MIL-S-3950 TF300-5B k7020 K2920 K652 k3216 MS27781-31M K2916 K4516 K47-20 K50-16 K2520 | |
MS27903-1
Abstract: AN3223-1 8895K1 K3320 MS18152-1 K47-20 WC150PB6 K2520 K8016 8869K67
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AN3221-1 AN3223-1 AN3230-1 E1663-1 M3950/14A21 M3950/14C24 M5423/16-01 M8805/2 M8805/55-001 M8805/93-001 MS27903-1 AN3223-1 8895K1 K3320 MS18152-1 K47-20 WC150PB6 K2520 K8016 8869K67 |