K4A5 Search Results
K4A5 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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K4A5 | Unknown | Shortform Semicon, Diode, and SCR Datasheets | Short Form | 120.2KB | 1 |
K4A5 Price and Stock
Toshiba America Electronic Components TK4A50D(STA4,Q,M)MOSFET N-CH 500V 4A TO220SIS |
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TK4A50D(STA4,Q,M) | Tube | 55 | 1 |
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TK4A50D(STA4,Q,M) | Tube | 16 Weeks | 50 |
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TK4A50D(STA4,Q,M) | 405 |
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TK4A50D(STA4,Q,M) | 19 Weeks | 50 |
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TE Connectivity GA10K4A59DISC-DISCRETE |
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GA10K4A59 | Bulk | 1 |
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GA10K4A59 | Bag | 1 |
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GA10K4A59 |
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GA10K4A59 | 1 |
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TE Connectivity GA10K4A519IDISC-10K AT 25C +/-0.05 32-44C |
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GA10K4A519I | Bulk | 1,000 |
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GA10K4A519I | Bag | 8 Weeks | 1,000 |
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GA10K4A519I | 404 |
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GA10K4A519I | 1,000 |
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GA10K4A519I | 10 Weeks | 1,000 |
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GA10K4A519I |
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GA10K4A519I | 500 |
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Toshiba America Electronic Components TK4A55D(STA4,Q,M)MOSFET N-CH 550V 4A TO220SIS |
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TK4A55D(STA4,Q,M) | Tube |
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TK4A55D(STA4,Q,M) | Tube | 50 |
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TK4A55D(STA4,Q,M) |
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Toshiba America Electronic Components TK4A53D(STA4,Q,M)MOSFET N-CH 525V 4A TO220SIS |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK4A53D(STA4,Q,M) | Tube |
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TK4A53D(STA4,Q,M) | Tube | 50 |
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TK4A53D(STA4,Q,M) | 300 |
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K4A5 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TK4A55DAContextual Info: K4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK4A55DA TK4A55DA | |
K*A50D
Abstract: TK4A50D
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TK4A50D K*A50D TK4A50D | |
Contextual Info: K4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 525 V) |
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TK4A53D | |
TK4A55DContextual Info: K4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V) |
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TK4A55D TK4A55D | |
TK4A55DContextual Info: K4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V) |
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TK4A55D TK4A55D | |
Contextual Info: K4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) |
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TK4A50D | |
TK4A55DA
Abstract: Hints
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TK4A55DA TK4A55DA Hints | |
Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
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25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 | |
MA1002 digital LED Clock Module
Abstract: MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800
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1-800-DIGI-KEY 1-800-DIGI-KEY) MA1002 digital LED Clock Module MA1002 Robinson Nugent CATALOG NSB7881 equivalent transistor P347 t110 94v 0 MEPCO 5043 LN543RA m7104 Lm13800 | |
Contextual Info: K4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) |
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TK4A50D | |
Contextual Info: K4A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A55D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.5 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.0 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 550 V) |
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TK4A55D | |
TK4A55DContextual Info: K4A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A55D ○ スイッチングレギュレータ用 単位: mm Ф3.2 ± 0.2 2.7 ± 0.2 10 ± 0.3 A 3.9 3.0 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.0 S (標準) |
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TK4A55D TK4A55D | |
K*A50D
Abstract: TK4A50D K4A5
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TK4A50D K*A50D TK4A50D K4A5 | |
K4A50D
Abstract: TK4A50D
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TK4A50D SC-67 2-10U1B K4A50D TK4A50D | |
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Contextual Info: K4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) |
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TK4A53D | |
2-10U1BContextual Info: K4A53D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ K4A53D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 1.3 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 3.0 S (標準) |
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TK4A53D SC-67 2-10U1B VDD400 00A/s K4A53D 2002/95/EC) 2-10U1B | |
TK4A50D
Abstract: K4A50D
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TK4A50D SC-67 2-10U1B ch-001 TK4A50D K4A50D | |
T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
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OCR Scan |
10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d | |
TK4A55DAContextual Info: K4A55DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A55DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) 10 ± 0.3 Ф3.2 ± 0.2 : IDSS = 10 A (最大) z 漏れ電流が低い。 |
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TK4A55DA TK4A55DA | |
TK4A55DAContextual Info: K4A55DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K4A55DA ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 2.0 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 1.8 S (標準) |
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TK4A55DA TK4A55DA | |
220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
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P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor | |
Contextual Info: K4A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω(typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) |
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TK4A53D | |
Contextual Info: K4A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) |
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TK4A55DA | |
st178
Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
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Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor |