K4S643232 Search Results

K4S643232F

Contextual Info: K4S643232F CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 January 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jan. 2002 K4S643232F CMOS SDRAM Revision History

Contextual Info: K4S643232E-TE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 3.3V Extended Temperature 86-TSOP Revision 1.4 December 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 (Dec. 2001)

K4S643232H-UC

Abstract: K4S643232H samsung k4s643232h tc70 K4S643232HU
Contextual Info: K4S643232H SDRAM 2M x 32 SDRAM 86 TSOP-II with Pb-Free RoHS compliant Revision 1.2 April 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

K4S643232C

Abstract: K4S643232
Contextual Info: K4S643232C CMOS SDRAM 512K x 32Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the

K4S643232F-TI/p

Abstract: K4S643232F
Contextual Info: K4S643232F-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 3.3V Industrial Temperature 86-TSOP Revision 1.0 January 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 (Jan. 2002)

K4S643232E

Contextual Info: K4S643232E-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.2 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.2 Oct. 2001 K4S643232E-TI/P

Contextual Info: K4S643232E-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 January 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jan. 2001 K4S643232E-TI/P

Contextual Info: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 October 2000 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Oct. 2000 K4S643232E CMOS SDRAM Revision History

K4S643232C

Contextual Info: K4S643232C CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 November 1999 Samsung Electronics reserves the right to change products or specification without notice. -1- REV. 1.1 Nov. '99 K4S643232C CMOS SDRAM Revision History

K4S643232E

Contextual Info: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 Oct. 2001 K4S643232E CMOS SDRAM Revision History

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

k4s643232f

Abstract: KS RMII Reduced MII aa2c "routing tables"
Contextual Info: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks

TCXO A31 10MHZ

Abstract: MT48LC4M32B2TG-6 L1V16 Datum OCXO
Contextual Info: PRELIMINARY PRODUCT BRIEF: SUBJECT TO CHANGE Rev: 091407 DS34S108, DS34S104, DS34S102, DS34S101 Description Abridged General Description Features The IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC draft-compliant DS34S108 allows up to eight T1/E1 links or frame-based serial HDLC links to be

pic microcontroller family ptf

Abstract: epoch stepper motor motorola bts hm1 MPC8260 MSC8101 SC100 SC140 Samsung t-dmb module samsung t-dmb soc 8Mb samsung SDRAM
Contextual Info: MSC8101 USER’S GUIDE 16-Bit Digital Signal Processor MSC8101UG/D Revision 1, June 2001 EOnCE is a registered trademark of Motorola, Inc. StarCore, PowerQUICC II, Motorola, and the Motorola logo are trademarks of Motorola, Inc. The PowerPC name is a trademark of International Business Machines Corporation used by Motorola under license

diode db3 c248

Abstract: CPPLC7LTBR EPM3128ATC100-10 IC LM317 8pin siemens ferrite n22 p14 zener DB3 C209 K4S643232-TC60 MURATA BLM18ag121 HALO N5 C242-C244
Contextual Info: Freescale Semiconductor, Inc. User’s Manual Freescale Semiconductor, Inc. MPC852TADSRM/D Version 1.0 June 1, 2003 MPC852TADS User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

Contextual Info: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial

K4S643232H

Contextual Info: SDRAM 64Mb H-die x32 CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 November 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 November. 2003 SDRAM 64Mb H-die (x32)

K4S643232H

Abstract: K4S643232
Contextual Info: SDRAM 64Mb H-die x32 CMOS SDRAM 64Mb H-die (x32) SDRAM Specification Revision 1.3 February 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 February. 2004 SDRAM 64Mb H-die (x32) CMOS SDRAM Revision History

TXC-06010-MB

Abstract: TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk
Contextual Info:  PacketTrunk-4 Plus Device TDMoIP/MPLS Gateway Device TXC-06010 DATA SHEET PRODUCT PREVIEW TXC-06010-MB, Ed. 2 June 2006 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII; HDX or

Contextual Info: SDRAM 64Mb H-die x32 CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.2 December 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.2 December. 2003 SDRAM 64Mb H-die (x32)

Contextual Info: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial

Contextual Info: K4S643233E-SE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 3.0V & 3.3V Extended Temperature 90-Ball FBGA Revision 1.5 April 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.5 April 2002

Contextual Info: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3/STS-1 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks