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    K4A5 Search Results

    K4A5 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    K4A5
    Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 120.2KB 1
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    K4A5 Price and Stock

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    Toshiba America Electronic Components TK4A50D(STA4,Q,M)

    MOSFET N-CH 500V 4A TO220SIS
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    DigiKey TK4A50D(STA4,Q,M) Tube 55 1
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    Mouser Electronics TK4A50D(STA4,Q,M) 405
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    TE Connectivity GA10K4A59

    DISC-DISCRETE
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    TE Connectivity GA10K4A519I

    DISC-10K AT 25C +/-0.05 32-44C
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    DigiKey GA10K4A519I Bulk 1,000
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    Mouser Electronics GA10K4A519I 404
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    Richardson RFPD GA10K4A519I 1,000
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    Toshiba America Electronic Components TK4A55D(STA4,Q,M)

    MOSFET N-CH 550V 4A TO220SIS
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    Mouser Electronics TK4A55D(STA4,Q,M)
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    Toshiba America Electronic Components TK4A53D(STA4,Q,M)

    MOSFET N-CH 525V 4A TO220SIS
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    Mouser Electronics TK4A53D(STA4,Q,M) 300
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    K4A5 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TK4A55DA

    Contextual Info: K4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


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    TK4A55DA TK4A55DA PDF

    K*A50D

    Abstract: TK4A50D
    Contextual Info: K4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


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    TK4A50D K*A50D TK4A50D PDF

    Contextual Info: K4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 525 V)


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    TK4A53D PDF

    TK4A55D

    Contextual Info: K4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V)


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    TK4A55D TK4A55D PDF

    TK4A55D

    Contextual Info: K4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V)


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    TK4A55D TK4A55D PDF

    Contextual Info: K4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


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    TK4A50D PDF

    TK4A55DA

    Abstract: Hints
    Contextual Info: K4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


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    TK4A55DA TK4A55DA Hints PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    MA1002 digital LED Clock Module

    Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
    Contextual Info: D ID I-K E Y l r C O R P TOLL FREE W ATS LINE O R A T I O N Telephone Order Entry Now Available Until 7:00 P.M. Central Time I 1- 800- 344-4539 91 E A S Y TO R E M E M B E R : 1-800-DIGI-KEY A K , HI: 218-681 66741 Catalog No. 851 1Jan.-Fab., 11 HIGHWAY 32 SOUTH


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    1-800-DIGI-KEY 1-800-DIGI-KEY) MA1002 digital LED Clock Module MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800 PDF

    Contextual Info: K4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


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    TK4A50D PDF

    Contextual Info: K4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V)


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    TK4A55D PDF

    TK4A55D

    Contextual Info: K4A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A55D ○ スイッチングレギュレータ用 単位: mm Ф3.2 ± 0.2 2.7 ± 0.2 10 ± 0.3 A 3.9 3.0 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.0 S (標準)


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    TK4A55D TK4A55D PDF

    K*A50D

    Abstract: TK4A50D K4A5
    Contextual Info: K4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


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    TK4A50D K*A50D TK4A50D K4A5 PDF

    K4A50D

    Abstract: TK4A50D
    Contextual Info: K4A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A50D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 1.5 S (標準)


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    TK4A50D SC-67 2-10U1B K4A50D TK4A50D PDF

    Contextual Info: K4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


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    TK4A53D PDF

    2-10U1B

    Contextual Info: K4A53D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K4A53D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 1.3 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.0 S (標準)


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    TK4A53D SC-67 2-10U1B VDD400 00A/s K4A53D 2002/95/EC) 2-10U1B PDF

    TK4A50D

    Abstract: K4A50D
    Contextual Info: K4A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A50D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 1.5 S (標準)


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    TK4A50D SC-67 2-10U1B ch-001 TK4A50D K4A50D PDF

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d PDF

    TK4A55DA

    Contextual Info: K4A55DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A55DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) z 漏れ電流が低い。


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    TK4A55DA TK4A55DA PDF

    TK4A55DA

    Contextual Info: K4A55DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A55DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 1.8 S (標準)


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    TK4A55DA TK4A55DA PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


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    P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor PDF

    Contextual Info: K4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


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    TK4A53D PDF

    Contextual Info: K4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


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    TK4A55DA PDF

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


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    Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor PDF